A device for film thickness measurement and a method for film thickness measurement are disclosed. The device includes a planar indenter, a collecting unit and a processing unit. The planar indenter includes a base plate and a piezoelectric film layer. The collecting unit includes a plurality of collecting circuits evenly distributed above the piezoelectric film layer and spaced from each other. The collecting circuits are used for collecting current signals generated when the piezoelectric film layer deforms at positions corresponding to the collecting circuits. The processing unit is used for calculating a film thickness of the film sample to be measured based on the current signals collected by each of the collecting circuits.

A detection device includes a chamber for vacuum coating, a capacitance measurement device and a baffle mechanism located in the chamber. The baffle mechanism is a closed structure encompassed by a number of baffle walls, wherein at least one baffle wall includes a fixed baffle plate and a moveable baffle plate. The moveable baffle plate is pivotable about the fixed baffle plate. The moveable baffle plate, after pivoting, may get parallel with an adjacent baffle wall. The adjacent baffle wall and the moveable baffle plate are respectively connected to the capacitance measurement device, and the capacitance measurement device is used to measure the capacitance between the adjacent baffle wall and the moveable baffle plate. The detection device may accurately detect the service life of the baffle mechanism and achieve precise management of the apparatus.

A method includes collecting native dust on a collection probe having a reading probe spaced apart therefrom; generating, by a capacitance sensor comprising first and second input leads that are coupled to the collection probe and the reading probe, respectively, a signal that is representative of a capacitance between the collection probe and the reading probe; and correlating the signal with a depth of the native dust on the collection probe.

A system includes a displacement-type capacitive sensor probe and at least one processor and at least one memory. The at least one memory stores instructions that, when executed by the at least one processor, cause the at least one processor to calibrate the sensor probe to a known dielectric constant of a first material, send an instruction to the sensor probe to measure a capacitive response of a composite article comprising the first material and a second material, receive the measured capacitive response from the calibrated sensor probe, determine, based on the measured capacitive response, an equivalent thickness of the first material in the composite article, and determine a percentage of the first material in the composite article based on the equivalent thickness of the first material and a thickness of the composite article.

A method is described for measuring, in a multi-layer film having one or more layers of a first and a second material, the total thickness of the first material and/or the second material. The method includes: a) acquiring, by means of an optical or an ionizing radiation sensor, a first measurement signal (S.sub.ott) representative of the total thickness of the film; b) acquiring, by means of a capacitive sensor, a second measurement signal which is the sum of the signals given by the first and second material of the film. The signal given by each material of the film is a function of the thickness of the material; and c) calculating, from the first and second signal, the total thickness of the first material and/or the second material.

Provided is an apparatus capable of distinguishing a kind of a powder deposited on an inner surface of a pipe, and more precisely measuring a thickness of the powder deposited on the inner surface of the pipe. The apparatus for measuring a thickness of a powder deposited on an inner surface of a pipe, includes a pair of the first electrodes disposed adjacent to one portion of the inner surface of the pipe and used to measure a first capacitance and thus to distinguish a kind of the powder, and a pair of second electrodes disposed in the pipe to be spaced from each other and to be symmetrical with respect to a center portion of the pipe and used to measure a second and a third capacitance.

Provided is an apparatus capable of distinguishing a kind of a powder deposited on an inner surface of a pipe, and more precisely measuring a thickness of the powder deposited on the inner surface of the pipe. The apparatus for measuring a thickness of a powder deposited on an inner surface of a pipe, includes a pair of the first electrodes disposed adjacent to one portion of the inner surface of the pipe and used to measure a first capacitance and thus to distinguish a kind of the powder, and a pair of second electrodes disposed in the pipe to be spaced from each other and to be symmetrical with respect to a center portion of the pipe and used to measure a second and a third capacitance.

A probe calibration device that includes a first offset element having a substantially rectangular first aperture. The probe calibration device includes a tuned pass element disposed adjacent to the first offset element. The tuned pass element has a non-rectangular second aperture. The probe calibration device includes a second offset element disposed adjacent to the tuned pass element and on a side opposite the first offset element. The second offset element has a substantially rectangular third aperture. The probe calibration device includes a backing element disposed adjacent to the second offset element. The first offset element, the tuned pass element, the second offset element and the backing element form a cavity.

The embodiments of the invention disclose a device for film thickness measurement and a method for film thickness measurement. The device comprises a planar indenter, a collecting unit and a processing unit. The planar indenter comprises a base plate and a piezoelectric film layer. The collecting unit comprises a plurality of collecting circuits evenly distributed above the piezoelectric film layer and spaced from each other. The collecting circuits are used for collecting current signals generated when the piezoelectric film layer deforms at positions corresponding to the collecting circuits. The processing unit is used for calculating a film thickness of the film sample to be measured based on the current signals collected by each of the collecting circuits.

The thickness of a palladium coating on copper (or another substrate) is measured by passing a cathodic current through a predetermined area of the coating in contact with an electrolytic solution and measuring the potential as a function of time. Protons from the electrolytic solution are electrochemically reduced to palladium hydride at cathodic potentials less negative than required for evolution of hydrogen. As formation of the PdH.sub.0.58 beta-phase throughout the Pd coating is completed, the cathodic potential increases rapidly to a cathodic potential plateau corresponding to evolution of hydrogen gas on the PdH.sub.0.58 surface. This step in the cathodic potential provides an endpoint time for the measurement. The absolute thickness of the Pd coating is calculated from the integrated cathodic charge passed up to the endpoint time and the predetermined area of the coating in contact with the electrolytic solution.