A module for multiple dies is disclosed. The module can include a group of dies that include a first die having a first voltage block and a second die having a second voltage block. The module can also include an interconnect that electrically connects the first and second dies. Power supply generation in the first die is enabled in non-active mode, while power supply generation in the second die is disabled. The power supply generation in the second die may be enabled when the second die is in active mode. The first die can send enabling signal to the second the die to enable the second die. The first die can provide supply to the second die in the non-active mode. The first die can send self-refresh timing command to the second die when the module is in a self-refresh mode.

A device includes an operation control circuit and a drive control signal generation circuit. The operation control circuit generates an internal refresh signal that is activated to perform an active operation for a cell array, the cell array being coupled to a word line that is selected by a row address based on a refresh signal that is activated to perform a refresh operation. In addition, the operation control circuit generates a pre-refresh pulse based on the refresh signal and generates a refresh end pulse based on the internal refresh signal. The drive control signal generation circuit generates a drive control signal to control a drive of an active voltage that is supplied to the word line that is selected by the row address based on the internal refresh signal, the pre-refresh pulse, and the refresh end pulse.

Methods and systems for controlling refresh operations of a memory device. A method disclosed herein includes receiving, by a refresh controller of the memory device, a refresh command from a host for performing the refresh operation on a plurality of memory rows. The method further includes selecting, by the refresh controller, at least one memory row from the plurality of memory rows for the refresh operation using a refresh-row selection circuitry. The at least one memory row is selected by performing digital reading or analog reading of at least one row condition cell (RCC) and at least one supplemental cell that are connected to each memory row of the memory rows. The method further includes performing, by the refresh controller, the refresh operation on the selected at least one memory row.

Methods, systems, and devices for biasing a memory cell during a read operation are described. For example, a memory device may bias a memory cell to a first voltage (e.g., a read voltage) during an activation phase of a read operation. After biasing the memory cell to the first voltage, the memory device may bias the memory cell to a second voltage greater than the first voltage (e.g., a write voltage) during the activation phase of the read operation. After biasing the memory cell to the second voltage, the memory device may initiate a refresh phase of the read operation. Based on a value stored by the memory cell prior to biasing the memory cell to the first voltage, the memory device may initiate a precharge phase of the read operation.

Disclosed herein is an apparatus that includes a memory cell array including a plurality of memory cells, a first counter circuit configured to periodically update a count value during a first operation mode, a burst clock generator configured to successively generate a burst pulse predetermined times when the count value indicates a predetermined value, and a row address control circuit configured to perform a refresh operation on the memory cell array in response to the burst pulse.

A refresh circuit includes: a signal generation module, configured to generate an inversion signal and a carry signal based on a refresh command; an adjustment unit, configured to generate, if a first refresh signal and a second refresh signal are generated based on the refresh command, an inversion adjustment signal according to the inversion signal, and generate, if only the first refresh signal is generated based on the refresh command, the inversion adjustment signal according to an inversion signal corresponding to a first refresh signal generated based on a current refresh command, and generate the inversion adjustment signal only according to an inversion signal corresponding to a second refresh signal generated based on a next refresh command; and a counting module, configured to generate a first output signal and a second output signal, and invert the first output signal based on the inversion adjustment signal.

A device includes an operation control circuit and a drive control signal generation circuit. The operation control circuit generates an internal refresh signal that is activated to perform an active operation for a cell array, the cell array being coupled to a word line that is selected by a row address based on a refresh signal that is activated to perform a refresh operation. In addition, the operation control circuit generates a pre-refresh pulse based on the refresh signal and generates a refresh end pulse based on the internal refresh signal. The drive control signal generation circuit generates a drive control signal to control a drive of an active voltage that is supplied to the word line that is selected by the row address based on the internal refresh signal, the pre-refresh pulse, and the refresh end pulse.

Methods, systems, and devices for refresh rate control for a memory device are described. For example, a memory array of a memory device may be refreshed according to a first set of refresh parameters, such as a refresh rate. The memory device may detect an event at the memory device associated with a reduction in data integrity. In some cases, the event may be associated with a temperature of the memory device, a voltage level detected at the memory device, an error event at the memory device, or the like. As a result of detecting the event, the memory device may adapt one or more of the set of refresh parameters, such as increasing the refresh rate for the memory array. In some cases, the memory device may adapt the set of refresh parameters by increasing a quantity of rows of the memory array that are refreshed during a refresh operation, decreasing a periodicity between refresh operations, or both.

Methods, systems, and devices for techniques for reducing row hammer refresh are described. A memory device may be segmented into regions based on bits (e.g., the least significant bits) of row addresses such that consecutive word lines belong to different regions. A memory device may initiate a refresh operation for a first row of memory cells corresponding to a first word line. The memory device may determine that the first row is an aggressor row of a row hammer attack and may determine an adjacent row associated with a second word line as a victim row that may need to be refreshed (e.g., to counteract potential data corruption due to a row hammer attack). The memory die may determine whether to perform a row-hammer refresh operation on the victim row based on whether the victim row belongs to a region that is masked.

One embodiment provides a memory module. The memory module includes a plurality of rows of memory cells, with a respective row comprising one or more canary memory cells that are more susceptible to disturbance than non-canary memory cells, and a disturbance-detection circuit coupled to at least one canary memory cell of a corresponding row and configured to output a control signal in response to the disturbance to the canary memory cell exceeding a predetermined threshold.