A lithography apparatus includes a formation unit that forms an alignment mark on a substrate by irradiating the substrate that includes a photosensitizer with light, and a transfer unit that aligns the substrate on the basis of the position of the alignment mark and that transfers a pattern to the substrate by illuminating the photosensitizer with exposure light. The formation unit irradiates a material of a grounding of the photosensitizer with irradiation light at a wavelength that differs from that of the exposure light and forms the alignment mark on the material by processing the material with energy of the irradiation light.

A measurement system used in a manufacturing line for micro-devices includes: a plurality of measurement devices in which each device performs measurement processing on a substrate; and a carrying system to perform delivery of a substrate with the plurality of measurement devices. The plurality of measurement devices includes a first measurement device that acquires position information on a plurality of marks formed on a substrate, and a second measurement device that acquires position information on a plurality of marks formed on a substrate. Position information on a plurality of marks formed on a substrate can be acquired under a setting of a first predetermined condition in the first measurement device, and position information on a plurality of marks formed on another substrate can be acquired under a setting of a second predetermined condition different from the first predetermined condition in the second measurement device.

According to one embodiment, a value of a film thickness of a processing object disposed above a substrate is obtained. Then, a wavelength that provides a highest degree of intensity of signal light reflected when the signal light is incident onto the processing object having the value of the film thickness, based on wavelength selection reference information is selected. Then, a first instruction performing an alignment process to the substrate by use of signal light having a wavelength thus selected is generated. The wavelength selection reference information is information that includes a correlation between values of the film thickness of the processing object and degrees of intensity of the signal light, with respect to a plurality of wavelengths.

A photolithography alignment method includes: performing alignment measurement of a surface condition of a wafer to obtain alignment information of the wafer; and sectioning the wafer into a plurality of areas to be processed according to the alignment information, and determining photolithography alignment parameters corresponding to each area to be processed.

An imprint apparatus using a mold having a pattern region includes an irradiation unit that irradiates a substrate with irradiation light. The irradiation light has an intensity distribution over a region along a periphery of a shot area of the substrate and being capable of increasing viscosity of an imprint material or of solidifying the imprint material. The imprint apparatus also includes a control unit that sets an imprint condition for forming a pattern of the imprint material so as to reduce at least one of an extrusion of the imprint material from the shot area and an unfilling of the imprint material occurring in the shot area on the basis of results of detecting at least one of the extrusion and the unfilling of the imprint material obtained by detecting the pattern of the imprint material formed on the substrate.

In a method for fabricating a resist pattern, a substrate coated with a photo resist is loaded on a stage of an exposure apparatus. Underlying patterns are fabricated on the substrate. A surface slope of an exposure area on the substrate is measured. An alignment measurement is performed by detecting an alignment pattern formed in the underlying patterns. An alignment measurement result is corrected based on the measured surface slope. The substrate is aligned to a photo mask by using the corrected alignment measurement result. The photo resist is exposed to radiation passing through the photo mask to form patterns.

A system comprises a topography measurement system configured to determine a respective height for each of a plurality of locations on a substrate; and a processor configured to: determine a height map for the substrate based on the determined heights for the plurality of locations; and determine at least one alignment parameter for the substrate by comparing the height map and a reference height map, wherein the reference height map comprises or represents heights for a plurality of locations on a reference substrate portion.

An edge-dominant alignment method for use in an exposure scanner system is provided. The method includes the steps of: providing a wafer having a plurality of shot areas, wherein each shot area has a plurality of alignment marks; determining a first outer zone of the wafer, wherein the first outer zone includes a first portion of the shot areas along a first outer edge of the wafer; determining a scan path according to the shot areas of the first outer zone; and performing an aligning process to each shot area of the first outer zone according to the scan path and an alignment mark of each shot area of the first outer zone.

An alignment mark searching method is for searching an alignment mark on a base substrate, a first positioning line segment is formed in a dummy region of the base substrate, and a straight line where the first positioning line segment is positioned running through the alignment mark. The method includes: acquiring theoretical coordinates of the alignment mark; moving a detection system view field to a target position with the theoretical coordinates as a target; moving the detection system view field from the target position in a direction perpendicular to the first positioning line segment until the first positioning line segment appears in the detection system view field; and moving the detection system view field from the position of the first positioning line segment in a length direction of the first positioning line segment until the alignment mark appears in the detection system view field. The method achieves an effect that the alignment mark can be simply, conveniently and rapidly searched. A display substrate and a display apparatus are further disclosed.

A method for measuring wafer alignment is provided. The method includes providing a plurality of first mark patterns extending in a first direction on a wafer, providing at least one second mark pattern on the first mark patterns such that it overlaps and intersects the first mark patterns, irradiating an optical signal onto the first mark patterns and the second mark pattern and obtaining coordinates of the second mark pattern by detecting signals from the second mark pattern.