The present invention provides a method of forming a first layer including a layout of first shot regions each having a first size and a second layer including a layout of second shot regions each having a second size corresponding to a size including at least two first shot regions to be overlaid on each other, by first processing of forming the first layer in a process including scanning exposure and second processing of forming the second layer, the method including determining, for each of the first shot regions, a scanning direction when performing scanning exposure for the first shot region in the first processing so that combinations each including the scanning directions and the at least two first shot regions included in the second shot region in the first processing are identical in at least some of the second shot regions.

A maskless photolithoghrapic system includes a laser point-by-point scanning exposure unit, a plane-projection exposure unit, a mobile station and a calculation control unit that decomposes a pattern to be exposed, so that a pattern portion with a precision requirement below a pre-determined threshold is exposed by the laser point-by-point scanning exposure unit, and a pattern portion with a precision requirement greater than the pre-determined threshold is exposed by the plane-projection exposure unit; when conducting laser point-by-point scanning exposure on a sample on the mobile station, the light emitted by the laser point-by-point scanning exposure unit moves relative to the sample according to the pattern portion with a precision requirement below the pre-determined threshold; and when conducting plane-projection exposure on the sample, the plane-projection exposure unit emits light with a corresponding pattern shape onto the sample according to the graph with a precision requirement greater than the pre-determined threshold.

The present invention provides a pattern forming method of forming a plurality of pattern layers on a substrate by using a plurality of lithography apparatuses including a first lithography apparatus and a second lithography apparatus, the method comprising a first step of forming a first pattern layer by the first lithography apparatus which adopts a die-by-die alignment method, based on alignment information obtained by using the die-by-die alignment method for a plurality of marks formed on the substrate by a lithography apparatus which adopts a global alignment method, and a second step of forming a second pattern layer so as to overlap with the first pattern layer by the second lithography apparatus, based on alignment information obtained by using the global alignment method for a plurality of shot regions formed on the substrate by the first lithography apparatus in the first step.

In some embodiments, the present disclosure relates a lithographic substrate marking tool. The lithographic substrate marking tool has a first lithographic exposure tool arranged within a shared housing and configured to generate a first type of electromagnetic radiation during a plurality of exposures. A mobile reticle has a plurality of different reticle fields respectively configured to block a portion of the first type of electromagnetic radiation to expose a substrate identification mark within a photosensitive material overlying a semiconductor substrate. A transversal element is configured to move the mobile reticle so that separate ones of the plurality of reticle fields are exposed onto the photosensitive material during separate ones of the plurality of exposures. The mobile reticle therefore allows for different strings of substrate identification marks to be formed within the photoresistive material using a same reticle, thereby economically providing the benefits of lithographic substrate marking.

The present disclosure relates a method of forming substrate identification marks. In some embodiments, the method may be performed by forming a photosensitive material over a substrate. A first type of electromagnetic radiation is selectively provided to the photosensitive material to expose a plurality of substrate identification marks within the photosensitive material, and a second type of electromagnetic radiation is selectively provided to the photosensitive material to expose one or more alignment marks within the photosensitive material. Exposed portions of the photosensitive material are removed to form a patterned photosensitive material. The substrate is etched according to the patterned photosensitive material to form recesses within the substrate that are defined by the plurality of substrate identification marks and the one or more alignment marks.

A microlithographic illumination unit for post-exposure of a photoresist provided on a wafer in a microlithography process, has at least one light source and a light-guiding and light-mixing element for coupling the electromagnetic radiation generated by the light source into the photoresist. This light-guiding and light-mixing element has a first pair of mutually opposite side faces, the maximum spacing of which has a first value. Multiple reflections of the electromagnetic radiation on these side faces take place, wherein the light-guiding and light-mixing element has a second pair of mutually opposite side faces, the maximum spacing of which has a second value. The maximum extent of the light-guiding and light-mixing element in the light propagation direction of the electromagnetic radiation has a third value. This third value is greater than the first value and is smaller than the second value.

Asymmetric structures formed on a substrate and microlithographic methods for forming such structures. Each of the structures has a first side surface and a second side surface, opposite the first side surface. A profile of the first side surface is asymmetric with respect to a profile of the second side surface. The structures on the substrate are useful as a diffraction pattern for an optical device.

The present disclosure relates a method of forming substrate identification marks. In some embodiments, the method may be performed by forming a photosensitive material over a substrate. A first type of electromagnetic radiation is selectively provided to the photosensitive material to expose a plurality of substrate identification marks within the photosensitive material, and a second type of electromagnetic radiation is selectively provided to the photosensitive material to expose one or more alignment marks within the photosensitive material. Exposed portions of the photosensitive material are removed to form a patterned photosensitive material. The substrate is etched according to the patterned photosensitive material to form recesses within the substrate that are defined by the plurality of substrate identification marks and the one or more alignment marks.

A method of fabricating a semiconductor device may include providing a substrate including cell and peripheral regions, forming a cell gate structure on the cell region, forming a peripheral gate structure on the peripheral region, forming a bit line structure on the cell region, forming a preliminary conductive layer to cover the bit line structure and the peripheral gate structure, and etching the preliminary conductive layer to form a landing pad and peripheral conductive pads. The etching of the preliminary conductive layer may include forming lower and photoresist layers on the preliminary conductive layer, performing a first exposure process on the photoresist layer, performing a second exposure process on the photoresist layer, and etching the preliminary conductive layer using the photoresist and lower layers as an etch mask. The first exposure process may expose a portion of the photoresist layer that is on the cell region to light.

A real-time variable parameter micro-nano optical field modulation system includes a light source, a 4F optical system and a set of light wave modulation optical components. The 4F optical system includes a first optical assembly and a second optical assembly arranged along an optical path in sequence. The light wave modulation optical components are arranged between the first optical assembly and the second optical assembly, and generate optical field distribution with adjustable patterns and structural parameters thereof on a back focal plane of the system by segmented modulation of sub-wavefronts.