A sensor element for storing rotation or position information includes a substrate and a domain wall conductor arranged on the substrate. A course of the domain wall conductor is of a closed circumferential, continuous configuration without crossings. The domain wall conductor comprises a first region having a positive curvature and a second region having a negative curvature.

A method of forming a memory device having magnetic tracks individually comprising a plurality of magnetic domains having domain walls, includes forming an elevationally outer substrate material of uniform chemical composition. The uniform composition material is partially etched into to form alternating regions of elevational depressions and elevational protrusions in the uniform composition material. A plurality of magnetic tracks is formed over and which angle relative to the alternating regions. Interfaces of immediately adjacent of the regions individually form a domain wall pinning site in individual of the magnetic tracks. Other methods, including memory devices independent of method, are disclosed.

A magnetic storage device of an embodiment includes: a first magnetic part including a first portion and a second portion and extending in a first direction from the first portion to the second portion; a layered part which is stacked on the first magnetic part in a second direction intersecting with the first direction; a first electrode electrically connected with the first portion; and a second electrode electrically connected with the second portion. The layered part includes a first layer and a second layer which is disposed between the first layer and the first magnetic part, the second layer includes a metal oxide, and the first layer includes at least one selected from the group consisting of a metal nitride and a metal carbide.

According to one embodiment, a shift register memory includes blocks and a control circuit. The blocks each includes data storing shift strings. Each of the data storing shift strings includes layers. The control circuit performs storing and reading data by shifting one layer of the layers, in a direction along each of the data storing shift strings. The reading includes reading data from a first layer of the layers. The storing includes storing data to a second layer of the layers. The control circuit reads first data stored in one or more third layers of the layers, the one or more third layers being successive from the first layer, determines a shift parameter in accordance with the reading of the first data, and performs the reading using the determined shift parameter.

A magnetic recording array includes: a plurality of domain wall moving elements; a first wiring which is electrically connected to a reference potential and is electrically connected to at least one domain wall moving element of the plurality of domain wall moving elements; a second wiring which is electrically connected to at least two or more domain wall moving elements of the plurality of domain wall moving elements; a first switching element which is connected between each of the domain wall moving elements and the first wiring; and a second switching element which is connected between each of the domain wall moving elements and the second wiring, wherein an OFF resistance of the first switching element is smaller than an OFF resistance of the second switching element.

A magnetic memory according to an embodiment includes: a magnetic member including a first to third magnetic parts, the first magnetic part including a first portion and a second portion and extending in a first direction from the first portion to the second portion, the second magnetic part extending in a second direction that crosses the first direction, and the third magnetic part connecting the second magnetic part and the first portion; a first nonmagnetic metal layer arranged along the third magnetic part, the first nonmagnetic metal layer including a first end portion on a side of the second portion, a position of the first end portion along the first direction being between positions of the first and second portions along the first direction; and a first and second electrodes supplying a current between the first and second magnetic parts via the third magnetic part.

A magnetic memory according to an embodiment includes: a magnetic member having a cylindrical form, the magnetic member including a first end portion and a second end portion and extending in a first direction from the first end portion to the second end portion, the first end portion having an end face, which includes a face inclined with respect to a plane perpendicular to the first direction.

A magnetic storage device of an embodiment includes: a first magnetic part including a first portion and a second portion and extending in a first direction from the first portion to the second portion; a layered part which is stacked on the first magnetic part in a second direction intersecting with the first direction; a first electrode electrically connected with the first portion; and a second electrode electrically connected with the second portion. The layered part includes a first layer and a second layer which is disposed between the first layer and the first magnetic part, the second layer includes a metal oxide, and the first layer includes at least one selected from the group consisting of a metal nitride and a metal carbide.

According to one embodiment, a magnetic memory puts a first magnetic domain having a magnetization direction which is the same as or opposite to a magnetic domain of a first layer of a magnetic memory line, into the first layer, based on a value of data and the magnetization direction of the first layer. When receiving a first command, the magnetic memory puts a first additional magnetic domain and a second additional magnetic domain having a magnetization direction opposite to the first additional magnetic domain into the magnetic memory line. When receiving a second command, the magnetic memory read the first and second additional magnetic domains to determine the magnetization direction of the first magnetic domain.

A magnetic domain wall movement type magnetic recording element includes: a first ferromagnetic layer which includes a ferromagnetic body; a non-magnetic layer which faces the first ferromagnetic layer; and a magnetic recording layer which faces a surface of the non-magnetic layer on a side opposite to the first ferromagnetic layer and extends in a first direction. The magnetic recording layer has a concave-convex structure on a second surface opposite to a first surface which faces the non-magnetic layer.