Methods, systems, and devices for timing signal calibration for a memory device are described. In some memory devices, operations for accessing memory cells may be performed with timing that is asynchronous with an input signal. To support asynchronous timing, a timing signal generation component of a memory device may include delay components that support generating a timing signal having aspects that are delayed relative to an input signal. Delay components may have characteristics that are sensitive to fabrication or operational variability, such that timing signals may also be affected by such variability. In accordance with examples as disclosed herein, a memory device may include delay components, associated with access operation timing signal generation, that are configured to be selectively enabled or disabled based on a calibration operation of the memory device, which may improve an ability of the memory device to account for various sources of timing signal variability.

There are provided a memory device for supporting a command bus training (CBT) mode and a method of operating the same. The memory device is configured to enter a CBT mode or exit from the CBT mode in response to a logic level of a first data signal, which is not included in second data signals, which are in one-to-one correspondence with command/address signals, which are used to output a CBT pattern in the CBT mode. The memory device is further configured to change a reference voltage value in accordance with a second reference voltage setting code received by terminals associated with the second data signals, to terminate the command/address signals or a pair of data clock signals to a resistance value corresponding to an on-die termination (ODT) code setting stored in a mode register, and to turn off ODT of data signals in the CBT mode.

Disclosed is a memory device including an error logic unit suitable for determining whether an error is present in command signals to generate a command error signal; a replica delay circuit suitable for replicating a delay value of the error logic unit and generating an input strobe signal by delaying a strobe signal of the command signals; an output strobe signal generation circuit suitable for generating an output strobe signal activated after a command error latency elapses from a time point at which the command signals are received; and a pipe circuit suitable for receiving and storing the command error signal in response to the input strobe signal and outputting the stored command error signal in response to the output strobe signal.

Disclosed herein is an apparatus that includes a first group including a plurality of first latch circuits coupled in series and a second group including a plurality of second latch circuits coupled in series. Each of the first latch circuits performs a latch operation in synchronization with a rise trigger signal. Each of the second latch circuits performs a latch operation in synchronization with a fall trigger signal. The rise and fall trigger signals are alternately activated every even clock cycles or every odd clock cycles. In response to a division ratio, first one or more of the first and second latch circuits are bypassed and second one or more of the first and second latch circuits are cyclically coupled.

Embodiments herein relate to systems, apparatuses, or processes directed to facilitating increased clock speeds on a substrate by lowering the impedance of traces that provide clock signals to components such as DRAM. For example, embodiments may include a substrate with a first layer and a second layer parallel to the first layer with a first trace coupled with the first layer in a routing configuration and a second trace coupled with the second layer in the routing configuration, where the routing configuration of the first trace and the second trace substantially overlap each other with respect to an axis perpendicular to the first layer and the second layer, and where the first trace and the second trace are electrically coupled by a first and a second electrical coupling perpendicular to the first layer and the second layer.

Methods for improving timing in memory devices are disclosed. A method may include sampling a command signal according to a clock signal to obtain standard-timing commands. The method may also include sampling the command signal according to an adjusted clock signal to obtain time-adjusted commands. The method may also include comparing the standard-timing commands and the time-adjusted commands. The method may also include determining an improved timing for the clock signal based on the comparison of the standard-timing commands and the time-adjusted commands. The method may also include adjusting the clock signal based on the improved timing. Associated systems and methods are also disclosed.

A storage device including: a non-volatile memory device including at least one memory die, wherein the at least one memory die includes a plurality of memory regions, each region inputting and outputting a first data signal and a second data signal; and a memory controller including an eye open monitoring (EOM) circuit configured to perform a first EOM operation of generating first EOM information based on the first data signal and a second EOM operation of generating second EOM information based on of the second data signal of at least one of the regions, and configured to compare the second EOM information with the first EOM information, and control the at least one memory die based on a result of the comparison of the first EOM information and the second EOM information.

A memory system of a high-speed operation can be realized by reducing an influence of reflection signals etc. caused by branching and impedance mismatching in various wirings between a memory controller and a memory module, and an influence due to transmission delays of data, command/address, and clocks in the memory module. To this end, a memory system comprises a memory controller and a memory module mounted with DRAMs. A buffer is mounted on the memory module. The buffer and the memory controller are connected to each other via data wiring, command/address wiring, and clock wiring. The DRAMs and the buffer on the memory module are connected to each other via internal data wiring, internal command/address wiring, and internal cock wiring. The data wiring, the command/address wiring, and the clock wiring may be connected to buffers of other memory modules in cascade. Between the DRAMs and the buffer on the memory module, high-speed data transmission is implemented using data phase signals synchronous with clocks.

A semiconductor IC device comprises a timing circuit to transfer a timing signal, the timing circuit being configured to receive a first test signal and to effect a delay in the timing signal in response to the first test signal, the first test signal including a first timing event. The semiconductor IC device further comprises an interface circuit configured to transfer the data signal in response to the timing signal, the interface circuit being further configured to receive a second test signal and to effect a delay in the data signal in response to the second test signal, the second test signal including a second timing event that is related to the first timing event according to a test criterion.

A storage device includes a nonvolatile memory device, and a controller that reads first data from the nonvolatile memory device. When a number of first errors of the first data is not smaller than a first threshold value, the controller determines whether the first errors include timing errors arising from a variation of signal transmission timings between the nonvolatile memory device and the controller and performs a retraining operation on the signal transmission timings when the first errors include the timing errors.