A read head is disclosed wherein a Spin Hall Effect (SHE) layer is formed on a free layer (FL) in a sensor and between the FL and top shield (S2). Preferably, the sensor has a seed layer, an AP2 reference layer, antiferromagnetic coupling layer, AP1 reference layer, and a tunnel barrier sequentially formed on a bottom shield (S1). In a three terminal configuration, a first current flows between S1 and S2 such that the AP1 reference layer produces a first spin torque on the FL, and a second current flows across the SHE layer thereby generating a second spin torque on the FL that opposes the first spin torque. When the stripe heights of the FL and SHE layer are equal, a two terminal configuration is employed where a current flows between one side of the SHE layer to a center portion thereof and then to S1, or vice versa.

A Z detection unit includes magnetoresistive elements provided on inclined side surfaces of Z detection recesses. An X detection unit includes magnetoresistive elements provided on inclined side surfaces of X detection recesses. A Y detection unit includes magnetoresistive elements provided on inclined side surfaces of Y detection recesses. Directions of fixed magnetization of fixed magnetic layers included in the magnetoresistive elements are set to directions shown by arrows with solid lines.

A Spin Hall Effect (SHE) assisted magnetic recording device is disclosed wherein a SHE layer and a conductor layer (CL) are formed between a main pole (MP) trailing side and a trailing shield (TS). When the SHE layer is a negative Spin Hall Angle (SHA) material, current (I.sub.a) flows from the SHE layer across the CL to a lead back to a source, or across the CL to one of the MP and TS. For a SHE layer with a positive SHA material, Ia flows from one of the MP or TS or from a lead across the CL to the SHE layer. Spin polarized current in the SHE layer applies spin transfer torque that tilts a local MP magnetization to a direction that enhances a MP write field, or that tilts a local TS magnetization to a direction that increases the TS return field and improves bit error rate.

A Spin Hall Effect (SHE) assisted magnetic recording device is disclosed wherein a SHE layer and a conductor layer (CL) are formed between a main pole (MP) trailing side and a trailing shield (TS). When the SHE layer is a negative Spin Hall Angle (SHA) material, current (I.sub.a) flows from the SHE layer across the CL to a lead back to a source, or across the CL to one of the MP and TS. For a SHE layer with a positive SHA material, Ia flows from one of the MP or TS or from a lead across the CL to the SHE layer. Spin polarized current in the SHE layer applies spin transfer torque that tilts a local MP magnetization to a direction that enhances a MP write field, or that tilts a local TS magnetization to a direction that increases the TS return field and improves bit error rate.

A magnetic recording head includes a trailing shield and a main pole. A trailing shield gap is between the trailing shield and the main pole. A spin orbital torque structure is within the trailing shield gap. The spin orbital torque structure includes a spin torque layer having a first side and a second side at a media facing surface. A first spin Hall layer is along the first side of the spin torque layer. A second spin Hall layer is along the second side of the spin torque layer. The first spin Hall layer comprises a heavy metal material having a positive spin Hall angle. The second spin Hall layer comprises a heavy metal material having a negative spin Hall angle.

A magnetic recording head includes a trailing shield and a main pole. A trailing shield gap is between the trailing shield and the main pole. A spin orbital torque structure is within the trailing shield gap. The spin orbital torque structure includes a spin torque layer having a first side and a second side at a media facing surface. A first spin Hall layer is along the first side of the spin torque layer. A second spin Hall layer is along the second side of the spin torque layer. The first spin Hall layer comprises a heavy metal material having a positive spin Hall angle. The second spin Hall layer comprises a heavy metal material having a negative spin Hall angle.

Methods, devices, and compositions for use with spintronic devices such as magnetic random access memory (MRAM) and spin-logic devices are provided. Methods include manipulating magnetization states in spintronic devices and making a structure using spin transfer torque to induce magnetization reversal. A device described herein manipulates magnetization states in spintronic devices and includes a non-magnetic metal to generate spin current based on the giant spin Hall effect, a ferromagnetic thin film with perpendicular magnetic anisotropy, an oxide thin film, and an integrated magnetic sensor. The device does not require an insertion layer between a non-magnetic metal with giant spin Hall effect and a ferromagnetic thin film to achieve perpendicular magnetic anisotropy.

Methods, devices, and compositions for use with spintronic devices such as magnetic random access memory (MRAM) and spin-logic devices are provided. Methods include manipulating magnetization states in spintronic devices and making a structure using spin transfer torque to induce magnetization reversal. A device described herein manipulates magnetization states in spintronic devices and includes a non-magnetic metal to generate spin current based on the giant spin Hall effect, a ferromagnetic thin film with perpendicular magnetic anisotropy, an oxide thin film, and an integrated magnetic sensor. The device does not require an insertion layer between a non-magnetic metal with giant spin Hall effect and a ferromagnetic thin film to achieve perpendicular magnetic anisotropy.

Embodiments of the present disclosure generally relate to a magnetic media drive employing a magnetic recording device. The magnetic recording device comprises a trailing gap disposed adjacent to a first surface of a main pole, a first side gap disposed adjacent to a second surface of the main pole, a second side gap disposed adjacent to a third surface of the main pole, and a leading gap disposed adjacent to a fourth surface of the main pole. A side shield surrounds the main pole and comprises a heavy metal first layer and a magnetic second layer. The first layer surrounds the first, second, and third surfaces of the main pole, or the second, third, and fourth surfaces of the main pole. The second layer surrounds the second and third surfaces of the main pole, and may further surround the fourth surface of the main pole.

A read head is disclosed wherein a Spin Hall Effect (SHE) layer is formed on a free layer (FL) in a sensor and between the FL and top shield (S2). Preferably, the sensor has a seed layer, an AP2 reference layer, antiferromagnetic coupling layer, AP1 reference layer, and a tunnel barrier sequentially formed on a bottom shield (S1). When the stripe heights of the FL and SHE layer are equal, a two terminal configuration is employed where a current flows between one side of the SHE layer to a center portion thereof and then to S1, or vice versa. As a result, a second spin torque is generated by the SHE layer on the FL that opposes a first spin torque from the AP1 reference layer on the FL.