An apparatus and a method for forming alignment marks are disclosed. The method for forming alignment marks is a photolithography-free process and includes the following operations. A laser beam is provided. The laser beam is divided into a plurality of laser beams separated from each other. The plurality of laser beams is shaped into a plurality of patterned beams, so that the plurality of patterned beams is shaped with patterns corresponding to alignment marks. The plurality of patterned beams is projected onto a semiconductor wafer.

Among other things, one or more semiconductor arrangements, and techniques for forming such semiconductor arrangements are provided. A layer, such as a poly layer or an inter layer dielectric (ILD) layer, is formed over a substrate. A photoresist mask is formed over the layer. The photoresist mask comprises an open region overlaying a target region of the layer and comprises a protection region overlaying a second region of the layer. An etching process is performed through the open region to reduce a height of the layer in the target region in relation to a height of the layer in the second region because the protection region inhibits the etching process from affecting the layer in the second region. A first structure, having a first height, is formed within the target region. A second structure, having a second height greater than the first height, is formed within the second region.

An apparatus for determining information relating to at least one target alignment mark in a semiconductor device substrate. The target alignment mark is initially at least partially obscured by an opaque carbon or metal layer on the substrate. The apparatus includes an energy delivery system configured to emit a laser beam for modifying at least one portion of the opaque layer to cause a phase change and/or chemical change in the at least one portion that increases the transparency of the portion. An optical signal can propagate through the modified portion to determine information relating to the target alignment mark.

According to one embodiment, a pattern forming method includes forming a resist film including a first core material pattern and a second core material pattern, on a first film laminated on a substrate; forming a second film at least on sidewalls of the first and second core material patterns; removing the first core material pattern while not removing the second core material pattern and the second film; and processing the first film by using, as a mask, the second core material pattern and the second film.

A semiconductor structure body of an embodiment includes a stacked body. In the stacked body, a plurality of conductive layers and a plurality of insulating layers are alternately stacked, and a plurality of through holes penetrating the conductive layers and the insulating layers in the stacking direction are provided. In the interior of the stacked body, in a region corresponding to an identical pair of coordinates in a planar coordinate system intersecting the stacking direction, a plurality of identical alignment marks or deviation measurement marks are formed, with one or more stories each including a predetermined number of conductive layers and a predetermined number of insulating layers interposed therebetween.

Techniques for forming overlay metrology marks are disclosed. In the illustrative embodiment, a first overlay metrology mark is on a first layer of a semiconductor wafer, and a second metrology mark is formed on a second layer above the first layer. The overlay metrology marks are embodied as a series of grating lines. Looking downward at the overlay metrology marks, the two metrology marks form a moire pattern, with the light and dark regions of the moire pattern moving as the relative positions of the overlay metrology marks move. In the illustrative embodiment, at least one of the overlay metrology marks has non-uniform grating line spacing. As a result, the moire pattern is not identical if the overlay metrology mark is shifted by one grating line, allowing for a wider range of overlay errors to be detected.

A method including: subsequent to a first device lithographic step of a device patterning process, measuring a degraded metrology mark on an object and/or a device pattern feature associated with the degraded metrology mark, the degraded metrology mark arising at least in part from the first device lithographic step on the object; and prior to a second device lithographic step of the device patterning process on the object, creating a replacement metrology mark, for use in the patterning process in place of the degraded metrology mark, on the object.

Methods and structures for improving alignment contrast for patterning a metal layer generally includes depositing a metal layer having a plurality of grains, wherein grain boundaries between the grains forms grooves at a surface of the metal layer. The metal layer is subjected to surface treatment to form an oxide or a nitride layer and fill the surface grooves. The metal layer can be patterned using alignment marks in the metal layer and/or underlying layers. Filling the grooves with the oxide or nitride increases alignment contrast relative to patterning the metal layer without the surface treating.

An overlay metrology target (T) is formed by a lithographic process. A first image (740(0)) of the target structure is obtained using with illuminating radiation having a first angular distribution, the first image being formed using radiation diffracted in a first direction (X) and radiation diffracted in a second direction (Y). A second image (740(R)) of the target structure using illuminating radiation having a second angular illumination distribution which the same as the first angular distribution, but rotated 90 degrees. The first image and the second image can be used together so as to discriminate between radiation diffracted in the first direction and radiation diffracted in the second direction by the same part of the target structure. This discrimination allows overlay and other asymmetry-related properties to be measured independently in X and Y, even in the presence of two-dimensional structures within the same part of the target structure.

A mask plate, an alignment mark and a photolithography system are provided. In one form, an alignment mark includes a plurality of alignment patterns arranged at intervals, where the alignment pattern includes a first pattern extending in a first direction and a second pattern extending in a second direction, the first pattern includes a first end and a second end which are opposite to each other in the first direction, the second pattern includes a third end and a fourth end which are opposite to each other in the second direction, the second end is connected to the third end, the fourth end is connected to the first end, and the alignment pattern is a two-dimensional linear pattern.