Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.

A height measurement apparatus includes: a light irradiation unit that irradiates a sample with irradiation light; a camera system that detects light from the sample irradiated with the irradiation light; and a control apparatus that calculates a height of the sample based on the wavelength information. The camera system includes an inclined dichroic mirror of which a transmittance and a reflectance change according to a wavelength in a predetermined wavelength range and which separates the light from the sample by transmitting and reflecting the light, a light detector that detects a reflected light quantity from light reflected by the inclined dichroic mirror, a light detector that detects a transmitted light quantity from light transmitted through the inclined dichroic mirror, and a processing unit that calculates the wavelength information based on a ratio between the reflected light quantity and the transmitted light quantity, to output the wavelength information.

Methods and systems for selecting measurement locations on a wafer for subsequent detailed measurements employed to characterize the entire wafer are described herein. High throughput measurements are performed at a relatively large number of measurement sites on a wafer. The measurement signals are transformed to a new mathematical basis and reduced to a significantly smaller dimension in the new basis. A set of representative measurement sites is selected based on analyzing variation of the high throughput measurement signals. In some embodiments, the spectra are subdivided into a set of different groups. The spectra are grouped together to minimize variance within each group. Furthermore, a die location is selected that is representative of the variance exhibited by the die in each group. A spectrum of a measurement site and corresponding wafer location is selected to correspond most closely to the center point of each cluster.

A polishing apparatus and a polishing method capable of accurately measuring a film thickness of a workpiece, such as wafer, substrate, or panel, used in manufacturing of semiconductor devices during polishing of the workpiece are disclosed. The processing system is configured to determine a film thickness of the workpiece based on relative reflectance data calculated by a calculation formula expressed as: the relative reflectance data=MD1/[BD1.Math.k], where MD1 represents first intensity measurement data indicating intensity of the reflected light from the workpiece measured by the first spectrometer, BD1 represents the first base intensity data, and k represents a rate of change in second intensity measurement data with respect to the second base intensity data. The second intensity measurement data is indicative of intensity of the light of the light source measured by the second spectrometer during polishing of the workpiece.

A substrate processing apparatus includes a chamber including an accommodation space, a stage disposed in the accommodation space and provided with a substrate disposed thereon, a deposition part disposed under the stage and spraying at least one deposition material to the substrate, and a measurement part disposed adjacent to the deposition part. The measurement part includes an accommodation portion provided with an opening defined through at least one surface thereof, a light source disposed in the accommodation portion and irradiating a first light, at least one transmission portion disposed in the opening, facing the light source, and receiving the first light, and a reception portion facing the at least one transmission portion and receiving the first light reflected from the at least one deposition material as a second light.

The invention describes a metrology system allowing for the reduction of the errors caused by vibration of the production floor and allowing for measurements of the thickness of wafers in motion. This is accomplished by performing simultaneous measurements of spectra containing interference signals containing distance information using a plurality of probes positioned on both sides of the measured wafer on the same detector at the same time or by means of plurality of synchronized detectors. System is also able to measure thickness of the individual optically accessible layers present in the sample.

An inspection system for inspecting an object including a base and a coating layer includes: an emission unit configured to irradiate the object with a terahertz wave including at least a reference pattern; and a support unit configured to adjust a relative position between the emission unit and the object. The inspection system further includes: a detection unit configured to detect the terahertz wave reflected on the object and acquire a terahertz image; and a determination unit configured to determine, from a shape of the terahertz image, whether an incident angle of the terahertz wave on the object is a predetermined incident angle.

An optical unit includes an input portion configured to have measurement light having a wavelength extending from an ultraviolet region to a visible region input thereto, an optical system configured to condense the measurement light in a state where a chromatic aberration is caused to occur, and an opening portion configured not to image light having a wavelength in the visible region and to image light having a wavelength in the ultraviolet region of the measurement light having a chromatic aberration having occurred therein.

A thickness measuring device of the present invention includes a supporter which supports a specimen, an emission unit which emits an electromagnetic wave in a direction toward the specimen, a chamber which surrounds the specimen, a receiving unit which receives an electromagnetic wave output in a direction in which the chamber is positioned, and a control unit which receives a signal from the receiving unit and calculates a thickness of the specimen. At least a part of the chamber transmits a part of the electromagnetic wave and reflects the remaining part of the electromagnetic wave. The receiving unit receives a first electromagnetic wave having a first peak and a second electromagnetic wave having a second peak. The first peak occurs at a first time point, the second peak occurs at a second time point, and a difference between the first time point and the second time point is a first period or more.

A method of producing a model capable of reducing an influence of spectral variation of reflected light from a workpiece, such as a wafer, and capable of determining an accurate film thickness is disclosed. The method includes: determining sample features representing features of sample spectra of reflected lights from a sample having a film; obtaining similarities by calculating a similarity between each of the sample spectra and a representative spectrum; and producing a film-thickness estimation model by performing machine leaning using training data including the sample features, the similarities, and film thicknesses corresponding to the sample spectra.