Disclosed herein is an apparatus that includes a first buffer circuit, a plurality of first driver circuits configured to drive the first buffer circuit, and a plurality of first switch circuits configured to supply an operation voltage to the first driver circuits, respectively. The first driver circuits are collectively arranged in a first region in a matrix, and the first switch circuits are collectively arranged in a second region different from the first region.

A memory is provided that is configured to practice both a conventional normal read operation and also a burst mode read operation. During the normal read operation, the memory pre-charges the bit lines in a group of multiplexed columns. Each column has a sense amplifier that latches a bit decision for the column during the normal read operation. If a subsequent read operation addresses the same group of multiplexed columns, the memory invokes the burst-mode read operation during which the bit lines are not pre-charged.

A semiconductor device includes a mode control circuit, a write control circuit and an internal data generation circuit. The mode control circuit activates a pattern input mode according to a logic level combination of a chip selection signal, configured to activate a command/address signal to generate an operation set signal from the command/address signal. The mode control circuit generates a mode control signal, which is enabled by the operation set signal, according to a logic level combination of the chip selection signal and the command/address signal, in a write mode after the pattern input mode is activated. The write control circuit generates a write enablement signal, which is enabled according to a logic level of the mode control signal. The internal data generation circuit generates internal data to be stored into a core circuit according to the write enablement signal.

Embodiments include apparatuses, methods, and systems to implement a multi-read and/or multi-write process with a set of memory cells. The set of memory cells may be multiplexed with a same sense amplifier. As part of a multi-read process, a memory controller coupled to a memory circuit may precharge the bit lines associated with the set of memory cells, provide a single assertion of a word line signal on the word line, and then sequentially read data from the set of memory cells (using the sense amplifier) based on the precharge and the single assertion of the word line signal. Additionally, or alternatively, a multi-write process may be performed to sequentially write data to the set of memory cells based on one precharge of the associated bit lines. Other embodiments may be described and claimed.

A memory is provided that is configured to practice both a conventional normal read operation and also a burst mode read operation. During the normal read operation, the memory pre-charges the bit lines in a group of multiplexed columns. Each column has a sense amplifier that latches a bit decision for the column during the normal read operation. If a subsequent read operation addresses the same group of multiplexed columns, the memory invokes the burst-mode read operation during which the bit lines are not pre-charged.

Aspects of the invention include decoding a base address and an offset to generate a first potential memory address and a second potential memory address. A first cell data associated with the first potential memory address of a first partitioned array and a second cell data associated with a second partitioned array are evaluated. Carry-out bit information is received from a summing operation of the base address and the offset, the operating being performed in parallel to the decoding. The carry-out bit information is used to select either the first cell data or the second cell data.

A semiconductor device includes a burst control circuit configured to generate burst information depending on a logic level of a setting bit when an operation setting signal is inputted and configured to generate a burst control signal from the burst information in the case where a read signal is inputted. The semiconductor device also includes a data processing circuit configured to output output data by performing first and second burst operations for internal data, depending on a logic level of the burst control signal.

Disclosed herein is an apparatus that includes a rust buffer circuit, a plurality of first driver circuits configured to drive the first buffer circuit, and a plurality of first switch circuits configured to supply an operation voltage to the first driver circuits, respectively. The first driver circuits are collectively arranged in a first region in a matrix, and the first switch circuits are collectively arranged in a second region different from the first region.

A circuit includes a serializer configured to receive a non-serialized input signal having a first bit-width and generate a plurality of serialized input signals each having a second bit-width. A memory array is configured to receive each of the plurality of serialized input signals. The memory array is further configured to generate a plurality of serialized output signals. A de-serializer is configured to receive the plurality of serialized output signals and generate a non-serialized output signal. The plurality of serialized output signals each have a bit-width equal to second bit-width and the non-serialized output signal has a bit-width equal to the first bit-width.

A memory is provided that is configured to practice both a conventional normal read operation and also a burst mode read operation. During the normal read operation, the memory pre-charges the bit lines in a group of multiplexed columns. Each column has a sense amplifier that latches a bit decision for the column during the normal read operation. If a subsequent read operation addresses the same group of multiplexed columns, the memory invokes the burst-mode read operation during which the bit lines are not pre-charged.