A height detection apparatus successively changes the brightness of white light from a first level to a second level in accordance with a position of a Z stage and captures an image of interference light while moving a two-beam interference objective lens relative to a paste film in an optical axis direction, detects, as a focus position, a position of the Z stage where the intensity of interference light is highest in a period during which the brightness of white light is set to the first or second level, for each pixel of the captured image, and obtains the height of the paste film based on a detection result.

A method of measuring a film thickness is provided. A first semiconductor layer and a second semiconductor layer may be mainly constituted of a same material and may be of a same conductivity type. A film thickness measuring device may be configured such that light emitted from a light source is reflected by a semiconductor substrate fixed to a stage after having been reflected by a half mirror, and the light reflected by the semiconductor substrate passes through the half mirror and enters a photodetector. The light reflected by the semiconductor substrate may include first reflected light reflected by a surface of the second semiconductor layer and second reflected light reflected by an interface between the second semiconductor layer and the first semiconductor layer. A film thickness calculator may calculate the film thickness of the second semiconductor layer based on the light detected by the photodetector.

A thickness measuring apparatus for measuring the thickness of a workpiece held on a chuck table includes the followings: a light source configured to emit white light; an optical branching unit configured to branch, to a second optical path, reflected light applied from the light source to the workpiece held on the chuck table via a first optical path and reflected from the workpiece; a diffraction grating disposed in the second optical path; an image sensor configured to detect an optical intensity signal of light separated into each wavelength by the diffraction grating; and a thickness output unit configured to generate a spectral interference waveform on the basis of the optical intensity signal detected by the image sensor, determine the thickness on the basis of the spectral interference waveform, and output the thickness.

A growth rate detection apparatus has a reflectometer to measure reflectivity of a thin film by receiving reflected light of light irradiated with the thin film, a growth rate candidate calculator to calculate a first growth rate and a second growth rate which are candidates for a growth rate of the thin film based on a temporal variation period of the reflectivity and a refractive index of the thin film in a case where the reflectometer irradiates the thin film with light of a first wavelength and to calculate a third growth rate and a fourth growth rate which are candidates for the growth rate of the thin film based on the temporal variation period and the refractive index in a case where the reflectometer irradiates the thin film with light of a second wavelength, and a growth rate selector to select a common growth rate.

Systems and methods are disclosed for improving optical spectrum fidelity of an integrated computational element fabricated on a substrate. The integrated computational element is configured, upon completion, to process an optical spectrum representing a chemical constituent of a production fluid from a wellbore. The systems and methods measure in situ a thickness, a complex index of refraction, or both of a film formed during fabrication to generate a predicted optical spectrum. The predicted optical spectrum is compared to a target optical spectrum. Revisions to a design of the integrated computational element are conducted in situ to improve optical spectrum fidelity relative to the target optical spectrum. Other systems and methods are presented.

Optical grating components and methods of forming are provided. In some embodiments, a method includes providing an optical grating layer, and forming an optical grating in the optical grating layer, wherein the optical grating comprises a plurality of angled trenches disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the optical grating layer. The method may further include delivering light from a light source into the optical grating layer, and measuring at least one of: an undiffracted portion of the light exiting the optical grating layer, and a diffracted portion of the light exiting the optical grating layer.

Implementations of the present disclosure generally relate to methods for cleaning processing chambers. More specifically, implementations described herein relate to methods for determining processing chamber cleaning endpoints. In some implementations, a virtual sensor for detecting a cleaning endpoint is provided. The virtual sensor is based on monitoring trends of chamber foreline pressure during cleaning of the chamber, which involves converting solid deposited films on the chamber parts into gaseous byproducts by reaction with etchants like fluorine plasma for example. Validity of the virtual sensor has been confirmed by comparing the virtual sensor response with infrared-based optical measurements. In another implementation, methods of accounting for foreline pressure differences due to facility design and foreline clogging over time.

The disclosure relates to a method of determining a velocity profile for the movement of a substrate to be coated relative to a coating source.

Multiple theoretical reflectances determined by simulation for a silicon substrate with thin films of multiple types and thicknesses formed thereon are registered in association with the types and the thicknesses in a database. A carrier storing semiconductor wafers in a lot is transported into a heat treatment apparatus. A reflectance of a semiconductor wafer is measured by applying light to a surface of the semiconductor wafer. The theoretical reflectance of the semiconductor wafer is calculated from the measured reflectance thereof. A theoretical reflectance closely resembling the theoretical reflectance of the semiconductor wafer is extracted from among the multiple theoretical reflectances registered in the database, whereby the type and thickness of the thin film formed on the surface of the semiconductor wafer are specified. Treatment conditions for the semiconductor wafer are determined based on the specified type and thickness of the thin film.

A signal waveform of an estimation signal and a signal waveform of the reflected light intensity signal are coordinated with each other such that a time point when a film thickness is equal to zero in the signal waveform of the estimation signal and a base point in the signal waveform of the reflected light intensity signal coincide with each other. A film thickness corresponding to that estimated value of a signal intensity of a reflected light which corresponds to a film thickness range corresponding to a time range in the signal waveform of the estimation signal and coincides with the signal intensity of the reflected light at a desired time point is set as a film thickness of a thin film at the desired time point.