A thickness measuring device includes a laser emitting a laser beam to an object in a semiconductor processing chamber, a quartz glass inside the chamber reflecting part of the laser beam and to transmit a remainder of the laser beam, a first light receiving sensor detecting an intensity of first reflected light reflected from the quartz glass, a second light receiving sensor detecting an intensity of second reflected light transmitted through the quartz glass and reflected from the object, and a controller configured to calculate input intensity of the laser beam based on the intensity of the first reflected light, to calculate reflectivity of the object by comparing the input intensity of the laser beam with the intensity of the second reflected light, and to measure a thickness of the object by comparing the calculated reflectivity with predetermined reflectivity values for a plurality of thicknesses.

An example method that includes receiving, by a computing device, a geometry of the component that includes a plurality of locations on a surface of the component; determining, by the computing device, a respective target thickness of the coating for each respective location of the plurality of locations based on a target coated component geometry and the geometry of the component; and determining, by the computing device, a number of passes or velocity of a coating device for each respective position of a plurality of positions to achieve the respective target thickness for each respective location.

An example method that includes receiving a first geometry of a component in an uncoated state and a second geometry of the component in a coated state; determining a first difference between the second geometry and a first simulated geometry based on the first geometry and a first spray law comprising a plurality of first spray law parameters; iteratively adjusting at least one first spray law parameter to determine a respective subsequent spray law; iteratively determining a respective subsequent difference between the second geometry and a subsequent simulated geometry based on the first geometry and the subsequent respective spray law; selecting a subsequent spray law from the respective subsequent spray laws based on the respective subsequent differences; and controlling a coating process based on the selected subsequent spray law.

An example method that includes receiving a geometry of a component that includes a plurality of locations on a surface of the component; determining a first target trajectory including a first plurality of target trajectory points and a second target trajectory including a second plurality of target trajectory points, the first and second trajectories offset in a first direction, and the first and second plurality of trajectory points offset in a second direction; determining a respective target coating thickness of the coating based on a target coated component geometry and the geometry; and determining a respective motion vector of a coating device based on the first and second target trajectories to deposit the respective target coating thickness.

An example method that includes receiving a geometry of an uncoated component and a measured coating thickness of a coated test; determining a simulated coating thickness based on the geometry and a first spray law including a plurality of first spray law parameters; determining a difference between the simulated coating thicknesses and the measured coating thickness; iteratively adjusting at least one first spray law parameter to determine a respective subsequent spray law and determining a respective subsequent difference between the measured coating thickness and a subsequent simulated coating thickness based on the geometry and the respective subsequent spray law; selecting a subsequent spray law from the plurality of respective subsequent spray laws based on the respective subsequent differences; and controlling a coating process based on the selected subsequent spray law to compensate for the difference.

A method of producing a coating. The method includes determining a surface defect region of a coating on a substrate and a location of the surface defect. The method further includes selectively and locally correcting the surface defect by applying a corrective coating region to the surface defect region based on the location of the surface defect via spatial atomic layer deposition (SALD) using an SALD reactor.

A coating system may include a coating chamber; a substrate holder to move a substrate along a motion path; and a sensor device in the coating chamber, wherein the sensor device is configured to move along the motion path, and wherein the sensor device is to perform a spectral measurement on the substrate.

A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

According to one embodiment, an analysis apparatus includes a stage on which to place a sample, a light source, a film thickness measurement unit, and a controller. The light source generates a laser beam to irradiate the sample with the laser beam to cause vaporization of the sample. The film thickness measurer measures a thickness of the sample at a first position where the laser beam irradiates the sample. The controller controls at least one irradiation condition of the laser beam based on the measured thickness of the sample.

A system and method of use for simplifying the measurement of various properties of complex semiconductor structures is provided. The system and method supports reduction of structure complexity and modeling for optical monitoring and permits determination of film thicknesses and feature depths during semiconductor manufacturing processes.