A method includes transferring a wafer over a wafer stage on a wafer table. The wafer table includes a table body, a wafer stage, a first sliding member, a second sliding member, a first cable, a first bracket and a second bracket, and a stopper. The second sliding member is movable along a first direction, in which the first sliding member is coupled to a track of the second sliding member, the first sliding member being movable along a second direction vertical to the first direction. The first bracket and the second bracket are connected by a leaf spring. The method includes moving the wafer stage toward the edge of the table body, such that the wafer stage pushes the first cable outwardly, such that the leaf spring is moved toward a first protective film on a surface of the stopper facing the leaf spring.

Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a process chamber having an opening, a shutter that opens and closes the opening through a rotation thereof, and a shutter driver having a cylinder that opens and closes the shutter, and the shutter driver includes a controller that controls a pneumatic pressure provided to the cylinder such that, when the shutter is rotated from an opening location to a closing location, a rotational speed of the shutter in a first rotation section including the opening location and a rotational speed of the shutter in a second rotation section including the closing location are different.

A protective apparatus for lines between two components of a projection exposure apparatus for semiconductor lithography is firmly connected to the two components. the protective apparatus includes first and second partial regions which are configured to protect against mechanical damage to the lines. The first partial region is at least temporarily configured to mechanically decouple the first component from the second component.

A system for switching between an optical pellicle and an EUV pellicle includes one or more inspection tools configured to perform one or more inspection processes on a mask. The system includes one or more extreme ultraviolet (EUV) lithography tools configured to perform one or more lithographic exposures on the mask. The system includes a dual pellicle handler operatively coupled to the one or more inspection tools and the one or more EUV lithography tools, wherein the dual pellicle handler is configured to attach at least one of an optical pellicle or an EUV pellicle to the mask, wherein the dual pellicle handler is configured to detach at least one of the optical pellicle or the EUV pellicle from the mask.

An extreme ultraviolet light source apparatus includes a disc-shaped cathode rotating about an axis, a disc-shaped anode rotating about an axis, an energy beam irradiation device irradiating a plasma raw material on the cathode with an energy beam to vaporize the plasma raw material, a power supply for causing a discharge between the cathode and the anode for generating a plasma in the gap between the cathode and the anode to emit extreme ultraviolet light, and an irradiation position adjusting mechanism for adjusting a position at which the cathode is irradiated with the energy beam. The cathode, the anode, and the irradiation position adjusting mechanism are accommodated in a housing. A photography device is disposed outside the housing and is configured to photograph a visible-light image of a vicinity of the cathode and the anode, the vicinity including visible light emitted from the plasma.

An EUV lithographic apparatus includes a wafer stage and a particle removing assembly for cleaning a wafer for an extreme ultraviolet (EUV) lithographic apparatus. The wafer stage includes a measurement side and an exposure side. The particle removing assembly includes particle removing electrodes, an exhaust device and turbomolecular pumps. The particle removing electrodes is configured to direct debris from the chamber by suppressing turbulence such that the debris can be exhausted from the wafer stage to the outside of the processing apparatus. In some embodiments, turbomolecular pumps are turned off in the measurement side of the wafer stage so that an exhaust flow can be guided to an exposure side of the wafer stage. In some embodiments, the speed of voltage rise to the electrodes of the wafer chuck is adjusted.

A fluid handling structure for a lithographic apparatus is disclosed. The fluid handling structure has a plurality of openings arranged in plan, in a line. The fluid handling structure is configured such that the openings are directed, in use, towards a facing surface, the facing surface being a substrate and/or a substrate table. The substrate table is configured to support the substrate. Outward of the line of openings is a damper. The damper may have a width that varies along the line of openings. The damper width is defined between the line of openings and an opposing damper edge.

A substrate processing apparatus includes: a processing block in which a substrate is sequentially transferred and processed; a carry-in/out transfer mechanism that carrys-in/out the substrate with respect to modules; a carry-out module configured to place the substrate therein after the substrate is processed; a multi-module configured by a plurality of modules having a same order in which the substrate is transferred in the processing block; a main transfer mechanism that moves around in a transfer path provided in the processing block to deliver the substrate among the modules; and a controller that sets a first transfer schedule including determination of a number of modules to become transfer destinations of the substrate in the multi-module, and determination of a number of stay cycles which is a number of times that the main transfer mechanism moves around after the substrate is carried into the multi-module until the substrate is carried out.

A beam-splitting apparatus arranged to receive an input radiation beam and split the input radiation beam into a plurality of output radiation beams. The beam-splitting apparatus comprising a plurality of reflective diffraction gratings arranged to receive a radiation beam and configured to form a diffraction pattern comprising a plurality of diffraction orders, at least some of the reflective diffraction gratings being arranged to receive a 0.sup.th diffraction order formed at another of the reflective diffraction gratings. The reflective diffraction gratings are arranged such that the optical path of each output radiation beam includes no more than one instance of a diffraction order which is not a 0.sup.th diffraction order.

An exposure system is equipped with: chambers in a first row that are disposed on the +X side with respect to a C/D installed on a floor surface; chambers in a second row that are disposed on the +Y side of the chambers in the first row, facing the chambers in the first row; and a measurement chamber and a control rack that are disposed adjacently on the −X side with respect to the chambers in the first row and the second row and besides on the +X side of the C/D. Inside at least some of the chambers, an exposure room where exposure is performed is formed, and the control rack distributes utility supplied from below the floor surface to each of the chambers in the first row and the second row.