A pipe outer surface inspection apparatus. The apparatus may include a carriage adapted for turning on a pipe to be inspected and includes a pipe inspection head. The apparatus may include at least one of a surface profile gauge, coating thickness gauge, and coating holiday detector. The apparatus may include a pendulum encoder, a cable guard, and/or a magnetic fastener. Associated methods are also disclosed.

An evaporation apparatus is disclosed. The evaporation apparatus includes an operation platform; an evaporation source on the operation platform; an inner plate on at least one side of the evaporation source, the inner plate being fixedly connected to the evaporation source; and an outer plate on a side of the inner plate away from the evaporation source, the outer plate being adjacent to the inner plate. The inner plate can be configured to detect an evaporation rate of the evaporation source, and the outer plate can adjust an evaporation range.

The present disclosure relates to methods of making a transition metal dichalcogenide. The methods can include a step of depositing a transition metal onto a substrate to form an epitaxial transition metal layer. The methods can also include a step of depositing a chalcogen onto the epitaxial transition metal layer, and a step of reacting the chalcogen with the epitaxial transition metal layer to form a transition metal dichalcogenide. In some instances, the chalcogen is reacted with the epitaxial transition metal layer at a temperature of between about 300 C. and 600 C., between about 300 C. and 550 C., between about 300 C. and 500 C., between about 300 C. and 450 C., or between about 300 C. and 400 C.

Systems and methods are provided for implementing a crystal oscillator to monitor and control semiconductor fabrication processes. More specifically, a method is provided for that includes performing at least one semiconductor fabrication process on a material of an integrated circuit (IC) disposed within a processing chamber. The method further includes monitoring by at least one electronic oscillator disposed within the processing chamber for the presence or absence of a predetermined substance generated by the at least one semiconductor fabrication process. The method further includes controlling the at least one semiconductor fabrication process based on the presence or absence of the predetermined substance detected by the at least one electronic oscillator.

Systems and methods are provided for implementing a crystal oscillator to monitor and control semiconductor fabrication processes. More specifically, a method is provided for that includes performing at least one semiconductor fabrication process on a material of an integrated circuit (IC) disposed within a processing chamber. The method further includes monitoring by at least one electronic oscillator disposed within the processing chamber for the presence or absence of a predetermined substance generated by the at least one semiconductor fabrication process. The method further includes controlling the at least one semiconductor fabrication process based on the presence or absence of the predetermined substance detected by the at least one electronic oscillator.

In a method for manufacturing an organic EL display device, an underlying film is formed on each of a plurality of crystal oscillators of a film thickness measuring device. A crystal oscillator to be used for thickness measurement of the thin film is selected from the plurality of crystal oscillators with the underlying film formed thereon. The thin film is formed on the selected crystal oscillator and the substrate of the organic EL display device. A thickness of the thin film formed on the substrate of the organic EL display device is measured on the basis of a thickness of the thin film formed on the selected crystal oscillator, while forming the thin film. The crystal oscillator used for thickness measurement of the thin film is changed for another crystal oscillator on the basis of the thickness of the thin film formed on the selected crystal oscillator.

Embodiments of the present invention disclose a detection device for detecting a thickness of a vacuum-evaporated film and a vacuum evaporation apparatus, thereby solving, for example, a problem that a conventional detection device results in excessively high production cost due to frequent replacement of a crystal plate. The detection device includes: a crystal plate, a detection structure provided with an opening corresponding to the crystal plate such that evaporated molecules or atoms are deposited on the crystal plate through the opening; and a filter disposed between the opening and the crystal plate.

A system for monitoring thin film deposition is described. The system includes a quartz crystal and a synthesizer to generate a modulated signal. The modulated signal is to be grounded through the quartz crystal. The system also includes a phase detector to determine a phase of the modulated signal from the quartz crystal in order to monitor thin film deposition. A modulation index can be selected so that, at resonance, high frequency of the signal matches the crystal frequency.

The present disclosure relates to methods of making a transition metal dichalcogenide. The methods can include a step of depositing a transition metal onto a substrate to form an epitaxial transition metal layer. The methods can also include a step of depositing a chalcogen onto the epitaxial transition metal layer, and a step of reacting the chalcogen with the epitaxial transition metal layer to form a transition metal dichalcogenide. In some instances, the chalcogen is reacted with the epitaxial transition metal layer at a temperature of between about 300 C. and 600 C., between about 300 C. and 550 C., between about 300 C. and 500 C., between about 300 C. and 450 C., or between about 300 C. and 400 C.

An inductive structure may be manufactured with in-situ characterization of dimensions by forming a metal line on a top surface of a semiconductor die, forming a passivation dielectric layer over the metal line, measuring a height profile of a top surface of the passivation dielectric layer as a function of a lateral displacement, forming a magnetic material plate over the passivation dielectric layer, measuring a height profile of a top surface of the magnetic material plate as a function of the lateral displacement, and determining a thickness profile of the magnetic material plate by subtracting the height profile of the top surface of the passivation dielectric layer from the height profile of the top surface of the magnetic material plate. An inductive structure including the magnetic material plate and the metal line is formed.