Disclosed is a method for cleaning a photo mask. The method includes a pre-treatment operation of wetting a chemical on an entire surface of the photo mask in a state in which the photo mask is stopped, and a cleaning operation of supplying the chemical to a pattern area of the photo mask in a state in which the photo mask is rotated.

An imprinting system according to an embodiment includes a first measuring device measuring an intensity of light reflected from an end of a shot area of a monitor substrate being an area on which imprinting has been performed, a dripping condition generating device generating a dripping condition of a resin-based mask material on the basis of the measured intensity of light, and an imprinting apparatus performing imprinting using the dripping condition. The imprinting apparatus includes a second measuring device measuring an intensity of light reflected from an end of a first shot area of a production substrate being an area on which imprinting has been performed, and a control unit adjusting arrangement of droplets of a resin-based mask material ejected on a second shot area of the production substrate being an area on which imprinting is to be performed on the basis of an intensity of light reflected from an end of the first shot area.

To provide a method of separating a pellicle and a device for separating a pellicle which can reduce the amount of residue left on an exposure original plate when the pellicle is separated from the exposure original plate and which can wash again the exposure original plate under mitigated washing conditions, a pellicle frame support pin is inserted into a jig hole provided in an outer surface of the pellicle frame, the pellicle frame support pin is moved in a direction in which the pellicle is separated from the exposure original plate, a separation force applied by the movement to the pellicle frame support pin is measured and the pellicle is separated from the exposure original plate while control is being performed such that the separation force is minimized.

An extreme ultraviolet light generation device according to an aspect of the present disclosure includes: a chamber; a mirror configured to condense extreme ultraviolet light radiated from plasma generated by irradiating a target supplied into the chamber with a laser beam; an electromagnet disposed outside the chamber to form a magnetic field between a generation region of the plasma in the chamber and the mirror; a current inversion device configured to invert the direction of current flowing through the electromagnet; and a controller configured to control the current inversion device to invert the direction of the current when a set condition is satisfied.

System and method for removing molecular contaminants from an air stream are disclosed. The system includes first, second and third filter. The first filter removes organic contaminants from an air stream passing through the first filter. The second filter is downstream of the first filter, is physically and chemically exchangeable with the first filter and removes organic contaminants from the air stream output of the first filter. The third filter, downstream of the second filter, is not exchangeable with the first filter or the second filter. The first position filter can be replaced by the second filter in the second position when the first filter in the first position becomes depleted as detected. A new filter in the second filter position is inserted. Replacing the depleted first filter with the second downstream filter reduces costs and waste while inserting the new filter in the second position ensures removing organic contaminants.

Embodiments described herein relate to a dynamically controlled lens used in lithography tools. Multiple regions of the dynamic lens can be used to transmit a radiation beam for lithography process. By allowing multiple regions to transmit the radiation beam, the dynamically controlled lens can have an extended life cycle compared to conventional fixed lens. The dynamically controlled lens can be replaced or exchanged at a lower frequency, thus, improving efficiency of the lithography tools and reducing production cost.

An extreme ultraviolet light generation apparatus may include: a chamber device including an internal space; a target supply unit disposed at the chamber device and configured to supply a droplet of a target substance to the internal space; a target collection unit disposed at the chamber device, communicated with the internal space through an opening provided to an inner wall of the chamber device, and configured to collect the droplet passing through the opening; a detection unit disposed at the chamber device and configured to detect the target substance accumulating in the vicinity of the opening of the inner wall; and a control unit configured to stop the target supply unit depending on a result of the detection by the detection unit.

An extreme ultraviolet (EUV) lithography system includes a vane bucket module. The vane bucket module includes a collecting tank and a temperature adjusting pack. The collecting tank has a cover and the cover includes a plurality of through holes. Thicknesses of edges of the cover is greater than a thickness of a center of the cover. The temperature adjusting pack surrounds the collecting tank. The temperature adjusting pack includes a plurality of inlets aligned with the through holes.

A method, a system, and a controller for imprinting. Apply droplets of a formable material to imprint region of substrate. A partial pressure of formable material develops at a fluid-gas interface. A portion of an imprinting surface of a mesa on a template at an initial contact time is brought into contact with the droplets. The droplets merge and flow towards an imprint edge interface. A first gas flows in the imprint region prior to the initial contact time. A second gas flows into the imprint edge interface and region between the template and the substrate after the initial contact time. The template and the flow of the second gas reduces the partial pressure of the formable material below a vapor pressure of the formable material in a portion of the gap region adjacent to the fluid-gas interface at the imprint edge interface.

An optical arrangement for EUV lithography, including: at least one component (23) having a main body (32) with at least one surface region (30) which is exposed to activated hydrogen (H.sup.+, H.sup.*) during operation of the optical arrangement. The main body (32) contains at least one material which forms at least one volatile hydride upon contact of the surface region (30) with the activated hydrogen (H.sup.+, H.sup.*). At the surface region, noble metal ions (38) are implanted into the main body (32) in order to prevent the formation of the volatile hydride.