One or more of multiple metrics for multiple logical page types of the memory device are determined. Each of the metrics is indicative of a number of bit errors associated with a particular logical page type of the multiple logical page types. A current page margin associated with a first logical page type of the multiple logical page types is modified to determine a modified page margin based at least in part on a ratio using one or more of the multiple metrics. The current page margin associated with the first logical page type is adjusted in accordance with the modified page margin.

An operating method of a nonvolatile memory device includes receiving, at the nonvolatile memory device, a suspend command, suspending, at the nonvolatile memory device, a program operation being performed, in response to the suspend command, receiving, at the nonvolatile memory device, a resume command, and resuming, at the nonvolatile memory device, the suspended program operation in response to the resume command. The program operation includes program loops, each of which includes a bit line setup interval, a program interval, and a verify interval. In the program interval of each of the program loops, a level of a program voltage to be applied to selected memory cells of the nonvolatile memory device increases as much as a first voltage. A difference between a level of the program voltage finally applied s suspend and a level of the program voltage applied first after resume is different from the first voltage.

A memory device includes a plurality of planes. A method of programming the memory device includes applying a first program pulse to one or more memory cells of a first plane of the plurality of planes, verifying whether each one of the memory cells reaches a predetermined program state, and in response to a preset number of the memory cells in the first plane failing to reach the predetermined program state after the memory cells being verified for a predetermined number of times, bypassing the first plane when applying a second program pulse after the first program pulse.

A memory access operation performed on a first memory unit of a memory device is detected. A counter associated with the first memory unit is modified. It is determined that the counter satisfies a threshold criterion, wherein the threshold criterion is based on a random or pseudo-random number within a margin of an average number of memory access operations. A refresh operation is performed on a second memory unit.

A memory device includes a plurality of planes. A method of programming the memory device includes applying a first program pulse to one or more memory cells of a first plane of the plurality of planes, verifying whether each one of the memory cells reaches a predetermined program state, and in response to a preset number of the memory cells in the first plane failing to reach the predetermined program state after the memory cells being verified for a predetermined number of times, bypassing the first plane when applying a second program pulse after the first program pulse.

An operating method of a nonvolatile memory device for programming multi-page data, the operating method including: receiving the multi-page data from a memory controller; programming first page data among the multi-page data to first memory cells connected to a word line adjacent to a selected word line; reading previous page data previously stored in second memory cells connected to the selected word line based on a first sensing value and a second sensing value after programming the first page data; calculating a first fail bit number by comparing first bits of the previous page data read based on the first sensing value to second bits of the previous page data read based on the second sensing value; and programming the previous page data read from the second memory cells and second page data among the multi-page data to the second memory cells based on the first fail bit number.

A method for reading data stored in a flash memory includes at least the following steps: controlling the flash memory to perform a plurality of read operations upon a plurality of memory cells included in the flash memory; obtaining a plurality of bit sequences read from the memory cells, respectively, wherein the read operations read bits of a predetermined bit order from the memory cells by utilizing different control gate voltage settings; and determining readout information of the memory cells according to binary digit distribution characteristics of the bit sequences.

An operation method of a nonvolatile memory device which includes a memory block having wordlines includes performing an erase on the memory block, performing a block verification on the memory block by using a 0-th erase verification voltage, performing a delta verification on the memory block by using a first erase verification voltage different from the 0-th erase verification voltage when a result of the block verification indicates a pass, and outputting information about an erase result of the memory block based on the result of the block verification or a result of the delta verification. The delta verification includes generating delta counting values respectively corresponding to wordline groups by using the first erase verification voltage, generating a delta value based on the delta counting values, and comparing the delta value and a first reference value.

Various embodiments enable age tracking of one or more physical memory locations (e.g., physical blocks) of a memory die, which can be from part of a memory device. In particular, various embodiments provide age tracking of one or more physical memory locations of a memory die (e.g., memory integrated circuit (IC)) using one or more aging bins on the memory die, where each aging bin is associated with a different set of physical memory locations of the memory die. By use of an aging bin for a set of physical memory locations, various embodiments can enable a processing device that interacts with a memory die, after the memory die has been subjected to one or more reflow soldering processes, to determine how much the set of physical memory locations have aged after the one or more reflow soldering processes.

A level count disparity is determined based at least in part on: (1) an expected count of a plurality of cells in solid state storage and (2) an observed count of the plurality of cells in the solid state storage, where the observed count is associated with a number of cells in the solid state storage that are activated by performing a single read on the solid state storage using a previous read threshold. A next read threshold is determined, including by: determining a direction relative to the previous read threshold based at least in part on the level count disparity and independent of the second and earlier level count disparity; and determining a magnitude based at least in part on the level count disparity and the second and earlier level count disparity. Read data is obtained using the next read threshold and error correction decoding is performed.