A semiconductor memory device comprises a memory cell array including segments disposed at corresponding intersections of row and column blocks, each row block including dynamic memory cells coupled to word-lines and bit-lines, a row decoder that activates a first word-line of a first row block in response to a row address, determines whether the first row block is a master block based on a first fuse information and a second row block is mapped as a slave to the master block, activates a second word-line of the second row block, and outputs a row block information signal, and a column decoder accessing a portion of first memory cells coupled to the first word-line or a portion of second memory cells coupled to the second word-line based on a column address, the row block information signal and a second fuse information.

Memory devices are disclosed. A memory device may include a number of fuses and a number of transmit lines configured to transmit data from the number of fuses. The memory device may also include a number of monitoring circuits. Each monitoring circuit of the number of monitoring circuits is coupled to a transmit line of the number of transmit lines. Each monitoring circuit comprises logic configured to receive the data from the number fuses via the transmit line. The logic is further configured to generate a result responsive to the data and indicative of pass/fail status of the transmit line. Associated methods and systems are also disclosed.

A memory device includes at least one first register, a memory circuit, an analyzing circuit, and a control circuit. The memory circuit includes a plurality of bit cells. The analyzing circuit is configured to perform an analyzing process on the bit cells to generate an analyzing result. If the analyzing result indicates that a first bit cell of the bit cells fails, the control circuit establishes a repair process by controlling data to be written into the at least one first register and controlling the data to be read out from the at least one first register.

The repair circuit is disposed in a memory including a normal memory area and a redundant memory area including a target repair unit immediately adjacent to the normal memory area, and the repair circuit being configured to control the target repair unit to repair an abnormal memory cell in the normal memory area. The repair circuit includes: a first control circuit, configured to receive signals at a target number of bits from low to high in a row address, process the received signals to obtain a control result, and output the control result, where the target number is associated with a number of Word Lines in the target repair unit; and a repair determination circuitry, connected to an output terminal of the first control circuit, and configured to receive the control result and output, in combination with the control result, a repair signal indicating whether to perform a repair operation.

Provided are standby circuit dispatch method, apparatus, device and medium. The method includes: a first test item is executed and first test data is acquired, the first test data including position data of a failure bit acquired during execution of the first test item; a first redundant circuit dispatch result is determined according to the first test data; a second test item is executed and second test data is acquired; when the failure bit acquired during execution of the second test item includes a failure bit outside the repair range of the dispatched regional redundant circuits and dispatched global redundant circuits, and the dispatchable redundant circuits have been dispatched out, a maximum target bit umber is acquired according to the first test data and the second test data; and a target dispatch mode is selected and a second redundant circuit dispatch result is determined according to the target dispatch mode.

A memory device with built-in flexible redundancy is provided according to various aspects of the present disclosure. In certain aspects, a memory device includes a first sense amplifier, a second sense amplifier, a first comparator, a second comparator, a reference circuit, and a logic gate. During a redundant read operation, the first sense amplifier, the first comparator, and the reference circuit are used to read one copy of a redundant bit stored in the memory device, and the second sense amplifier, the second comparator, and the reference circuit are used to read another copy of the redundant bit stored in the memory device. The logic gate may then determine a bit value based on the bit values of the read copies of the redundant bit (e.g., determine a bit value of one if the bit value of at least one of the read copies of the redundant bit is one).

A method for operating a memory includes: receiving an active command and a row address; confirming that a portion of columns of a first row corresponding to the row address is replaced with a portion of columns of a second row; activating the first row and the second row; confirming activation of a random pulse; randomly selecting one among the row address corresponding to the first row and a row address corresponding to the second row in response to the activation of the random pulse; and sampling the selected row address as a sampling address.

A dynamic fault clustering method and apparatus for efficiently managing redundancy in semiconductor memories performs a collection operation of searching for and detecting a fault and an operation of appropriately clustering the fault at the same time, which reduces an amount of time spent performing Built-In Redundancy Analysis (BIRA).

Provided are a Fail Bit (FB) repair solution determination method and device, which are applied to a chip including multiple subdomains. The chip further includes Redundancy (RD) circuits, and the RD circuits are configured to repair FBs in the subdomains. The method includes that: after one or more available RD circuits are determined for a target FB presently to be repaired in a subdomain, a reliability value of each available RD circuit is acquired from an RD circuit reliability list, the RD circuit reliability list including reliability values of multiple RD circuits, and a repair solution for the target FB in the subdomain is determined according to the reliability value of the available RD circuit. The reliability value of the RD circuit is obtained by performing big data analysis on relationships between generated FBs and RD circuits where NFBs are located in the RD circuits.

Disclosed herein is an apparatus that includes first register circuits configured to store a first address, and a comparing circuit configured to compare the first address with a second address. The comparing circuit includes first and second circuit sections. In a first operation mode, the comparing circuit is configured to activate a match signal when the first circuit section detects that the first bit group of the first address matches with the third bit group of the second address and the second circuit section detects that the second bit group of the first address matches with the fourth bit group of the second address. In a second operation mode, the comparing circuit is configured to activate the match signal when the first circuit section detects that the first bit group matches with the third bit group regardless of the second and fourth bit groups.