The present disclosure in the field of memory technology proposes a programmable storage cell, a programmable storage array and a reading and writing method for the programmable storage array. The programmable storage cell includes: a first anti-fuse element connected between a first power terminal and an output terminal, a second anti-fuse element connected between the second power terminal and the output terminal, and a third switch unit connected to the output terminal, a third power terminal and a position signal terminal, where the third switch unit responds to the signal from the position signal terminal so as to connect the third power terminal and the output terminal. The programmable storage cell has a simple structure and a high reading speed.

A system includes a memory device having a plurality of memory dies and at least a first spare memory die and a processing device coupled to the memory device. The processing device is to perform operations including: tracking a value of a write counter representing a number of write operations performed at the plurality of memory dies; activating the first spare memory die in response to detecting a failure of a first memory die of the plurality of memory dies; storing an offset value of the write counter in response to activating the first spare memory die; and commanding the memory device to modify die trim settings of the first spare memory die at predetermined check point values of the write counter that are offset from the offset value.

Systems and methods for repairing a memory. A method includes performing a repair analysis of the embedded memories to produce repair information. The method includes storing the repair information in the registers, where the registers are organized into groups having chains of identical length. The method includes performing collision detection between the repair information in each of the groups. The method includes merging the repair information in each of the groups. The method includes repairing the embedded memories using the merged repair information.

A determination that a programming operation has been performed on a memory cell can be made. An amount of time that has elapsed since the programming operation has been performed on the memory cell can be identified. A determination as to whether the amount of time that has elapsed satisfies a threshold time condition can be made. In response to determining that the amount of time that has elapsed satisfies the threshold time condition an operation can be performed on the memory cell to change or maintain a voltage condition of the memory cell.

The present embodiments provides a memory repair solution finding device and method which find a fault by testing a memory and find a repair solution in parallel and dynamically reconfigure the stored fault information to minimize a repair solution searching time with an optimal repair rate.

A system includes a memory device with multiple memory dies and at least a spare memory die. A processing device is coupled to the memory device. The processing device is to track a value of a write counter representing a number of write operations performed at the multiple memory dies. The processing device is to activate the spare memory die in response to detection of a failure of a first memory die of the multiple memory dies. The processing device is to store an offset value of the write counter in response to the detection of the activation of the spare memory die, the offset value representing the value of the write counter upon activation of the first spare memory die.

Methods, systems, and devices for modifying subsets of memory bank operating parameters are described. First global trimming information may be configured to adjust a first subset of operating parameters for a set of memory banks within a memory system. Second global trimming information may be configured to adjust a second subset of operating parameters for the set of memory banks. Local trimming information may be used to adjust one of the subsets of the operating parameters for a subset of the memory banks. To adjust one of the subsets of the operating parameters, the local trimming information may be combined with one of the first or second global trimming information to yield additional local trimming information that is used to adjust a corresponding subset of the operating parameters at the subset of the memory banks.

A memory device includes: a plurality of channels, each including a memory cell array, the memory cell array including a normal cell array, the normal cell array including normal memory cells, and each of the normal memory cells being a volatile memory cell; a testing control circuit, configured to control testing of the normal cell array in the plurality of channels in response to a testing instruction, and to determine an access address of a normal memory cell failing the testing in the normal cell array in the plurality of channels to be a failure address; and a non-volatile memory cell array which includes a plurality of non-volatile memory cells and is configured to receive and store the failure address from the testing control circuit.

Methods, systems, and devices for modifying subsets of memory bank operating parameters are described. First global trimming information may be configured to adjust a first subset of operating parameters for a set of memory banks within a memory system. Second global trimming information may be configured to adjust a second subset of operating parameters for the set of memory banks. Local trimming information may be used to adjust one of the subsets of the operating parameters for a subset of the memory banks. To adjust one of the subsets of the operating parameters, the local trimming information may be combined with one of the first or second global trimming information to yield additional local trimming information that is used to adjust a corresponding subset of the operating parameters at the subset of the memory banks.

Runtime memory cell row defect detection and replacement includes detecting in a memory of a computer system operating in a runtime operating system mode, a defective row of memory cells having at least one defective cell. In response to the detection of the defective row, interrupting the operating system of the computer system and, in a runtime system maintenance mode, replacing the defective row of memory cells with a spare row of memory cells as a replacement row of memory cells. Execution of the operating system is then resumed in the runtime operating system mode Other aspects and advantages are described.