Addresses of accessed word lines are stored. Data related to victim word lines associated with the accessed word line are also stored. The victim word lines may have data stored in relation to multiple accessed word lines. The data related to the victim word lines is adjusted when the victim word line is refreshed during a targeted refresh operation or an auto-refresh operation. The data related to the victim word lines is adjusted when the victim word line is accessed during a memory access operation.

Apparatuses and methods for targeted row refreshes are disclosed herein. In an example apparatus, a predecoder receives a target row address and determines whether a target row of memory associated with the target row address is a primary or a redundant row of memory. The predecoder is further configured to cause one or more rows of memory physically adjacent the primary row of memory to be refreshed if the primary row is the target row or one or more rows of memory physically adjacent the redundant row of memory to be refreshed if the redundant row of memory is the target row of memory.

Aspects include performing validation of a soft post-package repair (sPPR) function of a memory device by writing a first pattern to a first target row of a bank group of the memory device, executing the sPPR function on the first target row to change a mapping of the first target row to a spare row and divert a subsequent memory access request targeting the first target row to the spare row. A second pattern is written to the first target row. The sPPR function is executed on a second target row of the bank group to change a mapping of the second target row to the spare row and restore the mapping of the first target row. The first target row is read to confirm the first pattern. The second target row is read to confirm the second pattern and remapping of the second target row to the spare row.

A memory system includes a memory device including a memory cell array including a plurality of memory cell groups, and a controller for selectively activating or inactivating one of the memory cell groups.

Methods, systems and computer program products for providing access to a spare memory array element (MAE) are provided. Aspects include storing a row number a column number associated with a defective MAE of a plurality of MAEs. The plurality of MAEs are logically arranged in a plurality of rows and a plurality of columns. Aspects also include receiving a command to access a cache line. The cache line corresponds to a selected row of MAEs of the plurality of MAEs. Responsive to determining that the selected row matches the row number that is associated with the defective MAE, aspects include activating one or more column shifters to prevent access to the defective MAE and provide access to a spare MAE when accessing the cache line. The activation of the one of more column shifters is based on the column number that is associated with the defective MAE.

A semiconductor device includes a cell array having an upper segment and a lower segment which are classified according to refresh units. The semiconductor device includes a first repair controller configured to output a first repair signal for controlling a repair operation of the upper segment based on a fuse address, a row address, a second control signal, and selection address being at a first level, and generate a first control signal for controlling a repair operation of the lower segment based on the fuse address, the row address, and selection address.

A data storage device can detect for a failure in decoding of an x-bit row address and/or a y-bit column of an (x+y)-bit address. The data storage device decodes the x-bit row address and/or the y-bit column address to provide wordlines (WLs) and/or bitlines (BLs) to access one or more cells from among a memory array of the data storage device. The data storage device compares one or more subsets of the WLs and/or of the BLs to each other to detect for the failure. The data storage device determines the failure is present in the decoding of the x-bit row address and/or the y-bit column of the (x+y)-bit address when one or more WL and/or BL from among the one or more subsets of the WLs and/or the BLs differ.

A semiconductor memory device includes: first to N.sup.th memory banks each including a normal cell region coupled to normal word lines and a redundant cell region coupled to redundant word lines; first to N.sup.th non-volatile memories that correspond to the first to N.sup.th memory banks, respectively, each including a plurality of memory sets for programming repair addresses of the corresponding memory banks; a refresh control circuit for generating first to N.sup.th count values by counting a number of the memory sets used in the first to N.sup.th non-volatile memories, and generating a redundant reset signal based on the first to N.sup.th count values; and an address generation circuit for sequentially generating normal addresses for selecting the normal word lines and redundant addresses for selecting the redundant word lines based on a refresh signal, and initializing the redundant addresses based on the redundant reset signal.

An apparatus includes a first word line, a second word line and a control. The second word line is contiguous to the first word line. The control circuit includes a first defective address storing circuit and a first detection circuit. The first defective address storing circuit stores first enable information along with first defective address. The first enable information indicates whether or not the second word line is functional. The first detection circuit provides a first signal when the first word line is accessed. The first signal indicates whether or not the second word line is functional. The control circuit activates the second word line when the first signal indicates that the second word line is functional and does not activate the second word line when the first signal indicates that the second word line is not functional.

A memory controller includes a controller input/output circuit configured to output a first command to read first data, and output a second command to read an error corrected portion of the first data. A memory device includes: an error detector, a data storage circuit and an error correction circuit. The error detector is configured to detect a number of error bits in data read from a memory cell in response to a first command. The data storage circuit is configured to store the read data if the detected number of error bits is greater than or equal to a first threshold value. The error correction circuit is configured to correct the stored data.