Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage.

An electronic device including a semiconductor memory may be provided. The semiconductor memory may include a write circuit configured for generating a first current. The semiconductor memory may include a first selection circuit configured for coupling the first write circuit to a first line based on a first selection signal. The semiconductor memory may include a second write circuit configured for generating a second current. The semiconductor memory may include a second selection circuit configured for coupling the second write circuit to a second line based on a second selection signal. The semiconductor memory may include a memory cell coupled between the first line and the second line. The semiconductor memory may include a voltage control circuit configured for controlling a voltage level of the second line.

An apparatus is described. The apparatus includes main memory control logic circuitry comprising prefetch intelligence logic circuitry. The prefetch intelligence circuitry to determine, from a read result of a load instruction, an address for a dependent load that is dependent on the read result and direct a read request for the dependent load to a main memory to fetch the dependent load's data.

A system-on-chip includes a magnetic random access memory and a security interface. The magnetic random access memory includes a plurality of memory areas, each of the plurality of memory areas having a different security level. The security interface circuitry configured to: identify a memory area from among the plurality of memory areas based on a received memory address associated with a received memory command; determine a security level associated with the identified memory area; and perform a memory operation on received data based on the received memory command and the determined security level.

A system and method are described for integrating a memory and storage hierarchy including a non-volatile memory tier within a computer system. In one embodiment, PCMS memory devices are used as one tier in the hierarchy, sometimes referred to as far memory. Higher performance memory devices such as DRAM placed in front of the far memory and are used to mask some of the performance limitations of the far memory. These higher performance memory devices are referred to as near memory.

A RAID system and method based on a solid-state storage medium. The system includes a plurality of solid-state storage devices and a main control unit. Each solid-state storage device includes a solid-state storage medium and a controller for controlling reading and writing of the solid-state storage medium. The main control unit is electrically connected to the controller of each of the solid-state storage devices in a RAID array. The main control unit is used for performing address mapping from a logical block address in the RAID array to a physical block address of the flash memory solid-state storage device. The address mapping and the RAID function can be integrated to solve the problems of write amplification and low performance. The unified management of address mapping of the solid-state storage devices can be implemented to improve the efficiency of garbage collection and wear leveling of the solid-state storage system.

A memory having a delayed write-back to the array of data corresponding to a previously opened page allows delays associated with write-back operations to be avoided. After an initial activation opens a first page and the read/write operations for that page are complete, write-back of the open page to the array of memory cells is delayed until after completion of a subsequent activate operation that opens a new page. Techniques to force a write-back in the absence of another activate operation are also disclosed.

Various embodiments comprise apparatuses and methods including a method of reconfiguring partitions in a memory device as directed by a host. The method includes managing commands through a first interface controller to mapped portions of a first memory not having an attribute enhanced set, and mapping portions of a second memory having the attribute enhanced set through a second interface controller. Additional apparatuses and methods are described.

In certain aspects, one or more solid-state storage devices (SSDs) are provided that include a controller and non-volatile memory coupled to the controller. The non-volatile memory can include one or more portions configured as main memory or cache memory. When data stored in the main memory is written to the cache memory for processing, the data in the main memory is erased. In certain aspects, storage systems are provided that include one or more of such SSDs coupled to a host system. In certain aspects, methods are provided that include: receiving, by a first such SSD, a first command to write data to memory; determining that the data is stored in a main memory and is to be written to the cache memory for processing; writing the data to the cache memory; and erasing the data from the main memory.

A semiconductor chip comprising memory controller circuitry having interface circuitry to couple to a memory channel. The memory controller includes first logic circuitry to implement a first memory channel protocol on the memory channel. The first memory channel protocol is specific to a first volatile system memory technology. The interface also includes second logic circuitry to implement a second memory channel protocol on the memory channel. The second memory channel protocol is specific to a second non volatile system memory technology. The second memory channel protocol is a transactional protocol.