A method for predetermining a thickness of a coating which is to be arranged on a substrate is provided. A spray spot is arranged on a surface of the substrate or a test substrate. The volume of the spray spot is determined, and based on the determined volume, the thickness of a layer which is to be applied is worked out. An arrangement for predetermining the thickness of a coating is further provided.

A method of analyzing layer thickness of a multilayer component is provided. The method includes: creating an opening having a predefined geometry partially into the multilayer component at a selected location on a surface of the multilayer component. The multilayer component includes a plurality of material layers including a substrate and a bond coat. The opening exposes each of the plurality of material layers including the substrate. Contrast of the exposed plurality of material layers can be increased. An image is created of the exposed layers in the opening using a digital microscope, and thickness of a bond coat, thickness of a depletion layer\ and/or thickness of an oxide layer is calculated from the image and based on the predefined geometry of the opening. Repairing the opening, allows the multilayer component to be used for an intended purpose after testing, e.g., re-installed and reused in a gas turbine.

A system for analyzing layer thickness of a multilayer component is provided. The system includes: an opening forming device configured to create an opening having a predefined geometry partially into the multilayer component at a selected location on a surface of the multilayer component, where the multilayer component includes a plurality of material layers including a substrate and a bond coat and the opening exposes each of the plurality of material layers, and an imaging device configured to create an image of the exposed plurality of material layers in the opening. The system is configured to calculate at least a thickness of the bond coat of the exposed plurality of material layers from the image and based on the predefined geometry of the opening. The system may also include a repairing device configured to repair the opening, allowing the multilayer component to be used for an intended purpose.

A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

A system includes a memory and at least one processing device operatively coupled to the memory to facilitate an etch recipe development process by performing a number of operations. The operations include receiving a request to initiate an iteration of an etch process using an etch recipe to etch a plurality of materials each located at a respective one of a plurality of reflectometry measurement points, obtaining material thickness data for each of the plurality of materials resulting from the iteration of the etch process, and determining one or more etch parameters based on the material thickness data.

A device for determining a layer thickness in a multilayer film includes a radiation source configured to generate an electromagnetic primary radiation, a detector configured to detect an electromagnetic secondary radiation emitted by the multilayer film, the secondary radiation being induced by an interaction of the primary radiation with the multilayer film, and a first contact block transparent to the electromagnetic primary radiation and having a first contact surface for creating contact with the multilayer film. The radiation source is arranged on the first contact block in such a way that the electromagnetic primary radiation is guided from the first contact block onto the multilayer film.

A semiconductor substrate measuring apparatus includes a light source to generate irradiation light having a sequence of on/off at a predetermined interval, the light source to provide the irradiation light to a chamber with an internal space for processing a semiconductor substrate using plasma, an optical device between the light source and the chamber, the optical device to split a first measurement light into a first optical path, condensed while the light source is turned on, to split a second measurement light into a second optical path, condensed while the light source is turned off, and to synchronize with the on/off sequence, and a photodetector connected to the first and second optical paths, the photodetector to subtract spectra of first and second measurement lights to detect spectrum of reflected light, and to detect plasma emission light emitted from the plasma based on the spectrum of the second measurement light.

According to one embodiment, an analysis apparatus includes a stage on which to place a sample, a light source, a film thickness measurement unit, and a controller. The light source generates a laser beam to irradiate the sample with the laser beam to cause vaporization of the sample. The film thickness measurer measures a thickness of the sample at a first position where the laser beam irradiates the sample. The controller controls at least one irradiation condition of the laser beam based on the measured thickness of the sample.

A substrate inspection system is provided to monitor characteristics of a substrate, while the substrate is disposed within (or being transferred into/out of) a processing unit of a liquid dispense substrate processing system. The inspection system is integrated within a liquid dispense substrate processing system and includes one or more optical sensors of a reflectometer (such as a spectrometer or laser-based transceiver) configured to obtain spectral data from a substrate. A controller is coupled to receive the spectral data from the optical sensors(s). The one or more optical sensors (or one or more optical fibers coupled to the rest of the optical sensor hardware) are coupled at locations within the substrate processing system. The controller analyzes the spectral data received from the optical sensors(s) to detect characteristic(s) of the substrate including, but not limited to, film thickness (FT), refractive index changes, and associated critical dimension (CD) changes.

Methods, apparatus, and systems are provided herein for processing a substrate. Generally, the processing involves Spacer-on-Spacer (SoS) Self-Aligned Quadruple Patterning (SAQP) techniques. The disclosed techniques provide a novel process flow that reduces defects by ensuring that cores are not removed from the substrate until the substrate is transferred to a deposition chamber used to deposit a second spacer layer. This reduces or eliminates the risk of structural damage to features on the substrate while the substrate is being transferred or cleaned. Such structural damage is common when the cores are removed from the substrate prior to cleaning and transfer.