Patent classifications
G06F2212/2024
Vacuum blender
A vacuum blender having a vessel, a motor base containing a motor having a motor drive shaft, a blade holder having a blade with a blade shaft for engaging the motor drive shaft, and a fan connected to the motor drive shaft. The blender includes a conduit system for the passage of air from the vessel to an area in proximity to the fan before passing to the outside of the motor base. The conduit system is connected to a valve system, preferably including a three way valve or Venturi valve. The fan and blade are capable of being selectively actuated using a gear or clutch system, preferably operated by firmware. The invention is capable of evacuating air from the vessel before blending of the food contents occurs.
ELECTRONIC DEVICES HAVING SEMICONDUCTOR MAGNETIC MEMORY UNITS
A semiconductor device includes a resistance variable element including a free magnetic layer, a tunnel barrier layer and a pinned magnetic layer; and a magnetic correction layer disposed over the resistance variable element to be separated from the resistance variable element, and having a magnetization direction which is opposite to a magnetization direction of the pinned magnetic layer.
VACUUM BLENDER
A vacuum blender having a vessel, a motor base containing a motor having a motor drive shaft, a blade holder having a blade with a blade shaft for engaging the motor drive shaft, and a fan connected to the motor drive shaft. The blender includes a conduit system for the passage of air from the vessel to an area in proximity to the fan before passing to the outside of the motor base. The conduit system is connected to a valve system, preferably including a three way valve or Venturi valve. The fan and blade are capable of being selectively actuated using a gear or clutch system, preferably operated by firmware. The invention is capable of evacuating air from the vessel before blending of the food contents occurs.
Mapping processor address ranges to persistent storage
A computer apparatus and related method to access storage is provided. In one aspect, a controller maps an address range of a data block of storage into an accessible memory address range of at least one of a plurality of processors. In a further aspect, the controller ensures that copies of the data block cached in a plurality of memories by a plurality of processors are consistent.
MEMORY CHANNEL THAT SUPPORTS NEAR MEMORY AND FAR MEMORY ACCESS
A semiconductor chip comprising memory controller circuitry having interface circuitry to couple to a memory channel. The memory controller includes first logic circuitry to implement a first memory channel protocol on the memory channel. The first memory channel protocol is specific to a first volatile system memory technology. The interface also includes second logic circuitry to implement a second memory channel protocol on the memory channel. The second memory channel protocol is specific to a second non volatile system memory technology. The second memory channel protocol is a transactional protocol
Method and apparatus for erasing data in data section in flash memory
A data erasing method and apparatus applied to a flash memory. The method includes receiving a data erasing instruction, where the data erasing instruction instructs to erase data or at least one data section of data sections corresponding to data, when the data erasing instruction instructs to erase the data, searching for recorded storage addresses of all the data sections corresponding to the data, and erasing all the data sections corresponding to the data according to the storage addresses that are found; and when the data erasing instruction instructs to erase the at least one data section of the data sections corresponding to the data, searching for a recorded storage address of the at least one data section, and erasing the at least one data section according to the storage address that is found.
METHOD AND DEVICE TO REDUCE LEAKAGE AND DYNAMIC ENERGY CONSUMPTION IN HIGH-SPEED MEMORIES
A microcomputer comprising a microprocessor unit and a first memory unit is disclosed. In one aspect, the microprocessor unit comprises at least one functional unit and at least one register. Further, the at least one register is a wide register comprising a plurality of second memory units which are capable to each contain one word, the wide register being adapted so that the second memory units are simultaneously accessible by the first memory unit, and at least part of the second memory units are separately accessible by the at least one functional unit. Further, the first memory unit is an embedded non-volatile memory unit.
System for configuring partitions within non-volatile random access memory (NVRAM) as a replacement for traditional mass storage
A non-volatile random access memory (NVRAM) is used in a computer system to perform multiple roles in a platform storage hierarchy, specifically, to replace traditional mass storage that is accessible by an I/O. The computer system includes a processor to execute software and a memory coupled to the processor. At least a portion of the memory comprises a non-volatile random access memory (NVRAM) that is byte-rewritable and byte-erasable by the processor. The system further comprises a memory controller coupled to the NVRAM to perform a memory access operation to access the NVRAM in response to a request from the software for access to a mass storage.
ELECTRONIC DEVICE
An electronic device may be provided to include: first and second active regions arranged adjacent to each other in a second direction; a gate structure extended in the second direction; a first source region and a first drain region formed in the first active region; a second source region and a second drain region formed in the second active region; a source line contact formed over the first and second source regions and connected to the first and second source regions; a source line connected to the source line contact over the source line contact and extended in a first direction; first and second stacked structures formed over the first and second drain regions; and first and second bit lines formed over the first and second stacked structures, wherein the first and second bit lines are extended in the first direction.
Delayed write-back in memory
A memory having a delayed write-back to the array of data corresponding to a previously opened page allows delays associated with write-back operations to be avoided. After an initial activation opens a first page and the read/write operations for that page are complete, write-back of the open page to the array of memory cells is delayed until after completion of a subsequent activate operation that opens a new page. Techniques to force a write-back in the absence of another activate operation are also disclosed.