This technology provides an electronic device. An electronic device in accordance with an implementation of this document may include a semiconductor memory, and the semiconductor memory may include free layer having a variable magnetization direction; a tunnel barrier layer formed over the free layer; a pinned layer formed over the tunnel barrier layer and having a pinned magnetization direction; an exchange coupling layer formed over the pinned layer; and a magnetic correction layer formed over the exchange coupling layer, wherein the magnetic correction layer comprises a first magnetic layer, a spacer layer and a second magnetic layer that are sequentially stacked, and the first magnetic layer has a saturation magnetization smaller than a saturation magnetization of the second magnetic layer.

A memory access command, column address and plurality of write data values are received within an integrated-circuit memory chip via external signaling links. In response to the memory access command, the integrated-circuit memory chip (i) decodes the column address to select address-specified sense amplifiers from among a plurality of sense amplifiers that constitute a sense amplifier bank, (ii) reads first data, constituted by a plurality of read data values, out of the address-specified sense amplifiers, and (iii) overwrites the first data within the address-specified sense amplifiers with second data constituted by one or more of the write data values and by one or more of the read data values.

Provided is an electronic device. The electronic device according to an implementation of the disclosed technology includes a semiconductor memory, the semiconductor memory including: a substrate; an interlayer insulating layer formed over the substrate; a metal-containing insulating layer formed over the interlayer insulating layer and including a second metal; a contact hole formed through the interlayer insulating layer and the metal-containing insulating layer; a contact plug filling a portion of the contact hole; a contact pad formed over the contact plug so as to fill the remaining portion of the contact hole; and a variable resistance element formed over the contact pad, wherein the contact pad includes a metal-containing material including a first metal, and the second metal has a higher electron affinity than the first metal.

A method and system are disclosed. In one embodiment the method includes allocating several memory locations within a phase change memory and switch (PCMS) memory to be utilized as a Random Access Memory (RAM) Disk. The RAM Disk is created for use by a software application running in a computer system. The method also includes mapping at least a portion of the allocated amount of PCMS memory to the software application address space. Finally, the method also grants the software application direct access to at least a portion of the allocated amount of the PCMS memory.

A non-volatile random access memory (NVRAM) is used in a computer system to perform multiple roles in a platform storage hierarchy, specifically, to replace traditional mass storage that is accessible by an I/O. The computer system includes a processor to execute software and a memory coupled to the processor. At least a portion of the memory comprises a non-volatile random access memory (NVRAM) that is byte-rewritable and byte-erasable by the processor. The system further comprises a memory controller coupled to the NVRAM to perform a memory access operation to access the NVRAM in response to a request from the software for access to a mass storage.

Implementations of the disclosed technology provide an electronic device including a semiconductor memory and a method for fabricating the same, in which processes are easily performed and the characteristics of a variable resistance element are improved. An electronic device according to an implementation of the disclosed technology is an electronic device including a semiconductor memory, wherein the semiconductor memory includes: a substrate; a conductive contact plug formed over the first conductive layer and including a stack of a conductive low-resistance structure and a conductive planarizing layer; and a variable resistance pattern coupled to the contact plug, wherein the low-resistance structure comprises a diffusion barrier layer, a low-resistance material layer and a gap-fill layer.

Systems and methods are provided for supporting use of non-volatile memory (NVM) on a double data rate (DDR) memory channel for an information handling system so that non-volatile memory devices (e.g., such as Phase Change Memory PCM devices) may be employed for main memory usage. In one possible implementation, information handling system memory reads may be managed directly in hardware as memory semantics via use code, while memory writes may be separately handled, e.g., via an operating system (OS)/driver. In another possible implementation, both DRAM-based and NVM-based memory systems may be populated for an information handling system.

A method and/or system for providing for write once read many (WORM) times from at least some addresses of a storage drive that is otherwise manufactured for multiple writes to individual addresses. In at least one embodiment, a WORM area(s) is defined by a START_LBA and an END_LBA and the method uses a HWM_LBA to determine whether a LBA in the WORM area has been written to previously and to prevent previously written to LBA(s) in the WORM area from being rewritten. In at least one embodiment where there are multiple WORM areas, each WORM area has its own respective START_LBA, END_LBA and HWM_LBA.

An electronic device includes a first electrode, a second electrode spaced apart from the first electrode, a resistance variable element interposed between the first electrode and the second electrode, and a conductor arranged at least one of a first side and a second side of the resistance variable element to apply an electric field to the resistance variable element while being spaced apart from the resistance variable element, the first side facing the second side.

A semiconductor chip comprising memory controller circuitry having interface circuitry to couple to a memory channel. The memory controller includes first logic circuitry to implement a first memory channel protocol on the memory channel. The first memory channel protocol is specific to a first volatile system memory technology. The interface also includes second logic circuitry to implement a second memory channel protocol on the memory channel. The second memory channel protocol is specific to a second non volatile system memory technology. The second memory channel protocol is a transactional protocol.