Disclosed in some examples are NAND devices, firmware, systems, methods, and devices that apply smart algorithms to process ECC errors by taking advantage of excess overprovisioning. In some examples, when the amount of overprovisioned blocks are above a predetermined threshold, a first ECC block error handling mode may be implemented and when the overprovisioned blocks are equal or less than the predetermined threshold, a second mode of ECC block error handling may be utilized.

A three-dimensional stacked integrated circuit (3D SIC) that can have at least a first 3D XPoint (3DXP) die and, in some examples, can have at least a second 3DXP die too. In such examples, the first 3DXP die and the second 3DXP die can be stacked. The 3D SIC can be partitioned into a plurality of columns that are perpendicular to each of the stacked dies. In such examples, when a first column of the plurality of columns is determined as failing, data stored in the first column can be replicated to a second column of the plurality of columns. Also, for example, when a part of a first column of the plurality of columns is determined as failing, data stored in the part of the first column can be replicated to a corresponding part of a second column of the plurality of columns.

Apparatuses, systems, and methods to perform continuous read operations are described. A system configured to perform such continuous read operations enables improved access to and processing of data for performance of associated functions. For instance, one apparatus described herein includes a memory device having an array that includes a plurality of pages of memory cells. The memory device includes a page buffer coupled to the array and a continuous read buffer. The continuous read buffer includes a first cache to receive a first segment of data values and a second cache to receive a second segment of the data values from the page buffer. The memory device is configured to perform a continuous read operation on the first and second segments of data from the first cache and the second cache of the continuous read buffer.

A semiconductor memory apparatus includes a plurality of memory dies and a logic die, which are stacked to each other. The logic die includes a memory interface for a memory apparatus to be coupled to the semiconductor memory apparatus, and a switch coupled to a plurality of channels included in a control device which controls the semiconductor memory apparatus. The switch includes a first switch element which couples one of the plurality of channels to the memory interface or one of the plurality of memory dies, and a second switch element which couples another one of the plurality of channels to another one of the plurality of memory dies. Even if some memory dies are defective, the semiconductor memory apparatus is capable to operate.

A memory system includes a memory device; a short super block detecting unit suitable for forming, when one or more initial bad blocks remain in an original super block after a re-mapping operation is performed and a number of the initial bad blocks is equal to or less than a predetermined threshold value within the original super block, a short super block with memory blocks included in the original super block; a bitmap generating unit suitable for generating a bitmap representing whether each of the memory blocks included in the short super block is a normal block or an initial bad block; and a processor suitable for controlling the memory device to simultaneously perform a normal operation on normal blocks among the memory blocks included in the short super block based on the bitmap.

Disclosed are a memory device and an operating method thereof, and the memory device includes a plurality of first data lines, a plurality of second data lines, a common redundant memory region coupled to at least one repair line of the second data lines, a plurality of normal memory regions coupled to the first data lines in common, and coupled in common to the remaining the second data lines excluding the repair line, and a repair circuit coupled to the first and second data lines, and suitable for replacing at least one defective memory cell in the normal memory regions with at least one redundant memory cell in the common redundant memory region by shifting some or all of the first data lines to some or all of the second data lines, based on a row address, a column address and a region address.

Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to monitor degradations in word line characteristics. The memory device may generate a reference signal in response to an access command directed to a memory array including a plurality of word lines, in some embodiments. The memory array may include a victim word line configured to accumulate adverse effects of executing multiple access commands at the word lines of the memory array. When the degradation in the word line characteristics causes reliability issues (e.g., corrupted data), the memory array is deemed unreliable, and may be blocked from memory operations. The memory device may compare the reference signal and a signal from the victim word line to determine whether preventive measures may be appropriate to avoid (or mitigate) such reliability issues.

A memory repair circuit, a memory repair method and a memory module using the memory repair circuit are disclosed. The memory repair circuit includes a non-volatile storage unit, a volatile storage unit, a controller, a self-test circuit, and a repair information generating circuit. The non-volatile storage unit stores a first repair information. The volatile storage unit functions as a data transmission bridge between the non-volatile storage unit and the repair information generating circuit. The controller controls reading and burning of the first repair information and a second repair information. The self-test circuit performs a built-in self-test on a main memory configured according to the first repair information. The repair information generating circuit generates the second repair information according to a test result of the built-in self-test. The controller reconfigures the main memory and a spare memory or an embedded redundant memory according to the second repair information.

A three-dimensional stacked integrated circuit (3D SIC) that can have at least a first 3D XPoint (3DXP) die and, in some examples, can have at least a second 3DXP die too. In such examples, the first 3DXP die and the second 3DXP die can be stacked. The 3D SIC can be partitioned into a plurality of columns that are perpendicular to each of the stacked dies. In such examples, when a first column of the plurality of columns is determined as failing, data stored in the first column can be replicated to a second column of the plurality of columns. Also, for example, when a part of a first column of the plurality of columns is determined as failing, data stored in the part of the first column can be replicated to a corresponding part of a second column of the plurality of columns.

Methods, systems, and devices for speculative memory section selection are described. Defective memory components in one memory section may be repaired using repair components in another memory section. Speculative selection of memory sections may be enabled, whereby access lines in multiple memory sections may be selected when a memory command indicating an address in one memory section is received. While the access lines in the multiple memory sections are selected, a determination of whether repair components in another memory section are to be accessed is performed. Based on the determination, the access line in one of the memory sections may be maintained and the access lines in the other memory sections may be deselected.