A data retention reliability screen of integrated circuits including ferroelectric random access memory (FRAM) arrays. Sampled groups of cells in the FRAM array are tested at various reference voltage levels, after programming to a high polarization capacitance data state and a relaxation time at an elevated temperature. Fail bit counts of the sample groups at the various reference voltage levels are used to derive a test reference voltage, against which all of the FRAM cells in the integrated circuit are then tested after preconditioning (i.e., programming) and another relaxation interval at the elevated temperature, to determine those cells in the integrated circuit that are vulnerable to long-term data retention failure.

Methods, systems, and devices for imprint recovery for memory cells are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.

The present application relates to a testing method for a packaged chip, a testing system for a packaged chip, a computer device and a storage medium. The method includes following steps: acquiring a target chip; in the post-burn-in test process, testing a first data retention time of each memory unit on the target chip; comparing the first data retention time of each memory unit with a preset reference time; and, determining that the target chip is a qualified chip if the first data retention time of each memory unit is not less than the preset reference time. In the present application, by testing the first data retention time of each memory unit on the target chip in the post-burn-in test process, it is determined that the target chip is a qualified chip if the first data retention time of each memory unit is not less than the preset reference time, and subsequent testing will be performed continuously. Moreover, since the products satisfying the requirements can be screened out in the bum-in test process, compared with the prior art, the test cost is reduced, and the test efficiency is improved.

A semiconductor device including an SRAM capable of sensing a defective memory cell that does not satisfy desired characteristics is provided. The semiconductor device includes a memory cell, a bit line pair being coupled to the memory cell and having a voltage changed towards a power-supply voltage and a ground voltage in accordance with data of the memory cell in a read mode, and a specifying circuit for specifying a bit line out of the bit line pair. In the semiconductor device, a wiring capacitance is coupled to the bit line specified by the specifying circuit and a voltage of the specified bit line is set to a voltage between a power voltage and a ground voltage in a test mode.

A semiconductor memory device includes: a plurality of memory blocks; a plurality of bit-line sense amplifiers shared by neighboring memory blocks among the plurality of the memory blocks, and suitable for sensing and amplifying data read from memory cells coupled to activated word lines through bit lines, and outputting the amplified data through a plurality of segment data lines; a word line driver suitable for activating word lines of memory blocks that do not share the bit-line sense amplifiers during a test mode; and a weak cell detection circuit suitable for compressing the amplified data transferred through the plurality of the segment data lines for generating compressed data and detecting a weak cell based on the compressed data during the test mode.

A semiconductor device, semiconductor system, and or method relating to a refresh operation may be provided. The semiconductor device may include an operation control signal generation circuit configured for generating an operation control signal for a target word line. The semiconductor device may include a copy operation circuit configured for performing a first copy operation of storing data of first cells coupled to an adjacent word line adjacent to the target word line, in second cells coupled to a first clone word line, based on the operation control signal.

Systems and methods for correcting data errors in memory caused by high-temperature processing of the memory are provided. An integrated circuit (IC) die including a memory is formed. Addresses of memory locations that are susceptible to data loss when subjected to elevated temperatures are determined. Bits of data are written to the memory, where the bits of data include a set of bits written to the memory locations. The set of bits are written to a storage device of the IC die that is not susceptible to data loss when subjected to the elevated temperatures, the subset of bits comprise compressed code. At least one of the bits stored at the addresses is overwritten after subjecting the IC die to an elevated temperature. The at least one of the bits is overwritten based on the set of bits written to the storage device.

A refresh time detection circuit and a semiconductor device including the same may be provided. The refresh time detection circuit may include a code generator configured to generate a code signal for detecting a refresh time. The refresh time detection circuit may include a latch circuit configured to generate a latch signal by latching the code signal according to a fail signal, and generate a pre-code signal and a post-code signal by latching each latch signal according to a pre-enable signal and a post-enable signal. The refresh time detection circuit may include a subtractor configured to output a refresh detection signal by performing subtraction between the pre-code signal and the post-code signal. The refresh time detection circuit may include a comparator configured to generate a detection signal by comparing the refresh detection signal with an offset signal based on the post-enable signal.

A method for predicting high-temperature operating life of an integrated circuit (IC) includes performing bias temperature instability tests and high-temperature operating life tests on a device of the IC, establishing a relationship between the device bias temperature instability and the IC's high-temperature operating life based on a result of the bias temperature instability tests and the high-temperature operating life tests. The method further includes providing a lot of subsequent integrated circuits (ICs), performing wafer-level bias temperature instability tests on a device of the ICs, and predicting high-temperature operating life of the ICs based on a result of the wafer-level bias temperature instability tests and based on the established relationship between the device's bias temperature instability and the IC's high-temperature operating life. The method can save significant effort and time over conventional approaches for accurate prediction of high-temperature operating life of an IC.

An information handling system includes a processor that runs a maximum memory stress test of a memory module with a refresh rate of memory devices set to a first refresh rate. Then, the processor may receive a power consumption of the memory module. Also, the processor may receive the temperature of the memory devices, and may set the refresh rate to a second refresh rate. The processor may continuously receive both the power consumption of the memory module and the temperature of the memory devices. Based on the continuously received temperature, the processor may determine whether the temperature of the memory devices exceeds a second threshold temperature. If so, the processor may store a first setting as a refresh setting for the memory module. Otherwise, the processor may store a second setting as the refresh setting for the memory module.