Various embodiments of the present technology generally relate to substrate planarization. More specifically, some embodiments of the present technology relate a versatile systems and methods for precision surface topography optimization known as planarization on nominally planar substrates. In some embodiments, a method for planarization of a patterned substrate using inkjets can determine the global and nanoscale topography and pattern information of the patterned substrate. Based upon the global and nanoscale topography and pattern information, a drop pattern can be determined and then dispensed on the patterned substrate. A gap between the patterned substrate and a superstrate causing the dispensed drops can be closed to form a substantially contiguous film. The substantially contiguous film can be cured and the superstrate can be separated from the patterned substrate with substantially contiguous film on the patterned substrate.

The present invention provides an imprint apparatus that forms a pattern of an imprint material on a substrate by using a mold, the apparatus including a control unit configured to control a driving unit and a deformation unit such that parts of position control of controlling the relative positions of the mold and the substrate, and shape control of deforming at least one of the mold and the substrate are performed concurrently, wherein the control unit includes an input unit configured to give, to target position data, time-series data representing relative positions of the mold and the substrate that change at each time during which the shape control is performed in accordance with deformation in at least one of the mold and the substrate by the deformation unit.

A semiconductor device includes: a semiconductor substrate having a first surface; a device area that is formed on the semiconductor substrate and includes a semiconductor element; and a conductive member that surrounds the device area and extends in a first direction perpendicularly intersecting the first surface. The conductive member is formed on the semiconductor substrate, and includes a first pattern and a second pattern, the second pattern overlapping the first pattern in the first direction. A pitch of the first pattern in a second direction intersecting the first direction is different from a pitch of the second pattern in the second direction.

An imprint method of molding an imprint material on a shot region of a substrate using a mold, includes aligning the shot region and the mold in a state where the imprint material and a pattern region of the mold are in contact with each other; and curing the imprint material by irradiating the imprint material with curing light after the aligning. The aligning is controlled so as to include an overlap period during which a period during which deformation light used to deform the shot region is applied to the substrate through the imprint material and a period during which polymerization light used to increase a viscosity of the imprint material is applied to the imprint material overlap each other. The polymerization light to be applied to the imprint material is controlled in accordance with the deformation light to be applied to the imprint material during the overlap period.

A method of disposing a substrate on a holding unit using a pattern forming apparatus which forms a pattern on the substrate, the pattern forming apparatus comprising: a stage, the holding unit removably attached to the stage and configured to suck and hold the substrate, an optical system, and configured to detect an alignment mark of the substrate from a suction surface side of the substrate, the optical system having plural optical elements, and a detection unit configured to detect a reference mark for measuring a position of a detection field of the optical system, the method comprising: detecting a position of the reference mark, and disposing the substrate on the holding unit using the detected position of the reference mark so that the alignment mark of the substrate detected from the suction surface side of the substrate by the optical system is disposed in the detection field.

The present invention provides an imprint method of forming a pattern of an imprint material on a shot region of a substrate using a mold, the method comprising: supplying the imprint material onto the shot region so as to arrange droplets of the imprint material in arrangement patterns different from each other between a first partial region and a second partial region adjacent to each other in the shot region; performing alignment between the mold and the shot region after it is started to bring the mold and the imprint material into contact with each other; performing preliminary curing of irradiating the imprint material on the shot region with light to increase a viscoelasticity of the imprint material before the alignment is completed; and performing main curing of curing the imprint material on the shot region after the alignment is completed.

According to one embodiment, a template includes an alignment mark. The alignment mark includes first marks arranged at a first pitch in a first direction and second marks arranged at a second pitch in the first direction. At least one of the first marks includes a first region and a third region. At least one of the second marks includes a second region and the third region. The first region has first patterns arranged in a line-and-space form in the first direction. The second region has second patterns arranged in a line-and-space form in a second direction orthogonal to the first direction.

A lithography device includes: a pattern forming unit that forms a pattern in a shot region on a substrate held by a substrate holding unit by using a pattern unit; an acquisition unit that acquires relationships among the amount of positional deviation of the substrate relative to the substrate holding unit, a holding force applied to at least a part of the substrate to hold the substrate, and an overlapping error between the substrate and the pattern unit; a measurement unit that measures the amount of positional deviation of the substrate relative to the substrate holding unit; and a control unit that controls the holding force to reduce the overlapping error between the substrate and the pattern unit on the basis of the amount of positional deviation measured by the measuring unit and the relationships acquired by the acquisition unit.

Aspects of the present invention provide a semiconductor structure. The semiconductor structure may include a substrate having a first substrate alignment structure. The semiconductor structure may also include a first die with a first die alignment structure. The first die may be attached to the substrate with the first substrate alignment structure matched to the first die alignment structure.

Provided is an imprint method of performing an imprint process including a contacting step of bringing a mold into contact with an imprint material on a substrate, a curing step of curing the imprint material, and a separating step of separating the mold from the cured imprint material. The method includes acquiring global alignment information, performing a pre-alignment measurement including moving, based on the acquired global alignment information, a second shot region to a measurement position at which a measurement device performs measurement, and measuring a first relative positional shift between the second shot region and the mold using the measurement device, and moving, based on the global alignment information and the measured first relative positional shift, a first shot region to an imprint position at which the imprint process is performed, and starting the contacting step.