A maskless photolithoghrapic system includes a laser point-by-point scanning exposure unit, a plane-projection exposure unit, a mobile station and a calculation control unit that decomposes a pattern to be exposed, so that a pattern portion with a precision requirement below a pre-determined threshold is exposed by the laser point-by-point scanning exposure unit, and a pattern portion with a precision requirement greater than the pre-determined threshold is exposed by the plane-projection exposure unit; when conducting laser point-by-point scanning exposure on a sample on the mobile station, the light emitted by the laser point-by-point scanning exposure unit moves relative to the sample according to the pattern portion with a precision requirement below the pre-determined threshold; and when conducting plane-projection exposure on the sample, the plane-projection exposure unit emits light with a corresponding pattern shape onto the sample according to the graph with a precision requirement greater than the pre-determined threshold.

A method forms a pattern of metallic nanofeatures that generates by plasmonic resonance a desired image having a distribution of colors. The method includes providing a substrate having a layer of photosensitive material, exposing the layer to a high-resolution periodic pattern of dose distribution, and determining a low-resolution pattern of dose distribution such that the sum of the low-resolution pattern and the high-resolution periodic pattern of dose distribution is suitable for forming the pattern of metallic nanofeatures. The lateral dimensions of the metallic nano-features have a spatial variation across the pattern that corresponds to the distribution of colors in the desired image. The layer of photosensitive material is exposed to the low-resolution pattern of dose distribution. The layer of photosensitive material is developed to produce a pattern of nanostructures in the developed photosensitive material. The pattern of nanostructures is processed so that the pattern of metallic nanofeatures is formed.

An extreme ultraviolet (EUV) exposure system capable of improving the yield of an EUV exposure process by improving EUV exposure performance, and furthermore, capable of increasing throughput or productivity of the EUV exposure process, the EUV exposure system including an EUV exposure apparatus configured to perform EUV exposure on a wafer disposed on a chuck table, a load-lock chamber combined with the EUV exposure apparatus and configured to supply and discharge the wafer to/from the EUV exposure apparatus, and an ultraviolet (UV) exposure apparatus configured to perform UV exposure by irradiating an entire upper surface of the wafer with a UV light without using a mask.

The present invention relates firstly to a method for reproducing a stem cell niche of an organism. The invention further relates to a reproduction of a stem cell niche of an organism. According to the invention, an image of a tissue of an organism is generated, which tissue comprises at least one stem cell niche. The image is filtered in order to obtain a structural pattern of the imaged stem cell niche. In a further step, a lithographic mask is generated from the structural pattern. According to the invention, a starting material of a substrate is structured by means of indirect or direct application of the lithographic mask, whereby a structured substrate is obtained which represents the reproduction of the imaged stem cell niche of the organism. The reproduction can be characterised as biolithomorphic.

Methods, systems, and apparatus for identifying a non-rectangular shape outline of a first field of a substrate, the first field directly adjacent to a second field; adjusting an exposure profile of an ultraviolet light beam based on the non-rectangular shape outline of the first field to provide a non-rectangular exposure profile of the ultraviolet light beam; disposing a polymerizable composition on the first field of the substrate; contacting the polymerizable composition in the first field with an imprint lithography template; and while contacting the polymerizable composition in the first field with the imprint lithography template, directing the ultraviolet light beam having the non-rectangular exposure profile towards the substrate such that the ultraviolet light beam irradiates only the first field of the substrate.

A method of exposing a patterned area on a substrate using an EUV lithographic apparatus having a demagnification of about 5 and a numerical aperture of about 0.4 is disclosed. The method comprises exposing a first portion of the patterned area on the substrate using a first exposure, the first portion dimensions are significantly less than the dimensions of a conventional exposure, and exposing one or more additional portions of the patterned area on the substrate using one or more additional exposures, the additional portions having dimensions which are significantly less than the dimensions of a conventional exposure. The method further comprises repeating the above to expose a second patterned area on the substrate, the second patterned area being provided with the same pattern as the first patterned area, wherein a distance between center points of the first and second patterned areas corresponds with a dimension of a conventional exposure.

A pattern forming photo-curing layer is heated, thereby enabling quick shaping. A pattern manufacturing apparatus (100) includes a controller (101), a laser projector (102), and a heater (103). The controller (101) controls the laser projector (102) to form a pattern on a pattern forming sheet (130) placed on a stage (140). The laser projector (102) includes an optical engine (121), and the controller (101) controls the laser projector (102) to irradiate the pattern forming sheet (130) with a light beam from the optical engine (121). The heater (103) heats the pattern forming sheet (130).

Asymmetric structures formed on a substrate and microlithographic methods for forming such structures. Each of the structures has a first side surface and a second side surface, opposite the first side surface. A profile of the first side surface is asymmetric with respect to a profile of the second side surface. The structures on the substrate are useful as a diffraction pattern for an optical device.

The present invention provides a method for multiscale patterning of a sample. The method includes: placing the sample in an apparatus having both thermo-optical lithography capability and thermal scanning probe lithography capability; and patterning two patterns onto the sample, respectively by: thermo-optical lithography, wherein light is emitted from a light source onto the sample to heat the latter and thereby write a first pattern that is the largest of the two patterns; and thermal scanning probe lithography, wherein the sample and a heated probe tip are brought in contact for writing a second pattern that has substantially smaller critical dimensions than the first pattern. There is also provided an apparatus for multiscale patterning of a sample.

In accordance with an embodiment of the disclosure, a tip array can include an elastomeric tip substrate layer comprising a first surface and an oppositely disposed second surface, the tip substrate layer being formed from an elastomeric material; a plurality of tips fixed to the first surface, the tips each comprising a tip end disposed opposite the first surface, the tips having a radius of curvature of less than about 1 micron; and an array of heaters disposed on the second surface of the tip substrate layer and configured such that when the tip substrate layer is heated by a heater, a tip disposed in a location of a heated portion of tip substrate layer is lowered relative to a tip disposed in a location of an unheated portion of the tip substrate layer.