A memory system in accordance with an embodiment of the inventive concept includes a memory controller comprising a controller optical transmission unit photoelectrically-converting a data signal to output a first optical modulation signal and a second optical modulation signal, a first memory device which is optically connected with the memory controller to receive the first optical modulation signal, and a second memory device which is optically connected with the memory controller to receive the second optical modulation signal. The first optical modulation signal and the second optical modulation signal are complementary to each other.

In a modular memory system, a memory control component, first and second memory sockets and data buffer components are all mounted to the printed circuit board. The first and second memory sockets have electrical contacts to electrically engage counterpart electrical contacts of memory modules to be inserted therein, and each of the data buffer components includes a primary data interface electrically coupled to the memory control component, and first and second secondary data interfaces electrically coupled to subsets of the electrical contacts within the first and second memory sockets, respectively.

Systems and methods for an optical ternary content addressable memory (TCAM) are provided. The optical TCAM implements a time-division multiplexing (TDM) based encoding scheme to encode each bit position of a search word in the time domain. Each bit position is associated with at least two time slots. The encoded optical signal comprising the search word is routed through one or more modulators configured to represent a respective TCAM stored word. If a mismatch between at least one bit position of the search word and at least one TCAM stored word occurs, a photodetector or photodetector array will detect light.

A memory device is described. The memory device comprises a plurality of stacked memory layers, wherein each of the plurality of stacked memory layers comprises a plurality of memory cells. The memory device further comprises an optical die bonded to the plurality of stacked memory layers and in electrical communication with the stacked memory layers through one or more interconnects. The optical die comprises an optical transceiver, and a memory controller configured to control read and/or write operations of the stacked memory layers. The optical die may be positioned at one end of the plurality of stacked memory layers. The one or more interconnects may comprise one or more through silicon vias (TSV). The plurality of memory cells may comprise a plurality of solid state memory cells. The memory devices described herein can enable all-to-all, point-to-multipoint and ring architectures for connecting logic units with memory devices.

A computer memory system includes an electro-optical chip, an electrical fanout chip electrically connected to an electrical interface of the electro-optical chip, and at least one dual in-line memory module (DIMM) slot electrically connected to the electrical fanout chip. A photonic interface of the electro-optical chip is optically connected to an optical link. The electro-optical chip includes at least one optical macro that converts outgoing electrical data signals into outgoing optical data signals for transmission through the optical link. The optical macro also converts incoming optical data signals from the optical link into incoming electrical data signals and transmits the incoming electrical data signals to the electrical fanout chip. The electrical fanout chip directs bi-directional electrical data communication between the electro-optical chip and a dynamic random access memory (DRAM) DIMM corresponding to the at least one DIMM slot.

The present invention discloses a wordline driver circuit for a random-access memory (RAM), which can reduce leakage during power down mode. The circuit includes a pre-driver stage on header and footer. The pre-driver stage includes a strap buffer defining a header and comprising a first switch connecting a first set of wordlines to a first voltage. The pre-driver stage includes an input-output buffer defining a footer and comprising a second switch connecting a second set of wordlines to a second voltage. In the pre-driver stage, the strap buffer further includes a third switch connecting the second set of wordlines to the first voltage and a fourth switch connecting the first set of wordlines to the second voltage.

A computer memory system includes an electro-optical chip, an electrical fanout chip electrically connected to an electrical interface of the electro-optical chip, and at least one dual in-line memory module (DIMM) slot electrically connected to the electrical fanout chip. A photonic interface of the electro-optical chip is optically connected to an optical link. The electro-optical chip includes at least one optical macro that converts outgoing electrical data signals into outgoing optical data signals for transmission through the optical link. The optical macro also converts incoming optical data signals from the optical link into incoming electrical data signals and transmits the incoming electrical data signals to the electrical fanout chip. The electrical fanout chip directs bi-directional electrical data communication between the electro-optical chip and a dynamic random access memory (DRAM) DIMM corresponding to the at least one DIMM slot.

Programming a multilevel cell (MLC) nonvolatile (NV) media can be performed with internal buffer reuse to reduce the need for external buffering. The internal buffer is on the same die as the NV media to be programmed, along with a volatile memory to store data to program. The internal buffer is to read and program data for the NV media. Programming of the NV media includes staging first partial pages in the buffer for program, reading second partial pages from the NV media to the volatile memory, storing second partial pages in the buffer, and programming the NV media with the first partial pages and the second partial pages.

Systems and methods for an optical ternary content addressable memory (TCAM) are provided. The optical TCAM implements a time-division multiplexing (TDM) based encoding scheme to encode each bit position of a search word in the time domain. Each bit position is associated with at least two time slots. The encoded optical signal comprising the search word is routed through one or more modulators configured to represent a respective TCAM stored word. If a mismatch between at least one bit position of the search word and at least one TCAM stored word occurs, a photodetector or photodetector array will detect light.

In a modular memory system, a memory control component, first and second memory sockets and data buffer components are all mounted to the printed circuit board. The first and second memory sockets have electrical contacts to electrically engage counterpart electrical contacts of memory modules to be inserted therein, and each of the data buffer components includes a primary data interface electrically coupled to the memory control component, and first and second secondary data interfaces electrically coupled to subsets of the electrical contacts within the first and second memory sockets, respectively.