Patent classifications
G
PHYSICS
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G11
INFORMATION STORAGE
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G11C
STATIC STORES
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11/00
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
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G11C11/06
using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element
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G11C11/067
using elements with single aperture or magnetic loop for storage, one element per bit, and for non-destructive read-out
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G11C11/067

Magnetic memory element and magnetic memory
09705073 · 2017-07-11 · ·

According to one embodiment, a magnetic memory element includes a first magnetic unit, a second magnetic unit, a nonmagnetic unit, and a controller. The second magnetic unit includes a first portion and a second portion. The first portion includes a first region and a second region. The controller performs a first operation and a second operation. In the first operation, the controller changes a direction of a magnetization of the first region by causing a first current to flow through the first portion in a first current direction. The first current has a first current value. In the second operation, the controller changes a direction of a magnetization of the second region by causing a second current to flow through the first portion in a second current direction. The second current has a second current value. The second current value is less than the first current value.

Magnetic memory element and magnetic memory
09705073 · 2017-07-11 · ·

According to one embodiment, a magnetic memory element includes a first magnetic unit, a second magnetic unit, a nonmagnetic unit, and a controller. The second magnetic unit includes a first portion and a second portion. The first portion includes a first region and a second region. The controller performs a first operation and a second operation. In the first operation, the controller changes a direction of a magnetization of the first region by causing a first current to flow through the first portion in a first current direction. The first current has a first current value. In the second operation, the controller changes a direction of a magnetization of the second region by causing a second current to flow through the first portion in a second current direction. The second current has a second current value. The second current value is less than the first current value.

MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY
20170069829 · 2017-03-09 ·

According to one embodiment, a magnetic memory element includes a first magnetic unit, a second magnetic unit, a nonmagnetic unit, and a controller. The second magnetic unit includes a first portion and a second portion. The first portion includes a first region and a second region. The controller performs a first operation and a second operation. In the first operation, the controller changes a direction of a magnetization of the first region by causing a first current to flow through the first portion in a first current direction. The first current has a first current value. In the second operation, the controller changes a direction of a magnetization of the second region by causing a second current to flow through the first portion in a second current direction. The second current has a second current value. The second current value is less than the first current value.