Examples described herein provide a computer-implemented method that includes identifying, by a processing device, a victim/aggressor pair of nets for an integrated circuit. The method further includes severing nets of the victim/aggressor pair of nets. The method further includes swapping severed segments of the nets. The method further includes rerouting the nets subsequent to swapping the severed segments of the nets.

A method for curing antenna violations on an integrated circuit that includes multiple levels includes: obtaining a design of a circuit, the design including a first element connected to first device and a second element connected to one or more second devices, wherein the first and second elements both receive a common signal; determining that an antenna violation exists in on the first element at a first level of the multiple levels; and modifying the design of the circuit to add a connected between the first element and the second element at the first layer or at a layer below the first layer.

A method for curing antenna violations on an integrated circuit that includes multiple levels includes: obtaining a design of a circuit, the design including a first element connected to first device and a second element connected to one or more second devices, wherein the first and second elements both receive a common signal; determining that an antenna violation exists in on the first element at a first level of the multiple levels; and modifying the design of the circuit to add a connected between the first element and the second element at the first layer or at a layer below the first layer.

Provided is a simulation method performed by a process simulator, implemented with a recurrent neural network (RNN) including a plurality of process emulation cells, which are arranged in time series and configured to train and predict, based on a final target profile, a profile of each process step included in a semiconductor manufacturing process. The simulation method includes: receiving, at a first process emulation cell, a previous output profile provided at a previous process step, a target profile and process condition information of a current process step; and generating, at the first process emulation cell, a current output profile corresponding to the current process step, based on the target profile, the process condition information, and prior knowledge information, the prior knowledge information defining a time series causal relationship between the previous process step and the current process step.

Provided is a simulation method performed by a process simulator, implemented with a recurrent neural network (RNN) including a plurality of process emulation cells, which are arranged in time series and configured to train and predict, based on a final target profile, a profile of each process step included in a semiconductor manufacturing process. The simulation method includes: receiving, at a first process emulation cell, a previous output profile provided at a previous process step, a target profile and process condition information of a current process step; and generating, at the first process emulation cell, a current output profile corresponding to the current process step, based on the target profile, the process condition information, and prior knowledge information, the prior knowledge information defining a time series causal relationship between the previous process step and the current process step.

In a method of manufacturing a photo mask used in a semiconductor manufacturing process, a mask pattern layout in which a plurality of patterns are arranged is acquired. The plurality of patterns are converted into a graph having nodes and links. It is determined whether the nodes are colorable by N colors without causing adjacent nodes connected by a link to be colored by a same color, where N is an integer equal to or more than 3. When it is determined that the nodes are colorable by N colors, the nodes are colored with the N colors. The plurality of patterns are classified into N groups based on the N colored nodes. The N groups are assigned to N photo masks. N data sets for the N photo masks are output.

In a method of manufacturing a photo mask used in a semiconductor manufacturing process, a mask pattern layout in which a plurality of patterns are arranged is acquired. The plurality of patterns are converted into a graph having nodes and links. It is determined whether the nodes are colorable by N colors without causing adjacent nodes connected by a link to be colored by a same color, where N is an integer equal to or more than 3. When it is determined that the nodes are colorable by N colors, the nodes are colored with the N colors. The plurality of patterns are classified into N groups based on the N colored nodes. The N groups are assigned to N photo masks. N data sets for the N photo masks are output.

A system and method may determine the operating parameters, such as voltages, of MOS transistors within a circuit design by testing or simulation, for example and may identify a MOS transistor operating with its drain voltage higher than its gate voltage in the circuit. The design system and method may substitute a smaller transistor, having a high-k dielectric layer, for the original transistor in the circuit design.

An integrated device product having objects positioned in accordance with in-situ constraints. Said in-situ constraints comprise predetermined constraints and their local modifications. These local modifications, individually formulated for a specific pair of objects, account for on-the-spot conditions that influence the optimal positioning of the objects. The present invention improves the yield of integrated devices by adding local process modification distances to the predetermined constraints around processing hotspots thus adding extra safety margin to the device yield.

A method of designing a microwave filter using a computerized filter optimizer, comprises generating a filter circuit design in process (DIP) comprising a plurality of circuit elements having a plurality of resonant elements and one or more non-resonant elements, optimizing the DIP by inputting the DIP into the computerized filter optimizer, determining that one of the plurality of circuit elements in the DIP is insignificant, removing the one insignificant circuit element from the DIP, deriving a final filter circuit design from the DIP, and manufacturing the microwave filter based on the final filter circuit design.