A data driving circuit may include a trigger circuit and a pre-driver. The trigger circuit may be configured to block a remaining signal path among a plurality of signal paths for transmitting data except for a signal path corresponding to a currently selected driving strength. The pre-driver may be configured to drive data, which are transmitted through the signal path corresponding to the currently selected driving strength, using an impedance determined in accordance with a plurality of impedance control codes.

Methods, systems, and devices are described for adjusting parameters of channel drivers based on temperature when a calibration component is unavailable. A memory device may determine whether a calibration component is available for use by the memory device. If not, the memory device may select an impedance setting for the driver that is based on an operating temperature of the memory device. A device or system may identify a temperature of a memory device, identify that a calibration component is unavailable to adjust a parameter of a driver of a data channel, select a value of the parameter based on the temperature and on identifying that the calibration component is unavailable, adjust the parameter of the driver of the data channel to the selected value, and transmit, by the driver operating using the selected value of the parameter, a signal over the channel.

A method for improving the stability of a resistive change cell is disclosed. The stability of a resistive change memory cell-that is, the tendency of the resistive change memory cell to retain its programmed resistive state-may, in certain applications, be compromised if the cell is programmed into an unstable or metastable state. In such applications, a programming method using bursts of sub-pulses within a pulse train is used to drive the resistive change cell material into a stable state during the programming operation, reducing resistance drift over time within the cell.

A semiconductor device includes a first die connected to a first channel, the first die comprising a first memory chip; and a second die connected to a second channel, the second die comprising a second memory chip, the first and second channels being independent of each other and a storage capacity and a physical size of the second die being the same as those of the first die. The first and second dies are disposed in one package, and the package includes an interconnection circuit disposed between the first die and the second die to transfer signals between the first memory chip and the second memory chip.

An electronic device including a semiconductor memory. The semiconductor memory may include a cell array including a plurality of resistive storage cells; a current code generation block suitable for generating a current code which has a value corresponding to an average value of current amounts of test currents respectively flowing through at least two first resistive storage cells among the plurality of resistive storage cells, in a test operation; and a sensing block suitable for comparing a read current flowing through a second resistive storage cell selected among the plurality of resistive storage cells with a reference current, and thereby sensing data of the second resistive storage cell, wherein the semiconductor memory is operable to adjust a current amount of at least one current flowing through the sensing block based on the value of the current code.

A resistance of configurable termination circuitry located at an interface between a memory component and a processing device is adjusted. The configurable termination circuitry includes a plurality of transistors, a plurality of switches coupled to the plurality of transistors, and a plurality of resistors coupled to the plurality of switches. The resistance of the configurable termination circuitry is adjusted based on a mode of the configurable termination circuitry.

A data input buffer includes a plurality of buffer units configured to receive a first impedance calibration code and a second impedance calibration code, wherein each of the plurality of buffer units outputs an offset detected with a first input terminal and a second input terminal thereof short-circuited, as write data, and wherein a buffer unit corresponding to a current value of the first impedance calibration code among the plurality of buffer units is configured to correct the offset according to the second impedance calibration code.

An electrical device (e.g., an integrated circuit) includes an amplifier, a configurable common mode gain trim circuit, and a memory. The configurable common mode gain trim circuit is coupled to the amplifier. The memory is configured to include trim data that is usable during an initialization process for the electrical device to configure the impedance matching circuit.

A nonvolatile memory device includes a first memory structure. The first memory structure includes first through N-th memory dies that may be connected to an external memory controller via a first channel. N is a natural number equal to or greater than two. At least one of the first through N-th memory dies is configured to be used as a first representative die that performs an on-die termination (ODT) operation while a data write operation is performed for one of the first through N-th memory dies.

Systems, apparatus and methods are provided for multi-drop multi-load NAND interface topology where a number of NAND flash devices share a common data bus with a NAND controller. A method for controlling on-die termination in a non-volatile storage device may comprise receiving a chip enable signal on a chip enable signal line from a controller, receiving an on-die termination (ODT) command on a data bus from the controller while the chip enable signal is on, decoding the on-die termination command and applying termination resistor (RTT) settings in the ODT command to a selected non-volatile storage unit at the non-volatile storage device to enable ODT for the selected non-volatile storage unit.