A variety of applications can include a system having a system platform to which a memory system can be attached for operation of the system. With the memory system removed from the system platform or before being attached to the system platform, an interposer can be connected at the location for the memory system on the system platform to facilitate testing of the system with respect to the memory system. The interposer can include a set of electrical connectors embedded on a first side of the interposer to connect to the system platform and a connector embedded on a second side of the interposer opposite the first side, where the connector allows coupling to an external platform to convey signals between the system platform and the external platform. Additional apparatus, systems, and methods are disclosed.

A variety of applications can include a system having a system platform to which a memory system can be attached for operation of the system. With the memory system removed from the system platform or before being attached to the system platform, an interposer can be connected at the location for the memory system on the system platform to facilitate testing of the system with respect to the memory system. The interposer can include a set of electrical connectors embedded on a first side of the interposer to connect to the system platform and a connector embedded on a second side of the interposer opposite the first side, where the connector allows coupling to an external platform to convey signals between the system platform and the external platform. Additional apparatus, systems, and methods are disclosed.

This application discloses a memory device to retain stored data when receiving a voltage supply having at least a retention voltage level. The retention voltage level varies based on a supply voltage and a temperature of an environment around the memory device. A sensitive circuit can adjust the voltage supply received by the memory device based on the supply voltage and the temperature. The sensitive circuit can alter a memory bias supply voltage for the memory device to adjust the voltage supply towards the retention voltage level. The sensitive circuit can include a temperature dependent circuit to generate a bias voltage based on the supply voltage and the temperature, and an adjustment circuit to alter the memory bias supply voltage based on the bias voltage. The adjustment circuit also can include high temperature circuitry to adjust the memory bias supply voltage based on a leakage current from the memory device.

Programmable resistive memory can be fabricated with a non-single-crystalline silicon formed on a flexible substrate. The non-single-crystalline silicon can be amorphous silicon, low-temperature polysilicon (LTPS), organic semiconductor, or metal oxide semiconductor. The flexible substrate can be glass, plastics, paper, metal, paper, or any kinds of flexible film. The programmable resistive memory can be PCRAM, RRAM, MRAM, or OTP. The OTP element can be a silicon, polysilicon, organic or metal oxide electrode. The selector in a programmable resistive memory can be a MOS or diode with top gate, bottom gate, inverted, staggered, or coplanar structures.

Aspects of the present disclosure relate to techniques for identifying susceptibility to induced charge leakage. In examples, a susceptibility test sequence comprising a cache line flush instruction is used to repeatedly activate a row of a memory unit. The susceptibility test sequence causes induced charge leakage within rows that are physically adjacent to the activated row, such that a physical adjacency map can be generated. In other examples, a physical adjacency map is used to identify a set of adjacent rows to a target row. A susceptibility test sequence is used to repeatedly activate the set of adjacent rows, after which the content of the target row is analyzed to determine whether the any bits of the target row flipped as a result of induced charge leakage. If flipped bits are not identified, an indication is generated that the memory unit is not susceptible to induced charge leakage.

A semiconductor device test system and a semiconductor device test method are provided. The system includes a device under test (DUT) which provides an output voltage to a load connected to an output terminal, automatic test equipment (ATE) which supplies power to the DUT and measures the output voltage of the DUT, and a current mirror which is connected between the ATE and the DUT. The ATE outputs a reference current to the current mirror, and the DUT provides an output current to the current mirror. The output current is obtained by mirroring the reference current from the ATE.

A deterioration detection device includes a storage including a first current path and a second current path and configured such that a current is applied to the first current path and the second current path, a storage input control unit configured to compare an internal operating condition of a memory device with a target condition in a first operating mode and to select one of the first current path and the second current path of the storage based on a result of the comparison, and an output unit configured to output an output signal indicated deterioration, accumulated in one of the first current path and the second current path, in a second operating mode.

Testing circuitry and methods are disclosed for use with analog neural memory in deep learning artificial neural networks. The analog neural memory comprises one or more arrays of non-volatile memory cells. The testing circuitry and methods can be utilized during sort tests, qualification tests, and other tests to verify programming operations of one or more cells.

Testing circuitry and methods are disclosed for use with analog neural memory in deep learning artificial neural networks. The analog neural memory comprises one or more arrays of non-volatile memory cells. The testing circuitry and methods can be utilized during sort tests, qualification tests, and other tests to verify programming operations of one or more cells.

A chip testing method for being implemented by a chip testing system includes: a chip mounting step implemented by using a chip mounting apparatus to respectively dispose a plurality of chips onto electrical connection sockets of a chip testing device; a moving-in step implemented by transferring the chip testing device carrying the chips into one of accommodating chambers of an environment control apparatus; a temperature adjusting step implemented by controlling a temperature adjusting device of the one of the accommodating chambers so that the chips are in an environment having a predetermined temperature; and a testing step implemented by providing electricity to the chip testing device, so that each testing module of the chip testing device performs a predetermined testing process on the chips on the corresponding electrical connection sockets connected thereto.