A multi-mode approach for real-time inspection of structural components may be applied to rapid, wide area measurement of thickness of thick plate-like structures using full-field multi-mode response measurement and analysis. The approach may allow estimation of thickness from full-field multi-mode response to single-tone ultrasonic excitation in thick plates. The approach may utilize wavenumber information across all available wave modes in order to make wavenumber spectroscopy sensitive to changes in thickness for a broader range of nominal initial thicknesses.

A method and system are presented for use in measuring characteristic(s) of patterned structures. The method utilizes processing of first and second measured data, wherein the first measured data is indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of illuminating and/or collected light conditions corresponding to the characteristic(s) to be measured, and the second measured data comprises at least one spectrum obtained from the patterned structure in Optical Critical Dimension (OCD) measurement session. The processing comprises applying model-based analysis to the at least one Raman spectrum and the at least one OCD spectrum, and determining the characteristic(s) of the patterned structure under measurements.

A method and system are presented for use in measuring one or more characteristics of patterned structures. The method comprises: providing measured data comprising data indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of at least one of illuminating and collected light conditions corresponding to the characteristic(s) to be measured; processing the measured data, and determining, for each of the at least one Raman spectrum, a distribution of Raman-contribution efficiency (RCE) within at least a part of the structure under measurements, being dependent on characteristics of the structure and the predetermined configuration of the at least one of illuminating and collected light conditions in the respective optical measurement scheme; analyzing the distribution of Raman-contribution efficiency and determining the characteristic(s) of the structure.

A method and system are presented for use in measuring characteristic(s) of patterned structures. The method utilizes processing of first and second measured data, wherein the first measured data is indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of illuminating and/or collected light conditions corresponding to the characteristic(s) to be measured, and the second measured data comprises at least one spectrum obtained from the patterned structure in Optical Critical Dimension (OCD) measurement session. The processing comprises applying model-based analysis to the at least one Raman spectrum and the at least one OCD spectrum, and determining the characteristic(s) of the patterned structure under measurements.

A plasma processing apparatus and method with an improved processing yield, the plasma processing apparatus including detector configured to detect an intensity of a first light of a plurality of wavelengths in a first wavelength range and an intensity of a second light of a plurality of wavelengths in a second wavelength range, the first light being obtained by receiving a light which is emitted into the processing chamber from a light source disposed outside the processing chamber and which is reflected by an upper surface of the wafer, and the second light being a light transmitted from the light source without passing through the processing chamber; and a determination unit configured to determine a remaining film thickness of the film layer by comparing the intensity of the first light corrected using a change rate of the intensity of the second light.

A method for use in measuring one or more characteristics of patterned structures, the method including providing measured data comprising data indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of at least one of illuminating and collected light conditions corresponding to the one or more characteristics to be measured, processing the measured data, and determining, for each of the at least one Raman spectrum, a distribution of Raman-contribution efficiency (RCE) within at least a part of the structure under measurements, being dependent on characteristics of the structure and the predetermined configuration of the at least one of illuminating and collected light conditions in the respective optical measurement scheme, and analyzing the distribution of Raman-contribution efficiency and determining the one or more characteristics of the structure.

According to one embodiment, as optical test apparatus includes a pump beam generating unit, a probe beam generating unit; and a photodetector. The pump beam generating unit generates a pump beam for exciting an elastic wave in a specimen. The probe beam generating unit generates a probe beam. The photodetector receives the probe beam. A first light penetration depth of the probe beam relative to the specimen is longer than a second light penetration depth of the pump beam relative to the specimen.

An imaging system according to an embodiment may include an ultrasonic oscillation part configured to apply ultrasonic waves to a sample, an image acquisition part configured to acquire a plurality of images of the sample deformed by the ultrasonic waves, and a computation part configured to compute a deformation rate on the basis of a change in thickness of the sample from the plurality of images, in which the computation part computes an elastic modulus of the sample on the basis of intensity of the ultrasonic waves and the deformation rate of the sample.

The invention relates to a method for measuring a long profile (2), in particular one at an increased temperature, wherein a cross-section of the long profile (2) is determined, wherein the long profile (2) is measured using a light section sensor (4) that is moveably mounted on a swivel device (3). The invention also relates to a device for measuring a long profile (2), in particular one at an increased temperature, comprising a measuring device for determining a cross-section of the long profile (2), wherein a swivel device (3) is provided and the measuring device is formed as a light section sensor (4), wherein the light section sensor (4) is moveably mounted on the swivel device (3). The invention further relates to a use of a device (1) of this type.

A method and system are presented for use in measuring characteristic(s) of patterned structures. The method utilizes processing of first and second measured data, wherein the first measured data is indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of illuminating and/or collected light conditions corresponding to the characteristic(s) to be measured, and the second measured data comprises at least one spectrum obtained from the patterned structure in Optical Critical Dimension (OCD) measurement session. The processing comprises applying model-based analysis to the at least one Raman spectrum and the at least one OCD spectrum, and determining the characteristic(s) of the patterned structure under measurements.