A position determining device includes a first lighting unit configured to emit light to an edge portion of a rotating substrate and a second lighting unit configured to emit light to at least one mark on a surface of the substrate. The alignment device further includes a light receiving unit disposed on a side corresponding to the surface of the substrate and configured to receive light that is emitted from the first lighting unit and then passes through a region outside the substrate and to receive light that is emitted from the second lighting unit and then reflected from the at least one mark. The position of the substrate is determined based on a result of light reception by the light receiving unit.

A control method of a movable body includes: a step of detecting a part of a plurality of grating marks provided at a wafer placed on a movable body that is movable within an XY plane, while scanning a measurement beam, that is irradiated from a mark detection system, in a Y-axis direction with respect to the part of plurality of grating marks, as moving the movable body in the Y-axis direction; a step of measuring an irradiation position of the measurement beam on the part of the plurality of grating marks; and a step of relatively moving the measurement beam and the movable body in an X-axis direction on the basis of the measurement result of the irradiation position and also detecting another grating mark while scanning the measurement beam in the Y-axis direction.

A pattern forming apparatus which forms a pattern on a substrate, which includes a movable stage, a holding unit removably attached to the stage and configured to suck and hold the substrate, an optical system of which position with respect to the holding unit is fixed, and configured to detect an alignment mark of the substrate which is sucked by the holding unit from a suction surface side of the substrate, a reference mark for measuring a position of a detection field of the optical system, and a detection system configured to detect the reference mark. The substrate is disposed on the holding unit in accordance with the position of the reference mark detected by the detection system so that the alignment mark of the substrate detected from the suction surface side of the substrate by the optical system is disposed in the detection field of the optical system.

Aspects of the present disclosure provide a method of aligning a wafer pattern. For example, the method can include providing a wafer having a reference pattern located below a front side of the wafer, and directing a light beam to the wafer. The method can further include identifying at least one of power and a wavelength of the light beam such that the light beam is capable of passing through the wafer and reaching the reference pattern, or identifying at least one of power and a wavelength of the light beam based on at least one of a material of the wafer and a depth of the reference pattern below the front side of the wafer. The method can further include using the light beam to image the reference pattern.

Two pairs of alignment targets (one aligned, one misaligned by a bias distance) are formed on different masks to produce a first pair of conjugated interference patterns. Other pairs of alignment targets are also formed on the masks to produce a second pair of conjugated interference patterns that are inverted the first. Misalignment of the dark and light regions of first interference patterns and the second interference patterns in both pairs of conjugated interference patterns is determined when patterns formed using the masks are overlaid. A magnification factor (of the interference pattern misalignment to the target misalignment) is calculated as a ratio of the difference of misalignment of the relatively dark and relatively light regions in the pairs of interference patterns, over twice the bias distance. The interference pattern misalignment is divided by the magnification factor to produce a self-referenced and self-calibrated target misalignment amount, which is then output.

A measurement system used in a manufacturing line for micro-devices includes: a plurality of measurement devices in which each device performs measurement processing on a substrate; and a carrying system to perform delivery of a substrate with the plurality of measurement devices. The plurality of measurement devices includes a first measurement device that acquires position information on a plurality of marks formed on a substrate, and a second measurement device that acquires position information on a plurality of marks formed on a substrate. Position information on a plurality of marks formed on a substrate can be acquired under a setting of a first predetermined condition in the first measurement device, and position information on a plurality of marks formed on another substrate can be acquired under a setting of a second predetermined condition different from the first predetermined condition in the second measurement device.

Wafer alignment with restricted visual access has been disclosed. In an example, a method of processing a substrate for fabricating a solar cell involves supporting the substrate over a stage. The method involves forming a substantially opaque layer over the substrate. The substantially opaque layer at least partially covers edges of the substrate. The method involves performing fit-up of the substantially opaque layer to the substrate. The method involves illuminating the covered edges of the substrate with light transmitted through the stage, and capturing a first image of the covered edges of the substrate based on the light transmitted through the stage. The method further includes determining a first position of the substrate relative to the stage based on the first image of the covered edges. The substrate may be further processed based on the determined first position of the substrate under the substantially opaque layer.

The present invention provides a method of aligning a quadrate wafer in a first photolithography process. The method includes: step A: fabricating mask aligning markers in a periphery region of a mask, which is used for a first exposure process of the quadrate wafer, around a mask pattern of the mask; step B: during the first exposure process, positioning the quadrate wafer in a preset region by using the mask aligning markers on the mask, and exposing the quadrate wafer through the mask; and step C: performing alignment for the quadrate wafer during a second exposure process and subsequent exposure processes by using aligning markers on the quadrate wafer that are obtained during the first exposure process. The method may be easily and reliably performed to ensure intact dies at periphery of a quadrate wafer to be produced and thus render increased yield of chips.

A film resist is a member for being bonded to a main surface of a substrate, which main surface is provided with a mark. The film resist includes a cutout for the mark to be checked.

A method of processing a wafer is provided. The method includes providing a reference pattern for patterning a wafer. The reference pattern is independent of a working surface of the wafer. A placement of a first pattern on the working surface of the wafer is determined by identifying the reference pattern to align the first pattern. The first pattern is formed on the working surface of the wafer based on the placement.