A method for use in measuring one or more characteristics of patterned structures, the method including providing measured data comprising data indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of at least one of illuminating and collected light conditions corresponding to the one or more characteristics to be measured, processing the measured data, and determining, for each of the at least one Raman spectrum, a distribution of Raman-contribution efficiency (RCE) within at least a part of the structure under measurements, being dependent on characteristics of the structure and the predetermined configuration of the at least one of illuminating and collected light conditions in the respective optical measurement scheme, and analyzing the distribution of Raman-contribution efficiency and determining the one or more characteristics of the structure.

Provided is an apparatus that measures a thickness of a coating by selecting a wavelength of a laser based on a color of the coating using a contactless method using a photoacoustic effect and an interferometer, the apparatus including a pulsed laser source to irradiate a pulsed laser beam toward the coating, a continuous wave (CW) laser source to irradiate a CW laser beam toward the coating, a detector to detect an optical interference signal corresponding to the CW laser beam, and a signal processor to process the optical interference signal to calculate a thickness of the coating.

A method and system are presented for use in measuring characteristic(s) of patterned structures. The method utilizes processing of first and second measured data, wherein the first measured data is indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of illuminating and/or collected light conditions corresponding to the characteristic(s) to be measured, and the second measured data comprises at least one spectrum obtained from the patterned structure in Optical Critical Dimension (OCD) measurement session. The processing comprises applying model-based analysis to the at least one Raman spectrum and the at least one OCD spectrum, and determining the characteristic(s) of the patterned structure under measurements.

An additive manufacturing method supporting layer by layer testing includes a layer test including generating a hammer beam using laser light having a first wavelength, generating a read-out beam using laser light having a second wavelength, directing the generated hammer beam toward a first layer on a part to provide an acoustic hammer pulse that induces surface movement of the part, and reading the surface movement of the part using the read-out beam directed to a second position on the part. Layers can be added and the layer test repeated.

An additive manufacturing method supporting layer by layer testing includes a layer test including generating a hammer beam using laser light having a first wavelength, generating a read-out beam using laser light having a second wavelength, directing the generated hammer beam toward a first layer on a part to provide an acoustic hammer pulse that induces surface movement of the part, and reading the surface movement of the part using the read-out beam directed to a second position on the part. Layers can be added and the layer test repeated.

A method and system are presented for use in measuring characteristic(s) of patterned structures. The method utilizes processing of first and second measured data, wherein the first measured data is indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of illuminating and/or collected light conditions corresponding to the characteristic(s) to be measured, and the second measured data comprises at least one spectrum obtained from the patterned structure in Optical Critical Dimension (OCD) measurement session. The processing comprises applying model-based analysis to the at least one Raman spectrum and the at least one OCD spectrum, and determining the characteristic(s) of the patterned structure under measurements.