A reliable lithography model generating method reflecting a mask bias variation and a mask manufacturing method including the lithography model generating method are provided. The lithography model generating method includes preparing basic image data for learning, preparing transform image data that indicates a mask bias variation, generating a lithography model by performing deep learning by combining the basic image data and the transform image data, and verifying the lithography model.

A system may include a model calibration engine configured to determine a candidate lithography model set from which to calibrate a lithography model according to multiple objectives, including by initializing a population of parent candidate models, generating child candidate models, merging the parent and child candidate models into a merged population, classifying the candidate models of the merged population into tiers of non-dominated fronts according to respective objective functions for the multiple objectives, determining a subset of the merged population based on the classified tiers, and identifying, as the candidate lithography model set, a Pareto-optimal front of the subset of the merged population determined based on the classified tiers. The system may also include a model selection engine configured to set a given candidate lithography model in the candidate lithography model set as a calibrated lithography model for simulating a lithographic process.

A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. The area comprises a plurality of pixels, and the original set of exposure information comprises dosages for the plurality of pixels in the area. A backscatter is calculated for a sub area of the area based on the original set of exposure information. A dosage for at least one pixel in a plurality of pixels in the sub area is increased, in a location where the backscatter of the sub area is below a pre-determined threshold, thereby increasing the backscatter of the sub area. A modified set of exposure information is output, including the increased dosage of the at least one pixel in the sub area.

There are provided a lithography method capable of selecting best resist and a semiconductor device manufacturing method and exposure equipment based on the lithography method. The lithography method includes estimating a shape of a virtual resist pattern based on a multi-scale simulation for resist, forming a test resist pattern by performing exposure on selected resist based on the simulation result, comparing the test resist pattern with the virtual resist pattern, and forming a resist pattern on an object to be patterned by using the resist when an error between the test resist pattern and the virtual resist pattern is in an allowable range.

Described herein are methods and systems for chamber matching in a manufacturing facility. A method may include receiving a first chamber recipe advice for a first chamber and a second chamber recipe advice for a second chamber. The chamber recipe advices describe a set of tunable inputs and a set of outputs for a process. The method may further include adjusting at least one of the set of first chamber input parameters or the set of second chamber input parameters and at least one of the set of first chamber output parameters or the set of second chamber output parameters to substantially match the first and second chamber recipe advices.

A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. A backscatter is calculated for the area of the pattern based on the exposure information. An artificial background dose is determined for the area. The artificial background dose comprises additional exposure information and is combined with the original set of exposure information creating a modified set of exposure information. A system for exposing a pattern in an area on a surface using a charged particle beam lithography is also disclosed.

Examples of synchronized parallel tile computation techniques for large area lithography simulation are disclosed herein for solving tile boundary issues. An exemplary method for integrated circuit (IC) fabrication comprises receiving an IC design layout, partitioning the IC design layout into a plurality of tiles, performing a simulated imaging process on the plurality of tiles, generating a modified IC design layout by combining final synchronized image values from the plurality of tiles, and providing the modified IC design layout for fabricating a mask. Performing the simulated imaging process comprises executing a plurality of imaging steps on each of the plurality of tiles. Executing each of the plurality of imaging steps comprises synchronizing image values from the plurality of tiles via data exchange between neighboring tiles.

Techniques for modifying a mask fabrication process based the identification of an abnormality in a pattern of a fabricated lithography mask are disclosed including comparing a fabricated lithography mask to a lithography mask design where the fabricated lithography mask is fabricated based at least in part on the lithography mask design using a mask fabrication process. An abnormality in a pattern of the fabricated lithography mask relative to a corresponding one of the plurality of patterns in the lithography mask design is identified based at least in part on the comparison of the fabricated lithography mask to the lithography mask design. A calibrated mask model is generated based at least in part on the identified abnormality in the pattern of the fabricated lithography mask and the mask fabrication process is modified based at least in part on the calibrated mask model.

A device manufacturing method, the method including: obtaining a measurement data time series of a plurality of substrates on which an exposure step and a process step have been performed; obtaining a status data time series relating to conditions prevailing when the process step was performed on at least some of the plurality of substrates; applying a filter to the measurement data time series and the status data time series to obtain filtered data; and determining, using the filtered data, a correction to be applied in an exposure step performed on a subsequent substrate.

A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. A backscatter is calculated for the area of the pattern based on the exposure information. An artificial background dose is determined for the area. The artificial background dose comprises additional exposure information and is combined with the original set of exposure information creating a modified set of exposure information. A system for exposing a pattern in an area on a surface using a charged particle beam lithography is also disclosed.