An integrated transformer is disclosed. The integrated transformer includes a magnetic core situated in a first layer from among multiple layers of a semiconductor layer stack, a first conductor and a second conductor from among multiple conductors, and a via. The first conductor is situated within a second layer, above the first layer, from among the multiple layers of the semiconductor layer stack. The second conductor is situated within a third layer, below the first layer, from among the multiple layers of the semiconductor layer stack. The via physically and electrically connects the first conductor and the second conductor. The via, the first conductor, and the second conductor form a primary winding of the integrated transformer. The integrated transformer additionally includes a secondary winding, wrapped around the magnetic core, situated in the first layer, the second layer, and the third layer.

A triboelectric power generator system uses a power converter to provide a controllable impedance between a triboelectric power generator and a load, in dependence on the triboelectric generator output. This enables improved power transfer even though the output generated by a triboelectric power generator can be irregular and fluctuates over time.

A triboelectric power generator system uses a power converter to provide a controllable impedance between a triboelectric power generator and a load, in dependence on the triboelectric generator output. This enables improved power transfer even though the output generated by a triboelectric power generator can be irregular and fluctuates over time.

A power supplying apparatus includes a power supply and an alternating current (AC) power generator. The power supply generates a direct current (DC) power. The alternating current (AC) power generator comprises an inductor configured to generate an AC power based on the DC power, wherein the AC power comprises a first AC power with a first AC voltage and a second AC power with a second AC voltage, and the first AC voltage and the second AC voltage have phases opposite to each other.

A semiconductor apparatus includes a control block that generates a first control signal, a second control signal, and a heating enable signal in response to an enable signal and a heating control signal, a temperature measurement block that generates a temperature code corresponding to temperature in response to the first and second control signals, a heater that generates heat while the heating enable signal is being enabled, a code latch block that stores the temperature code in response to the first and second control signals, and outputs a first code and a second code, a control code generation circuit that generates a signal by performing an operation on the first and second codes, and generates a control code by comparing the signal with a preset code, and a reference voltage generation circuit configured to change a voltage level of a reference voltage in response to the control code.

A semiconductor apparatus includes a control block that generates a first control signal, a second control signal, and a heating enable signal in response to an enable signal and a heating control signal, a temperature measurement block that generates a temperature code corresponding to temperature in response to the first and second control signals, a heater that generates heat while the heating enable signal is being enabled, a code latch block that stores the temperature code in response to the first and second control signals, and outputs a first code and a second code, a control code generation circuit that generates a signal by performing an operation on the first and second codes, and generates a control code by comparing the signal with a preset code, and a reference voltage generation circuit configured to change a voltage level of a reference voltage in response to the control code.

An integrated transformer is disclosed. The integrated transformer includes a magnetic core situated in a first layer from among multiple layers of a semiconductor layer stack, a first conductor and a second conductor from among multiple conductors, and a via. The first conductor is situated within a second layer, above the first layer, from among the multiple layers of the semiconductor layer stack. The second conductor is situated within a third layer, below the first layer, from among the multiple layers of the semiconductor layer stack. The via physically and electrically connects the first conductor and the second conductor. The via, the first conductor, and the second conductor form a primary winding of the integrated transformer. The integrated transformer additionally includes a secondary winding, wrapped around the magnetic core, situated in the first layer, the second layer, and the third layer.

An integrated transformer is disclosed. The integrated transformer includes a magnetic core situated in a first layer from among multiple layers of a semiconductor layer stack, a first conductor and a second conductor from among multiple conductors, and a via. The first conductor is situated within a second layer, above the first layer, from among the multiple layers of the semiconductor layer stack. The second conductor is situated within a third layer, below the first layer, from among the multiple layers of the semiconductor layer stack. The via physically and electrically connects the first conductor and the second conductor. The via, the first conductor, and the second conductor form a primary winding of the integrated transformer. The integrated transformer additionally includes a secondary winding, wrapped around the magnetic core, situated in the first layer, the second layer, and the third layer.

A voltage dropping circuit generating a second power source voltage to output to a second node by dropping a first power source voltage supplied to a first node, includes: an output transistor having a first terminal to which the first power source voltage is supplied and a second terminal connected to the second node turns on or off according to a difference between the second power source voltage and a reference voltage; and a back gate variable diode circuit including a diode-connected transistor connected between the first node and the first terminal and to configured to turn on or off according to a voltage difference between the first and second power sources, wherein the first power source voltage is applied to the back gate of the diode-connected transistor when it is higher than the second power source voltage, and the second power source voltage is applied in other case.

A voltage dropping circuit generating a second power source voltage to output to a second node by dropping a first power source voltage supplied to a first node, includes: an output transistor having a first terminal to which the first power source voltage is supplied and a second terminal connected to the second node turns on or off according to a difference between the second power source voltage and a reference voltage; and a back gate variable diode circuit including a diode-connected transistor connected between the first node and the first terminal and to configured to turn on or off according to a voltage difference between the first and second power sources, wherein the first power source voltage is applied to the back gate of the diode-connected transistor when it is higher than the second power source voltage, and the second power source voltage is applied in other case.