A semiconductor chip may include a memory, a power supply line, a noise generator and a switch. The power supply line may include first and second power supply line portions. The power supply line may be configured to provide a power supply signal through each of the first power supply line portion and the second power supply line portion. The noise generator may be connected to the second power supply line portion. The noise generator may be configured to receive the power supply signal from the second power supply line portion, and output a noisy power supply signal based on the power supply signal. The switch may be coupled to the memory, the first power supply line portion, and the noise generator. The switch may be configured to selectively electrically connect the memory to one of the first power supply line portion and the noise generator.

Disclosed is a physical unclonable function generator circuit and method. In one embodiment, a physical unclonable function (PUF) generator comprising: a plurality of PUF cells, wherein each of the plurality of PUF cells comprises a first MOS transistor and a second MOS transistor, wherein terminal S of the first MOS transistor is connected to terminal D of the second MOS transistor at a dynamic node, terminal D of the first MOS transistor is coupled to a first bus and terminal G of the first NMOS transistor is coupled to a second bus, and terminals S and G of the second NMOS transistor are coupled to ground; a plurality of dynamic flip-flop (DFF) circuits wherein each of the plurality of DFF circuits is coupled to each of the plurality of PUF cells respectively; a population count circuit coupled to the plurality of DFF circuits; and an evaluation logic circuit having an input coupled to the population count circuit and an output coupled to the plurality of DFF circuits.

A health check manager may detect a trigger for a capacitor health check for a memory sub-system. The health check manager may determine a number of write commands in a set of one or more pending commands for a memory die of the memory sub-system and set a start time for the capacitor health check based on the number of write commands in the set of one or more pending commands. In some cases, the health check manager may perform the capacitor health check in accordance with the start time.

A predefined data pattern is written using a plurality of values of a memory access parameter. A corresponding value of a data state metric associated with each value of a plurality of values of the memory access operation parameter is measured. An optimal value of the memory access operation parameter is selected from the plurality of values of the memory access operation parameter.

A memory device, and an operating method of the memory device and a host device are provided. The method of operating a memory device includes receiving a command for requesting an Eye Open Monitor (EOM) operation performance from a host device, receiving pattern data including data and non-data from the host device, performing the EOM operation which performs an error count to correspond to the data, and does not perform the error count on the non-data, and transmitting an EOM response signal including the error count result to the host device.

An integrated circuit includes an input/output (I/O) circuit configured to receive a first signal and a second signal and a fault detection circuit. The I/O circuit includes an I/O terminal, an I/O buffer, and a pull resistor having a first terminal coupled to the I/O terminal. The fault detection circuit is configured to determine whether a predetermined number of toggles of the first signal occurs while the second signal is held at a constant logic state, assert a fault indicator when the predetermined number of toggles occurs, and negate the fault indicator when the predetermined number of toggles does not occur.

A lockstep testing system includes a lockstep controller that generates various control signals. The lockstep testing system further includes various lockstep circuitries, with each lockstep circuitry including primary and redundant functional circuits that are operable in a lockstep mode, and a fault injection circuit that receives a control signal from the lockstep controller and injects a transient fault in the corresponding lockstep circuitry. The transient fault can be injected at one of input and output stages of the primary and redundant functional circuits. Each lockstep circuitry further includes a checker circuit that tests whether the corresponding lockstep circuitry is faulty (i.e., whether the injected fault is accurately detected), and generates and provides, to the lockstep controller, a fault indication signal indicating whether the corresponding lockstep circuitry is faulty.

A physical unclonable function (PUF)-based method for enhancing system reliability is provided, including: requesting, by a client, data transmission with a server; randomly selecting, by the server, a plurality of metal oxide semiconductor (MOS) devices in an MOS array, and acquiring positional information of the plurality of MOS devices; calculating, by the server, a probabilistic PUF that the trap in each of the plurality of MOS devices is occupied by a carrier and constructing a probabilistic model; randomly generating, by the server, detection time according to the probabilistic model and sending the detection time and the positional information to the client; and determining, by the server, an occupancy probability of the trap in each of the plurality of MOS devices at the detection time according to the probabilistic model, and generating a theoretical code key.

Methods, systems, and devices for performing quick precharge command sequences are described. An operating mode that is associated with a command sequence having a reduced duration relative to another operating mode may be configured at a memory device. The operating mode may be configured based on determining that a procedure does not attempt to preserve or is independent of preserving a logic state of accessed memory cells, among other conditions. While operating in the mode, the memory device may perform a received precharge command using a first set of operations having a first duration—rather than a second set of operations having a second set of operations having a second, longer duration—to perform the received precharge command. The first set of operations may also use less current or introduce less disturbance into the memory device relative to the second set of operations.

Systems, apparatus and methods are provided for selecting a performance profile for a storage system. A method may include: generating a set of performance profiles for a non-volatile storage system, performing a thermal calibration by running a first test under a first performance profile and a second test under a second performance profile, obtaining a first maximum temperature under the first performance profile and a second maximum temperature under the second performance profile, selecting an optimal performance profile from the set of performance profiles based on comparing the first maximum temperature and the second maximum temperature to a predetermined threshold value and operating the non-volatile storage system under the optimal performance profile. Each of the set of performance profiles may include settings for hardware components of the non-volatile storage system.