A method for manufacturing semiconductor devices include steps of depositing a first photoresist over a first dielectric layer, first exposing the first photoresist to a first light-exposure using a first lithographic mask, and second exposing the first photoresist to a second light-exposure using a second lithographic mask. An overlap region of the first photoresist is exposed to both the first light-exposure and the second light-exposure. The first dielectric layer is thereafter patterned to form a mask overlay alignment mark in the overlap region. The patterning includes etching the first dielectric layer form a trench, and filling the trench with a conductive material to produce the alignment mark. A second dielectric layer is deposited over the alignment mark, and a second photoresist is deposited over the second dielectric layer. A third lithographic mask is aligned to the second photoresist using the underlying mask overlay alignment mark for registration.

A method for assigning features into at least first features and second features, the first features being for at least one first patterning device configured for use in a lithographic process to form corresponding first structures on a substrate and the second features being for at least one second patterning device configured for use in a lithographic process to form corresponding second structures on a substrate, wherein the method including assigning the features into the first features and the second features based on a patterning characteristic of the features.

Examples of a multiple-mask multiple-exposure lithographic technique and suitable masks are provided herein. In some examples, a photomask includes a die area and a stitching region disposed adjacent to the die area and along a boundary of the photomask. The stitching region includes a mask feature for forming an integrated circuit feature and an alignment mark for in-chip overlay measurement.

A lithographic apparatus comprising a substrate storage module having a controllable environment for protecting lithographically exposed substrates from ambient air. The substrate storage module is configured to store at least twenty substrates and the substrate storage module is an integral part of the lithographic apparatus. The substrate storage module may be used to protect substrates from ambient air during stitched lithographic exposures.

Described are methods for enabling the creation of multiple similar designs by utilizing sets of multiple, disjoint fabrication masks. A first set of device features may be formed from a material layer in a first portion of a die area of a semiconductor substrate based on a first photolithographic exposure. A second set of device features may be formed from the material layer in a second portion of the die area of the semiconductor substrate based on a second photolithographic exposure after the first photolithographic exposure. The first portion of the die area and the second portion of the die area may be non-overlapping.

A mask is provided. The mask includes a plurality of light blocking strips configured to block light and bounding spaces through which light is allowed to pass. The plurality of light blocking strips are arranged in a mesh shape, and include first light blocking strips located in at least one side edge of the mask, and second light blocking strips, and each of the first light blocking strips has a greater width than each of the second light blocking strips. An exposure method using the mask, and a touch display panel manufactured by the exposure method are also provided.

A display device includes: a first substrate including a display area and a non-display area including a first non-display area and a second non-display area on respective sides of the display area with respect to a first direction; a color filter in the display area and including a first color filter, a second color filter, and a third color filter; and a color filter dam in the non-display area, wherein the color filter dam includes a first color filter dam in the first non-display area and a second color filter dam in the second non-display area, the first color filter dam includes a same material as the first color filter, and the second color filter dam includes a same material as the second color filter.

The method includes the steps of: a) dividing a large-scale touch sensing pattern to be manufactured into multiple divisional patterns and producing multiple photomasks corresponding to the multiple divisional patterns; b) providing a substrate with a conductive layer; c) disposing a photoresist layer on the conductive layer; d) a first exposure process: forming an exposing divisional pattern and multiple first targets the photoresist layer; e) an adjacent exposure process: forming an adjacent exposing divisional pattern and multiple second targets, and adjacently connecting the adjacent exposing divisional pattern and the exposing divisional pattern originally on the photoresist layer; f) repeating the adjacent exposure process to form multiple adjacent exposing divisional patterns until a complete exposing pattern has been assembled; g) performing a developing process to the photoresist layer; and h) etching the conductive layer to form the large-scale touch sensing pattern on the conductive layer.

Aspects of disclosure provide a method for attaching wiring connections to a component using both design and field measured data of the component to produce accurate wiring connections.

A method of forming patterned features on a substrate is provided. The method includes: positioning a first mask over a first portion of a substrate; directing radiation through the patterned area of the first mask at the first portion of the substrate to form a first patterned region on the substrate; positioning a second mask over a second portion of the substrate, the second mask including a first patterned area and a second patterned area, the first patterned area spaced apart from the second patterned area by an unpatterned area; directing radiation through the first patterned area of the second mask at a first part of the second portion of the substrate to form a second patterned region on the substrate; and directing radiation through the second patterned area of the second mask at a second part of the second portion of the substrate to form a third patterned region.