A deposition system is provided capable of measuring at least one of the film characteristics (e.g., thickness, resistance, and composition) in the deposition system. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition system in accordance with the present disclosure includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, and a target enclosing the substrate process chamber. A shutter disk including an in-situ measuring device is provided.

Methods and systems for performing optical measurements of semiconductor structures while modulating both an electric field within one or more structures under measurement and the measurement light employed to measure the one or more structures are presented herein. Spectroscopic ellipsometry, spectroscopic reflectometry, and angle resolved spectroscopic reflectometry measurements are enhanced by modulation of the electric field of the structures under measurement. The modulation of the electric field changes the dielectric function of the materials under measurement. Measurements are performed with an enriched data set including measurement signals collected from one or more structures under time varying optical and electric field conditions. This reduces parameter correlation among floating measurement parameters and improves measurement accuracy. Differences between frequencies of optical modulation and electric field modulation increase the contrast within the one or more structures under measurement, which, in turn, increases measurement accuracy with reduced computational effort.

A method and device of thin film spectroellipsometric imaging are disclosed. The device comprises an illuminator to direct light through a polarization generator system toward an extended area of a sample; an imaging system to form images; a detection system to record in a plurality of spectral channels; a computer to display and analyze the recorded images; and at least one reference phantom with known optical properties to replace the sample for calibration. The method comprises directing light from an illuminator through a polarization generator system toward an extended area of a sample having a geometrical shape; forming images with an imaging system; adjusting a polarization generator system and a polarization analyzer system to obtain a series of polarimetric setups; recording the images with a detection system in a plurality of spectral channels; replacing the sample with at least one reference phantom; and analyzing the recorded images with a computer.

A system for measuring a thickness of a coating arranged on an anode substrate includes an optical measurement system configured to transmit a light signal having a known first polarization toward the anode substrate through the coating such that the light signal is reflected from the surface of the anode substrate, a detection module positioned to receive the reflected light signal and configured to determine a second polarization of the reflected light signal that is different from the first polarization and measure a polarization difference between the first polarization and the second polarization, and a measurement module configured to receive the measured polarization difference, calculate the thickness of the coating based on the measured polarization difference, and generate an output based on the calculated thickness.

A film thickness measuring device including: a terahertz wave generator; a prism that has an entrance surface, an abutment surface capable of abutting a surface of a sample including a first film on a side where the first film is formed, and an emission surface; a terahertz wave detector that detects an S-polarization component and a P-polarization component of a reflected wave from the sample, emitted from the emission surface of the prism; and a control section configured to determine a thickness of the first film formed in the sample, based on a difference between a time waveform of the S-polarization component of the reflected wave and a time waveform of the P-polarization component of the reflected wave.

A multi-modal sensor system includes: an underlying sensor system; a polarization camera system configured to capture polarization raw frames corresponding to a plurality of different polarization states; and a processing system including a processor and memory, the processing system being configured to control the underlying sensor system and the polarization camera system, the memory storing instructions that, when executed by the processor, cause the processor to: control the underlying sensor system to perform sensing on a scene and the polarization camera system to capture a plurality of polarization raw frames of the scene; extract first tensors in polarization representation spaces based on the plurality of polarization raw frames; and compute a characterization output based on an output of the underlying sensor system and the first tensors in polarization representation spaces.

System and method for use in optical monitoring of a sample. The system comprising: a light source unit (140) for providing collimated illumination; polarization modulation unit (160) located in optical path of light propagating from the light source unit; a lens unit (120) for focusing light onto an illumination spot on a surface of a sample, and for collection of light components returning from the sample; a light collection unit configured for collecting light returning from the sample and generate output image data associated with Fourier plane imaging with respect to surface of the sample; and a control unit (500) configured processing said data in accordance with said system calibration. The method provides calibration data, and comprising: providing reference data indicative of complex refractive index of the reference samples on at least two reference samples; collecting ellipsometry data for said at least two reference samples using the ellipsometry system, generating output data having a plurality of data pieces, each associated with unknown angular direction; and for each data piece corresponding to an unknown angular direction, determining simultaneously system parameters and angle of incidence in accordance with corresponding parameters of the reference data to thereby determine calibration data.

An ellipsometer includes a first separation unit configured to separate a first reflected light into two reflected lights, a first polarizing optical element configured to separate each of the two reflected lights into two linearly polarized lights, a first interference device configured to form an interference fringe by allowing components of the two linearly polarized lights to interfere with each other, a second separation unit configured to separate a second reflected light into two reflected lights, a second polarizing optical element configured to separate each of the two reflected lights into two linearly polarized lights, and a second interference device configured to form an interference fringe by allowing components of the two linearly polarized lights to interfere with each other.

Methods and systems for performing optical measurements of geometric structures filled with an adsorbate by a gaseous adsorption process are presented herein. Measurements are performed while the metrology target under measurement is treated with a flow of purge gas that includes a controlled amount of fill material. A portion of the fill material adsorbs onto the structures under measurement and fills openings in the structural features, spaces between structural features, small volumes such as notches, trenches, slits, contact holes, etc. In one aspect, the desired degree of saturation of vaporized material in the gaseous flow is determined based on the maximum feature size to be filled. In one aspect, measurement data is collected when a structure is unfilled and when the structure is filled by gaseous adsorption. The collected data is combined in a multi-target model based measurement to reduce parameter correlations and improve measurement performance.

An ellipsometer includes a light source, a polarizer, an asymmetric wavelength retarder, an analyzer and an optical detection component. The light source is configured to provide a light beam having multiple wavelengths incident to a sample. The polarizer is disposed between the light source and the sample, and configured to polarize the light beam. The asymmetric wavelength retarder is configured to provide a varied retardation effect on the light beam varied by wavelength. The analyzer is configured to analyze a polarization state of the light beam reflected by the sample. The optical detection component is configured to detect the light beam from the analyzer.