Provided is a method for manufacturing a medical diagnostic chip using a mixed lithography method. The method includes forming first patterns in a first region using first lithography, and forming second patterns in a second region using second lithography, wherein a part of the second patterns is formed in a part of the first region among the region where the first region and the second region are adjacent to each other.

The present invention provides a method of forming a first layer including a layout of first shot regions each having a first size and a second layer including a layout of second shot regions each having a second size corresponding to a size including at least two first shot regions to be overlaid on each other, by first processing of forming the first layer in a process including scanning exposure and second processing of forming the second layer, the method including determining, for each of the first shot regions, a scanning direction when performing scanning exposure for the first shot region in the first processing so that combinations each including the scanning directions and the at least two first shot regions included in the second shot region in the first processing are identical in at least some of the second shot regions.

The present invention provides a pattern forming method of forming a plurality of pattern layers on a substrate by using a plurality of lithography apparatuses including a first lithography apparatus and a second lithography apparatus, the method comprising a first step of forming a first pattern layer by the first lithography apparatus which adopts a die-by-die alignment method, based on alignment information obtained by using the die-by-die alignment method for a plurality of marks formed on the substrate by a lithography apparatus which adopts a global alignment method, and a second step of forming a second pattern layer so as to overlap with the first pattern layer by the second lithography apparatus, based on alignment information obtained by using the global alignment method for a plurality of shot regions formed on the substrate by the first lithography apparatus in the first step.

A method of forming a pattern on a substrate includes forming a group of first patterns so as to define a first region on each of a plurality of substrates by using a projection exposure apparatus, and forming a group of second patterns so as to define a second region on the first region of each of substrates different from each other out of the plurality of substrates by using a plurality of imprint apparatuses. A plurality of second regions, which are respectively defined by the plurality of imprint apparatuses in the forming the group of second patterns, are different in shape but have a common component. In the forming the group of first patterns, the first regions are deformed in accordance with the common component.

In accordance with an embodiment of the disclosure, a method of patterning can include dividing an image into a set of frame sections; determining a tip pattern for a respective portion of an image to be patterned by each tip of the tip array in each frame section of the set of frame sections; disposing the tip array in a patterning position in a first location of the substrate corresponding to a location of the substrate in which the first frame section in the set of frame sections is to be patterned; projecting a first pattern of radiation onto the tip array to selectively irradiate one or more tips of the tip array and pattern the substrate, wherein the first pattern of radiation corresponds to a tip pattern for the first frame section; disposing the tip array in a patterning position in a second location of the substrate corresponding to a location of the substrate in which the second frame section in the set of frame sections is to be patterned; projecting a second pattern of radiation onto the tip array to selectively irradiate tips of the tip array and pattern the substrate, wherein the second pattern of radiation corresponds to a tip pattern for the second frame section; and repeating the disposing and projecting for each frame section in the set of frame sections to pattern the image.

Techniques herein include processes and systems by which a reproducible CD variation pattern can be mitigated or corrected to yield desirable CDs from microfabrication patterning processes, via resolution enhancement. A repeatable portion of CD variation across a set of wafers is identified, and then a correction exposure pattern is generated. A direct-write projection system exposes this correction pattern on a substrate as a component exposure, augmentation exposure, or partial exposure. A conventional mask-based photolithographic system executes a primary patterning exposure as a second or main component exposure. The two component exposures when combined enhance resolution of the patterning exposure to improve CDs on the substrate being processed without measure each wafer.

A lithography method to pattern a first semiconductor wafer is disclosed. An optical mask is positioned over the first semiconductor wafer. A first region of the first semiconductor wafer is patterned by directing light from a light source through transparent regions of the optical mask. A second region of the first semiconductor wafer is patterned by directing energy from an energy source to the second region, wherein the patterning of the second region comprises direct-beam writing.

Asymmetric structures formed on a substrate and microlithographic methods for forming such structures. Each of the structures has a first side surface and a second side surface, opposite the first side surface. A profile of the first side surface is asymmetric with respect to a profile of the second side surface. The structures on the substrate are useful as a diffraction pattern for an optical device.

A device manufacturing method including: performing a first exposure on a substrate using a first lithographic apparatus to form a first patterned layer including first features; processing the substrate to transfer the first features into the substrate; and performing a second exposure on the substrate using a second lithographic apparatus to form a second patterned layer including second features, wherein: the first lithographic apparatus has first and second control inputs effective to control first and second parameters of the first features at least partly independently; the second lithographic apparatus has a third control input effective to control the first and second parameters of the second features together; and the first exposure is performed with the first and/or second control input set to pre-bias the first and/or second parameter.

Asymmetric structures formed on a substrate and microlithographic methods for forming such structures. Each of the structures has a first side surface and a second side surface, opposite the first side surface. A profile of the first side surface is asymmetric with respect to a profile of the second side surface. The structures on the substrate are useful as a diffraction pattern for an optical device.