A61B5/245

Continuous autoregulation system

A method for measuring an intracranial bioimpedance in a patient's head, to help evaluate cerebral autoregulation, may involve securing a volumetric integral phase-shift spectroscopy (VIPS) device to the patient's head, measuring the intracranial bioimpedance with the VIPS device by measuring a phase shift between a magnetic field transmitted from a transmitter on one side of a VIPS device and a magnetic field received at a receiver on another side of the VIPS device, at one or more frequencies, and evaluating cerebral autoregulation in the intracranial bioimpedance, using a processor in the VIPS device.

Continuous autoregulation system

A method for measuring an intracranial bioimpedance in a patient's head, to help evaluate cerebral autoregulation, may involve securing a volumetric integral phase-shift spectroscopy (VIPS) device to the patient's head, measuring the intracranial bioimpedance with the VIPS device by measuring a phase shift between a magnetic field transmitted from a transmitter on one side of a VIPS device and a magnetic field received at a receiver on another side of the VIPS device, at one or more frequencies, and evaluating cerebral autoregulation in the intracranial bioimpedance, using a processor in the VIPS device.

Integrated magnetometer arrays for magnetoencephalography (MEG) detection systems and methods

An array of optically pumped magnetometers includes a vapor cell arrangement having a wafer defining one or more cavities and alkali metal atoms disposed in the cavities to provide an alkali metal vapor; an array of light sources, each of the light sources arranged to illuminate a different portion of the one or more cavities of the vapor cell arrangement with light; at least one mirror arranged to reflect the light from the array of light sources after the light passes through the one or more cavities of the vapor cell arrangement; and an array of detectors to receive light reflected by the at least one mirror, wherein each of the detectors is arranged to receive light originating from one of the light sources.

MAGNETIC SENSOR AND INSPECTION DEVICE

According to one embodiment, a magnetic sensor includes a first magnetic element, a second magnetic element, a third magnetic element located between the first and second magnetic elements in a first direction, a fourth magnetic element located between the third and second magnetic elements in the first direction, a first conductive member, a second conductive member, a third conductive member located between the first and second conductive members in the first direction, a fourth conductive member located between the third and second conductive members in the first direction, a first magnetic member, a second magnetic member, a third magnetic member located between the first and second magnetic members in the first direction, a fourth magnetic member located between the third and second magnetic members in the first direction, and a fifth magnetic member located between the third and fourth magnetic members in the first direction.

MAGNETIC SENSOR AND INSPECTION DEVICE

According to one embodiment, a magnetic sensor includes a first magnetic element, a second magnetic element, a third magnetic element located between the first and second magnetic elements in a first direction, a fourth magnetic element located between the third and second magnetic elements in the first direction, a first conductive member, a second conductive member, a third conductive member located between the first and second conductive members in the first direction, a fourth conductive member located between the third and second conductive members in the first direction, a first magnetic member, a second magnetic member, a third magnetic member located between the first and second magnetic members in the first direction, a fourth magnetic member located between the third and second magnetic members in the first direction, and a fifth magnetic member located between the third and fourth magnetic members in the first direction.

SYSTEM OF QUANTUM SENSORS FOR MAGNETOENCEPHALOGRAPHY
20220175290 · 2022-06-09 · ·

A measurement system is proposed for building a magnetic field map of an object. The system comprising: a light source arrangement for emitting a plurality of light beams, a respective light beam being configured to travel in the measurement system along a respective optical path; a plurality of measurement sensors sharing a first magneto-optical layer comprising at least a first Faraday material layer and a first light reflector for reflecting the plurality of light beams travelled through the first Faraday material layer in a first direction back to the first Faraday material layer in a second, opposite direction; one or more reference sensors; and one or more light detectors.

SYSTEM OF QUANTUM SENSORS FOR MAGNETOENCEPHALOGRAPHY
20220175290 · 2022-06-09 · ·

A measurement system is proposed for building a magnetic field map of an object. The system comprising: a light source arrangement for emitting a plurality of light beams, a respective light beam being configured to travel in the measurement system along a respective optical path; a plurality of measurement sensors sharing a first magneto-optical layer comprising at least a first Faraday material layer and a first light reflector for reflecting the plurality of light beams travelled through the first Faraday material layer in a first direction back to the first Faraday material layer in a second, opposite direction; one or more reference sensors; and one or more light detectors.

BRAIN-BASED SYSTEM AND METHODS FOR EVALUATING TREATMENT EFFICACY TESTING WITH OBJECTIVE SIGNAL DETECTION AND EVALUATION FOR INDIVIDUAL, GROUP OR NORMATIVE ANALYSIS
20220175303 · 2022-06-09 · ·

Systems and methods for the evaluation of clinical treatment efficacy is disclosed. The systems and methods include protocols for selection of appropriate patients/subjects for the evaluation of a specific clinical treatment. The systems and methods are based on objective measures of brain activity. The clinical treatments include pharmacological compounds in development or existing compounds approved by the appropriate regulatory authority (e.g., U.S. Federal Drug Administration), as well as transcranial magnetic or electric stimulation, including non-invasive approaches as well as grid- or depth-based electrode arrays, as well as behavioral therapies.

Magnetic sensor, biological cell sensing device, and diagnostic device

According to one embodiment, a magnetic sensor includes a first sensor element and a first interconnect. The first sensor element includes a first magnetic layer, a first opposing magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the first opposing magnetic layer. A first magnetization of the first magnetic layer is aligned with a first length direction crossing a first stacking direction from the first magnetic layer toward the first opposing magnetic layer. At least a portion of the first interconnect extends along the first length direction. The first interconnect cross direction crosses the first length direction and is from the first sensor element toward the portion of the first interconnect. A first electrical resistance of the first sensor element changes according to an alternating current flowing in the first interconnect and a sensed magnetic field applied to the first sensor element.

Magnetic sensor, biological cell sensing device, and diagnostic device

According to one embodiment, a magnetic sensor includes a first sensor element and a first interconnect. The first sensor element includes a first magnetic layer, a first opposing magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the first opposing magnetic layer. A first magnetization of the first magnetic layer is aligned with a first length direction crossing a first stacking direction from the first magnetic layer toward the first opposing magnetic layer. At least a portion of the first interconnect extends along the first length direction. The first interconnect cross direction crosses the first length direction and is from the first sensor element toward the portion of the first interconnect. A first electrical resistance of the first sensor element changes according to an alternating current flowing in the first interconnect and a sensed magnetic field applied to the first sensor element.