A triboelectric power generator system uses a power converter to provide a controllable impedance between a triboelectric power generator and a load, in dependence on the triboelectric generator output. This enables improved power transfer even though the output generated by a triboelectric power generator can be irregular and fluctuates over time.

An integrated transformer is disclosed. The integrated transformer includes a magnetic core situated in a first layer from among multiple layers of a semiconductor layer stack, a first conductor and a second conductor from among multiple conductors, and a via. The first conductor is situated within a second layer, above the first layer, from among the multiple layers of the semiconductor layer stack. The second conductor is situated within a third layer, below the first layer, from among the multiple layers of the semiconductor layer stack. The via physically and electrically connects the first conductor and the second conductor. The via, the first conductor, and the second conductor form a primary winding of the integrated transformer. The integrated transformer additionally includes a secondary winding, wrapped around the magnetic core, situated in the first layer, the second layer, and the third layer.

An integrated transformer is disclosed. The integrated transformer includes a magnetic core situated in a first layer from among multiple layers of a semiconductor layer stack, a first conductor and a second conductor from among multiple conductors, and a via. The first conductor is situated within a second layer, above the first layer, from among the multiple layers of the semiconductor layer stack. The second conductor is situated within a third layer, below the first layer, from among the multiple layers of the semiconductor layer stack. The via physically and electrically connects the first conductor and the second conductor. The via, the first conductor, and the second conductor form a primary winding of the integrated transformer. The integrated transformer additionally includes a secondary winding, wrapped around the magnetic core, situated in the first layer, the second layer, and the third layer.

An integrated transformer can be fabricated to include multiple first conductors, a magnetic core, and multiple second conductors. The first conductor can be fabricated within a first layer of a semiconductor layer stack. The magnetic core can be fabricated within multiple second layers, below the first layer, of the semiconductor layer stack. The multiple second conductors can be fabricated within a third layer, below the second layer, of the semiconductor layer stack. The multiple first conductors can be connected to the multiple second conductors to form a primary winding of the integrated transformer. The integrated transformer can additionally include a coupling element to wrap around the magnetic core to form a secondary winding of the integrated transformer.

An integrated transformer can be fabricated to include multiple first conductors, a magnetic core, and multiple second conductors. The first conductor can be fabricated within a first layer of a semiconductor layer stack. The magnetic core can be fabricated within multiple second layers, below the first layer, of the semiconductor layer stack. The multiple second conductors can be fabricated within a third layer, below the second layer, of the semiconductor layer stack. The multiple first conductors can be connected to the multiple second conductors to form a primary winding of the integrated transformer. The integrated transformer can additionally include a coupling element to wrap around the magnetic core to form a secondary winding of the integrated transformer.

An integrated transformer is disclosed. The integrated transformer includes a magnetic core situated in a first layer from among multiple layers of a semiconductor layer stack, a first conductor and a second conductor from among multiple conductors, and a via. The first conductor is situated within a second layer, above the first layer, from among the multiple layers of the semiconductor layer stack. The second conductor is situated within a third layer, below the first layer, from among the multiple layers of the semiconductor layer stack. The via physically and electrically connects the first conductor and the second conductor. The via, the first conductor, and the second conductor form a primary winding of the integrated transformer. The integrated transformer additionally includes a secondary winding, wrapped around the magnetic core, situated in the first layer, the second layer, and the third layer.

An integrated transformer is disclosed. The integrated transformer includes a magnetic core situated in a first layer from among multiple layers of a semiconductor layer stack, a first conductor and a second conductor from among multiple conductors, and a via. The first conductor is situated within a second layer, above the first layer, from among the multiple layers of the semiconductor layer stack. The second conductor is situated within a third layer, below the first layer, from among the multiple layers of the semiconductor layer stack. The via physically and electrically connects the first conductor and the second conductor. The via, the first conductor, and the second conductor form a primary winding of the integrated transformer. The integrated transformer additionally includes a secondary winding, wrapped around the magnetic core, situated in the first layer, the second layer, and the third layer.

A method and apparatus for receiving reduced voltage swing signals is disclosed. A first amplifier may generate a first intermediate signal based on a difference between voltage levels of a first and second input signals, and a second amplifier may generate a second intermediate signal based on a difference in the voltage levels between the second and first input signals. A regenerative amplifier may increase a difference in the voltage level of the first and second intermediate signals using regenerative feedback and the voltage levels of the first and second input signals. A latch circuit may generate first and second output signals using the first and second intermediate signals.

A standard voltage circuit includes an operational amplifier, first and second diodes, a resistance element, and a dummy leak generation circuit. The first diode is electrically connected to a first node of a first line which is disposed on an output terminal side of the operation amplifier and is electrically connected to a first input terminal of the operation amplifier through the first node. The second diode is electrically inserted connected to a second node of a second line which is disposed on the output terminal side of the operation amplifier and is electrically connected to a second input terminal of the operation amplifier through the second node. The resistance element is electrically connected to the second node in series with the second diode. The dummy leak generation circuit is electrically connected to one of the first line and the second line.

An integrated transformer is disclosed. The integrated transformer includes a magnetic core situated in a first layer from among multiple layers of a semiconductor layer stack, a first conductor and a second conductor from among multiple conductors, and a via. The first conductor is situated within a second layer, above the first layer, from among the multiple layers of the semiconductor layer stack. The second conductor is situated within a third layer, below the first layer, from among the multiple layers of the semiconductor layer stack. The via physically and electrically connects the first conductor and the second conductor. The via, the first conductor, and the second conductor form a primary winding of the integrated transformer. The integrated transformer additionally includes a secondary winding, wrapped around the magnetic core, situated in the first layer, the second layer, and the third layer.