A storage device includes a controller and nonvolatile memories. The controller receives write commands having virtual stream identifiers (IDs), receives discard commands having the virtual stream IDs, and determines a lifetime of write data to which each of the virtual stream IDs is assigned. The nonvolatile memories are accessed by the controller depending on physical stream IDs. The controller maps the virtual stream IDs and the physical stream IDs based on the lifetime of the write data.

A controller for controlling a nonvolatile memory device comprising: a read count table including a plurality of read count data, wherein each of the read count data includes a read count value for one data storage region; a read count address table including a read count address indicating an address of a memory region where the read count data is stored; a flash translation layer (FTL) configured to control an operation of the nonvolatile memory device, and manage the read count table and the read count address table; and a flash interface layer (FIL) configured to control data communication between the FTL and the nonvolatile memory device, and update the read count value based on the read count address when read operation is performed on the data storage region.

A memory sub-system periodically performs a first wear leveling operation using a direct mapping function on a data management unit of a memory component in the memory sub-system at a first frequency. The memory sub-system further periodically performs a second wear leveling operation using indirect mapping on a group of data management units of the memory component at a second frequency, wherein the second wear leveling operation is performed less frequently than the first wear leveling operation.

A data storage device includes a memory device and a controller coupled to the memory device. The data storage device supports zoned namespace. The controller is configured to maintain a zone timestamp table that includes a corresponding timestamp for each zone and add a timestamp to each garbage collection block of the memory device. The controller is further configured to scan a garbage collection block from a last physical block address (PBA) entry to a first PBA entry, determine a zone timestamp for the scanned PBA entry, and compare the zone timestamp to a timestamp of the garbage collection block. The controller is further configured to create and maintain a zone timestamp table and create and maintain a zone based defragmentation table.

Data employed in computations is processed so that during computations more of the data can be fit into or maintained in a smaller but higher speed memory than an original source of the data. More specifically, a sensitivity value is determined for various items of the data which reflect the number of bits in the data items that are not garbage bits, and only information in the data items that are indicated by the sensitivity value to not be garbage bits are necessarily effectively retained. At least the information that is not garbage bits and the corresponding associated sensitivity are packed together. The results of computations that are performed using the data items as at least one of the operands for the computation are associated with a sensitivity that is derived from the individual sensitivities of the operands used in the computation.

Systems and methods are disclosed including a processing device operatively coupled to memory device. The processing device performs operations comprising receiving a memory access command specifying a logical address; determining a physical address associated with the logical address; determining a portion of the memory device that is referenced by the physical address; determine an endurance factor associated with the portion; and increasing, by a value derived from the endurance factor, a media management metric associated with a management unit of the memory device, wherein the management unit is referenced by the physical address.

Technologies for scrambling functions in a column-addressable memory architecture includes a device having a memory and a circuitry. The memory includes a matrix storing individually addressable bit data, and the matrix is formed by rows and columns. The circuitry is to receive a request to perform a write operation of one or more bit values to one of the columns. The circuitry is further to determine a scrambler state at each location of the column, the location corresponding to a respective row and column index. The scrambler state is indicative of a function used to determine a value at the respective column location. Each of the bit values is scrambled as a function of the scrambler state for the respective column location and written thereto.

A storage system and method for automatic data phasing are disclosed. In one embodiment, a storage system is configured to receive, from a host, data to be written in the memory and an indication of an expected lifespan of the data; and determine whether to perform a garbage collection operation on the data based on the expected lifespan of the data. Other embodiments are provided.

A method for memory allocation may include determining an amount of use for a first memory page, wherein the first memory page is mapped to a first page group of a first group level, a second memory page may be mapped to a second page group of the first group level, and the first memory page and the second memory page may be mapped to a third page group of a second group level, and selecting, based on an allocation request, the first memory page based on the amount of use. The amount of use may include a first amount of use, and the method may further include determining a second amount of use for the second memory page, wherein the first memory page may be selected based on the first amount of use and the second amount of use.

Methods, systems, and devices for operating a memory device are described. One method includes caching data of a memory cell at a sense amplifier of a row buffer upon performing a first read of the memory cell; determining to perform at least a second read of the memory cell after performing the first read of the memory cell; and reading the data of the memory cell from the sense amplifier for at least the second read of the memory cell.