A magnetic domain wall displacement element includes a first ferromagnetic layer, a second ferromagnetic layer extending in a second direction and magnetically recordable, a nonmagnetic layer, and a first conductive part having a first intermediate layer and a second conductive part having a second intermediate layer, in which the first intermediate layer is sandwiched between first and second magnetization regions and exhibiting first and second magnetization directions, the second intermediate layer is sandwiched between a third magnetization region and exhibiting the second magnetization direction and a fourth magnetization region exhibiting the first magnetization direction in the first direction, and an area of the first magnetization region is larger than an area of the second magnetization region and an area of the third magnetization region is smaller than an area of the fourth magnetization region in a cross section in the first direction and the second direction.

An electronic device includes a semiconductor memory, wherein the semiconductor memory includes: a variable resistance element having a stacked structure of a first magnetic layer, a tunnel barrier layer, and a second magnetic layer; and a protection layer including a pillar-shaped magnetic compensation layer and a non-magnetic layer, which are formed on the sidewall of the variable resistance element.

An electronic device includes a semiconductor memory, wherein the semiconductor memory includes: a variable resistance element having a stacked structure of a first magnetic layer, a tunnel barrier layer, and a second magnetic layer; and a protection layer including a pillar-shaped magnetic compensation layer and a non-magnetic layer, which are formed on the sidewall of the variable resistance element.

Voltage controlled magnetic components are described. The magnetic components include a thin layer of ferromagnet adjacent to an oxide layer. The magnetic properties of the ferromagnet may be controlled in a reversible manner via application of an external electric field and voltage-induced reversible oxidation of the ferromagnet.

Voltage controlled magnetic components are described. The magnetic components include a thin layer of ferromagnet adjacent to an oxide layer. The magnetic properties of the ferromagnet may be controlled in a reversible manner via application of an external electric field and voltage-induced reversible oxidation of the ferromagnet.

A memory device includes a first line coupled to a first terminal of a first memory cell, a second bit line coupled to a first terminal of a second memory cell, a sense amplifier coupled to a second end of the first bit line and a second end of the second bit line, a capacitor including a first terminal coupled to a first input of the sense amplifier and a second terminal coupled to a switch. The switch couples the second terminal of the capacitor to the second bit line during a calibration phase of a read operation and to the first bit line during a sense phase of the read operation. A current/voltage source drives current on the first bit line while the second line is floating during the calibration phase, and drives current on the second bit line while the first bit line is floating during the sense phase.

A memory device includes a first line coupled to a first terminal of a first memory cell, a second bit line coupled to a first terminal of a second memory cell, a sense amplifier coupled to a second end of the first bit line and a second end of the second bit line, a capacitor including a first terminal coupled to a first input of the sense amplifier and a second terminal coupled to a switch. The switch couples the second terminal of the capacitor to the second bit line during a calibration phase of a read operation and to the first bit line during a sense phase of the read operation. A current/voltage source drives current on the first bit line while the second line is floating during the calibration phase, and drives current on the second bit line while the first bit line is floating during the sense phase.

In order to stably write data into a magnetic memory that uses in-plane current-induced perpendicular switching of magnetization to write data, the magnetic memory includes a recording layer formed as a perpendicular magnetization film, an adjacent layer joined to an upper surface or a lower surface of the recording layer, an external magnetic field application part configured to apply a first external magnetic field to the recording layer in a first direction which is an in-plane direction of the recording layer, and a current application part configured to allow a write current to flow through the adjacent layer in the first direction or a second direction which is opposite to the first direction. The external magnetic field application part is configured to switch a direction of a second external magnetic field applied in a direction perpendicular to the first direction in accordance with a direction of the write current.

In order to stably write data into a magnetic memory that uses in-plane current-induced perpendicular switching of magnetization to write data, the magnetic memory includes a recording layer formed as a perpendicular magnetization film, an adjacent layer joined to an upper surface or a lower surface of the recording layer, an external magnetic field application part configured to apply a first external magnetic field to the recording layer in a first direction which is an in-plane direction of the recording layer, and a current application part configured to allow a write current to flow through the adjacent layer in the first direction or a second direction which is opposite to the first direction. The external magnetic field application part is configured to switch a direction of a second external magnetic field applied in a direction perpendicular to the first direction in accordance with a direction of the write current.

A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.