A measurement device, for measuring the shape of an interface to be measured of an optical element having a plurality of interfaces, the device including: measurement apparatus with at least one interferometric sensor illuminated by a low-coherence source, for directing a measurement beam towards the optical element to pass through the plurality of interfaces, and to detect an interference signal resulting from interferences between the measured measurement beam reflected by the interface and a reference beam; positioning apparatus configured for relative positioning of a coherence area of the interferometric sensor at the level of the interface to be measured; digital processor for producing, based on the interference signal, an item of shape information of the interface to be measured according to a field of view.

A measurement method, for measuring the shape of an interface of an optical element having a plurality of interfaces is also provided.

Disclosed is an interferometric fiber optic sensor for detecting chemical substances. A light source a detector are connected to a light dividing element in an optical path with an optical fiber segment. The optical fiber segment is further optically coupled with a measuring element across a residual cavity. The measuring element further has a face adapted to be exposed to a test substance that may contain a chemical substance to be detected. The optical fiber segment and the measuring element can be held together so that there is only the residual cavity between them. The optical fiber segment is contained, at least along part of its length, within a capillary. A first end part of the capillary is joined with the measuring element while another portion of the capillary is joined or clenched on the optical fiber segment, so that the capillary, the optical fiber segment and the measuring element together form a fiber optic measuring probe as a part of the optical path with the light source and detector.

Methods and apparatus for measuring the melt depth of a substrate during pulsed laser melting are provided. The apparatus can include a heat source, a substrate support with an opening formed therein, and an interferometer positioned to direct coherent radiation toward the toward the substrate support. The method can include positioning the substrate with a first surface in a thermal processing chamber, heating a portion of the first surface with a heat source, directing infrared spectrum radiation at a partially reflective mirror creating control radiation and interference radiation, directing the interference radiation to a melted surface and directing the control radiation to a control surface, and measuring the interference between the reflected radiation. The interference fringe pattern can be used to determine the precise melt depth during the melt process.

An interferometric method of identifying the thickness of an object that is too thin to be resolved by a Fourier transform of the interference signal includes applying a harmonic frequency modulation to an envelope of the interference signal. Where the object is a tear film, this method may be utilized to determine a thickness of the lipid layer of the tear film.

Apparatus include a polarization state generator situated to provide an interferometer source beam with a region of polarized source light with a polarization state that is in-plane as subsequently incident on a sample and a region of polarized source light with a polarization state that is perpendicular to in-plane as subsequently incident on the sample, and an interferometer unit configured to split the interferometer source beam into test and reference arm beams, to direct the test arm beam to the sample and the reference arm beam to a reference surface, and to recombine the test and reference arm beams to produce an interferometer output beam. Methods use a polarization state generator to produce an interferometer source beam with a region of polarized source light with a polarization state that is in-plane as subsequently incident on a sample and a region of polarized source light with a polarization state that is perpendicular to in-plane as subsequently incident on the sample, and use an interferometer unit which splits the interferometer source beam into test and reference arm beams, directs the test arm beam to the sample and the reference arm beam to a reference surface, and recombines the test and reference arm beams to produce an interferometer output beam.

At least one laser sensor and a controller are embedded into a substrate processing system communicating with a remote big data and machine learning server receiving/sending data from/to a fleet of substrate processing systems for autonomous process control and optimization. The laser sensor is arranged proximate to a region of the substrate processing system and is configured to capture first data from at least one of an edge coupling ring and a semiconductor substrate transported from/to the processing chamber to/from the region. The controller is configured to receive the first data from the laser sensor, process the first data to generate second data, transmit the second data to a remote server via a network, receive third data from the remote server via the network in response to sending the second data to the remote server, and operate the substrate processing system based on the third data for process optimization.

According to one embodiment, an analysis apparatus includes a stage on which to place a sample, a light source, a film thickness measurement unit, and a controller. The light source generates a laser beam to irradiate the sample with the laser beam to cause vaporization of the sample. The film thickness measurer measures a thickness of the sample at a first position where the laser beam irradiates the sample. The controller controls at least one irradiation condition of the laser beam based on the measured thickness of the sample.

An organic light-emitting diode (OLED) deposition system has a workpiece transport system configured to position a workpiece within the OLED deposition system under vacuum conditions, a deposition chamber configured to deposit a first layer of organic material onto the workpiece, a metrology system having one or more sensors measure of the workpiece after deposition in the deposition chamber, and a control system to control a deposition of the layer of organic material onto the workpiece. The metrology system includes a digital holographic microscope positioned to receive light from the workpiece and generate a thickness profile measurement of a layer on the workpiece. The control system is configured to adjust processing of a subsequent workpiece at the deposition chamber or adjust processing of the workpiece at a subsequent deposition chamber based on the thickness profile.

A method of determining information indicative of a material attribute of a composition, wherein the method comprises manufacturing the composition using a thermal manufacturing process, detecting detection data from the composition by low coherence interferometry during the manufacturing, in particular during said thermal manufacturing process, and determining the information based on the detected detection data.

Systems and methods for predicting an immune response against a tumor in a patient having the tumor are provided. The relative mass or changes of mass of tumor cells or immune cell in the tumor can be ex vivo observed, and an immune status of the tumor can be determined based on the mass of tumor cells or immune cell. The immune status can provide a guidance to predict the immune response against the tumor in the patient.