Patent classifications
G06F30/367
Leakage analysis on semiconductor device
A method includes: identifying attributes that are associated with cell edges of abutted cells in a layout of a semiconductor device, wherein the attributes include at least one of terminal types of the cell edges; determining at least one minimal boundary leakage of the abutted cells based on the attributes, for adjustment of the layout of the semiconductor device. A system is also disclosed herein.
Parallel analog circuit optimization method based on genetic algorithm and machine learning
A parallel analog circuit automatic optimization method based on genetic algorithm and machine learning comprises global optimization based on genetic algorithm and local optimization based on machine learning, with the global optimization and the local optimization performed alternately. The global optimization based on genetic algorithm utilizes parallel SPICE simulations to improve the optimization efficiency while guaranteeing the optimization accuracy, combined with parallel computing. The local optimization based on machine learning establishes a machine learning model near the global optimal point obtained by the global optimization, and uses the machine learning model to replace the SPICE simulator, thus reducing the time costs brought by a large number of simulations.
Parallel analog circuit optimization method based on genetic algorithm and machine learning
A parallel analog circuit automatic optimization method based on genetic algorithm and machine learning comprises global optimization based on genetic algorithm and local optimization based on machine learning, with the global optimization and the local optimization performed alternately. The global optimization based on genetic algorithm utilizes parallel SPICE simulations to improve the optimization efficiency while guaranteeing the optimization accuracy, combined with parallel computing. The local optimization based on machine learning establishes a machine learning model near the global optimal point obtained by the global optimization, and uses the machine learning model to replace the SPICE simulator, thus reducing the time costs brought by a large number of simulations.
Generating simulation-friendly compact physical models for passive structures
A system and method for generating simulation-friendly compact physical models for passive structures is disclosed. The method includes generating an impedance map specifying impedances at a plurality of frequencies corresponding to one or more port-pairs of a circuit component using a processor to extract a plurality of impedance values between the one or more port-pairs based on a first value for each parameter of a plurality of parameters of the circuit component. The method includes generating a second circuit representation model based on updating the plurality of impedance values between the one or more port-pairs based on a second value for one or more parameters of the plurality of parameters of the circuit component, and updating the second circuit representation model by tuning the updated plurality of impedance values of the between the one or more port-pairs based on a predetermined use context of the circuit component in a circuit.
Generating simulation-friendly compact physical models for passive structures
A system and method for generating simulation-friendly compact physical models for passive structures is disclosed. The method includes generating an impedance map specifying impedances at a plurality of frequencies corresponding to one or more port-pairs of a circuit component using a processor to extract a plurality of impedance values between the one or more port-pairs based on a first value for each parameter of a plurality of parameters of the circuit component. The method includes generating a second circuit representation model based on updating the plurality of impedance values between the one or more port-pairs based on a second value for one or more parameters of the plurality of parameters of the circuit component, and updating the second circuit representation model by tuning the updated plurality of impedance values of the between the one or more port-pairs based on a predetermined use context of the circuit component in a circuit.
METHOD AND APPARATUS FOR GENERATING PROCESS SIMULATION MODELS
A method of generating a simulation model based on simulation data and measurement data of a target includes classifying weight parameters, included in a pre-learning model learned based on the simulation data, as a first weight group and a second weight group based on a degree of significance, retraining the first weight group of the pre-learning model based on the simulation data, and training the second weight group of a transfer learning model based on the measurement data, wherein the transfer learning model includes the first weight group of the pre-learning model retrained based on the simulation data.
CLOCK CIRCUIT, MEMORY AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE
A clock circuit includes at least two first driving circuits and a plurality of discrete first wires located between adjacent first driving circuits, the adjacent first driving circuits are connected through at least one first wire and at least two second wires, the first driving circuits are connected with the second wires, all of the first wires connected between two second wires are connected in series with each other, the first wires are located on a first metal layer, the second wires are located on a second metal layer, and the second metal layer is above the first metal layer.
CLOCK CIRCUIT, MEMORY AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE
A clock circuit includes at least two first driving circuits and a plurality of discrete first wires located between adjacent first driving circuits, the adjacent first driving circuits are connected through at least one first wire and at least two second wires, the first driving circuits are connected with the second wires, all of the first wires connected between two second wires are connected in series with each other, the first wires are located on a first metal layer, the second wires are located on a second metal layer, and the second metal layer is above the first metal layer.
FAST, HIGHLY ACCURATE, FULL-FEM SURFACE ACOUSTIC WAVE SIMULATION
The present disclosure provides systems and methods for scalable and parallel computation of hierarchical cascading in finite element method (FEM) simulations of surface acoustic wave (SAW) devices. Different computing units of a cluster or cloud service may be assigned to independently model different core blocks or combinations of core blocks for iterative cascading to generate a model of the SAW devices. Similarly, frequency ranges may independently be assigned to computing units for modeling and analysis of devices, drastically speeding up computation.
METHODS AND SYSTEMS TO DETERMINE PARASITICS FOR SEMICONDUCTOR OR FLAT PANEL DISPLAY FABRICATION
Some embodiments provide a method for calculating parasitic parameters for a pattern to be manufactured on an integrated circuit (IC) substrate. The method receives a definition of a wire structure as input. The method rasterizes the wire structure (e.g., produces pixel-based definition of the wire structure) to produce several images. Before rasterizing the wire structure, the method in some embodiments decomposes the wire structure into several components (e.g., several wires, wire segments or wire structure portions), which it then individually rasterizes. The method then uses the images as inputs to a neural network, which then calculates parasitic parameters associated with the wire structure. In some embodiments, the parasitic parameters include unwanted parasitic capacitance effects exerted on the wire structure. Conjunctively, or alternatively, these parameters include unwanted parasitic resistance and/or inductance effects on the wire structure.