Probe systems and methods for calibrating capacitive height sensing measurements. A probe system includes a probe assembly with a probe support body that supports a capacitive displacement sensor that terminates in a sensing tip relative to a substrate and that is configured to generate an uncalibrated capacitive height measurement. A method of utilizing the probe system to generate a calibrated capacitive height measurement includes receiving a height calibration structure architecture; calculating a layer impedance magnitude of each substrate layer of the height calibration structure; and calculating a total layer impedance magnitude of the height calibration structure. The method further includes measuring a measured impedance magnitude and calculating the calibrated capacitive height measurement.

A method for producing an insulated electric wire includes a step of preparing a conductor having a linear shape; a step of forming an insulating coating so as to cover a surface on an outer peripheral side of the conductor to obtain an insulated electric wire that includes the conductor and the insulating coating covering the conductor; and a step of measuring a first electrostatic capacity between the insulated electric wire and a first electrode disposed outside in a radial direction of the insulated electric wire so as to face an outer peripheral surface of the insulated electric wire while transporting the insulated electric wire in a longitudinal direction of the conductor, and inspecting a formation state of the insulating coating, the formation state including a formation state of a defective portion in the insulating coating, on the basis of a change in the first electrostatic capacity.

Embodiments of the present disclosure relate to apparatus and methods for forming films having uniformity of thickness on substrates. Embodiments of the present disclosure may be used to measure thickness or other properties of films being deposited on a substrate without knowing beforehand the surface properties of the substrate. Embodiments of the present disclosure may be used to measure thickness or other properties of a plurality of layers being formed. For example, embodiments of the present disclosure may be used in measuring thickness of vertical memory stacks.

A measuring device includes a substrate disposed on a substrate support of a plasma processing apparatus, a transmission circuit, a transmitting antenna, a receiving antenna, a reception demodulation circuit, and a calculator which are provided in the substrate. The transmission circuit generates a microwave. The transmitting antenna transmits the microwave generated by the transmission circuit as a transmission wave. The receiving antenna receives a reflected wave of the transmission wave by plasma above the substrate support as at least one reception wave. The reception demodulation circuit generates a signal that reflects a thickness of a sheath between the substrate and the plasma, from the reception wave. The calculator obtains the thickness of the sheath from the signal generated by the reception demodulation circuit.

In a method for obtaining the equivalent oxide thickness of a dielectric layer, a first semiconductor capacitor including a first silicon dioxide layer and a second semiconductor capacitor including a second silicon dioxide layer are provided and a modulation voltage is applied to the semiconductor capacitors to measure a first scanning capacitance microscopic signal and a second scanning capacitance microscopic signal. According to the equivalent oxide thicknesses of the silicon dioxide layers and the scanning capacitance microscopic signals, an impedance ratio is calculated. The modulation voltage is applied to a third semiconductor capacitor including a dielectric layer to measure a third scanning capacitance microscopic signal. Finally, the equivalent oxide thickness of the dielectric layer is obtained according to the equivalent oxide thickness of the first silicon dioxide layer, the first scanning capacitance microscopic signal, third scanning capacitance microscopic signal, and the impedance ratio.

A non-destructive and non-contact test system quantifies the cellulose and/or plastic content in a given composite material board sample using capacitive sensors. The system includes a ground plate and a capacitive sensor probe system with programmed instructions to calibrate to a predetermined dielectric, determine, in a composite board placed in between the capacitive sensor and the ground plate, an equivalent thickness of material emitting the predetermined dielectric, and convert the equivalent thickness into a weight percentage of the material in the board.

A boring apparatus including a drill having a drill bit; a capacitance sensor; and an alarm; wherein the capacitance sensor is electrically connected to the drill bit and detects a change in capacitance associated with a substrate material in proximity to the drill bit.

Described are methods and devices for detecting the presence and surface location of an electrically conductive coating on a transparent and/or translucent medium.

Provided herein are systems, methods and apparatuses for a thickness measurement device based on a capacitive array.

Embodiments of the present disclosure relate to apparatus and methods for forming films having uniformity of thickness on substrates. Embodiments of the present disclosure may be used to measure thickness or other properties of films being deposited on a substrate without knowing beforehand the surface properties of the substrate. Embodiments of the present disclosure may be used to measure thickness or other properties of a plurality of layers being formed. For example, embodiments of the present disclosure may be used in measuring thickness of vertical memory stacks.