A polishing apparatus and a polishing method capable of accurately measuring a film thickness of a workpiece, such as wafer, substrate, or panel, used in manufacturing of semiconductor devices during polishing of the workpiece are disclosed. The processing system is configured to determine a film thickness of the workpiece based on relative reflectance data calculated by a calculation formula expressed as: the relative reflectance data=MD1/[BD1.Math.k], where MD1 represents first intensity measurement data indicating intensity of the reflected light from the workpiece measured by the first spectrometer, BD1 represents the first base intensity data, and k represents a rate of change in second intensity measurement data with respect to the second base intensity data. The second intensity measurement data is indicative of intensity of the light of the light source measured by the second spectrometer during polishing of the workpiece.

A substrate processing apparatus includes a chamber including an accommodation space, a stage disposed in the accommodation space and provided with a substrate disposed thereon, a deposition part disposed under the stage and spraying at least one deposition material to the substrate, and a measurement part disposed adjacent to the deposition part. The measurement part includes an accommodation portion provided with an opening defined through at least one surface thereof, a light source disposed in the accommodation portion and irradiating a first light, at least one transmission portion disposed in the opening, facing the light source, and receiving the first light, and a reception portion facing the at least one transmission portion and receiving the first light reflected from the at least one deposition material as a second light.

A system includes a local device and a remote computing system. The local device is disposed in a toilet paper dispenser and includes a sensor and a first processor. The sensor is configured to measure a distance to a toilet paper roll. The first processor is configured to calculate, using the measured distance to the toilet paper roll, a percentage of toilet paper remaining on the toilet paper roll. The first processor is further configured to transmit, when it is determined that the percentage of toilet paper remaining is less than a minimum threshold, sensor data across a wireless communications network. The remote computing system includes a second processor configured to receive the sensor data and send an alert for display on a user device in response to receiving the sensor data.

A method of producing a model capable of reducing an influence of spectral variation of reflected light from a workpiece, such as a wafer, and capable of determining an accurate film thickness is disclosed. The method includes: determining sample features representing features of sample spectra of reflected lights from a sample having a film; obtaining similarities by calculating a similarity between each of the sample spectra and a representative spectrum; and producing a film-thickness estimation model by performing machine leaning using training data including the sample features, the similarities, and film thicknesses corresponding to the sample spectra.

A system is provided for in-situ ion beam etch rate or deposition rate measurement, including: a vacuum chamber; an ion beam source configured to direct an ion beam onto a first surface of a sample located within the vacuum chamber and to etch the first surface of the sample with an etch rate; or a material source configured to deposit material onto a first surface of a sample located within the vacuum chamber with a deposition rate; and an interferometric measurement device located at least partially within the vacuum chamber and configured to direct light onto a second surface of the sample and to determine the etch rate of the ion beam or the deposition rate of the deposited material in-situ based on light reflected from the sample.

A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

A method for measuring the thickness of coatings on a substrate of an aerospace component comprises illuminating a sample comprising the substrate of the aerospace component and a coating with light waves of varying wavelengths from a light source, receiving the light waves reflected by the sample at a light collector, diffracting the light waves into a plurality of component wavelengths with a grating, detecting the light intensities of the plurality of component wavelengths at a detector array, generating a reflectance spectral curve using the detected light intensities for each of the plurality of component wavelengths, calculating the thickness of the coating from the reflectance spectral curves of the component wavelengths.

An endpoint detection system for use in detecting an endpoint of a refurbishment process for process chamber components. The refurbishment process involves use of an etchant bath to etch or clean chamber components after their use a reaction chamber in semiconductor processing to remove deposited materials including oxide films or the like. The endpoint detection system is configured to use measurements of reflected electromagnetic radiation from surfaces of the component in an etchant bath, transmitted electromagnetic radiation passing through holes in the chamber component while the component is in the etchant bath, or both to detect process endpoints. The process endpoints can coincide with a desired amount of removal of the deposited materials from surfaces and/or through holes in the chamber component. Upon detection of the endpoints, the chamber component can be removed from the etchant to limit over etching of materials from the chamber component to increase useful life.

A system includes a memory, and at least one processing device, operatively coupled to the memory, to facilitate an etch recipe development process by performing operations including obtaining, from an optical detector, first material thickness data for a first material and second material thickness data for a second material resulting from an iteration of an etch process using an etch recipe. The first material is located at a first reflectometry measurement point and the second material is located at a second reflectometry measurement point different from the first reflectometry measurement point. The operations further include determining one or more etch parameters based on at least the first material thickness data and the second material thickness data.

An etching method of etching apparatus is disclosed. The etching apparatus performs an etching process on a material to be processed which includes a material layer and a mask layer formed on the material layer. The etching method includes the following steps. The mask layer is etched. A light intensity at a specific wavelength for light generated is detected when the etching process is performed on the mask layer to be processed and an end point detection signal is generated. An etching completion time of the mask layer to be etched is determined according to the end point detection signal. A thickness of the mask layer to be etched is calculated according to the etching completion time. An etching time of the material layer is adjusted according to the thickness of the mask layer to be etched. The material layer is etched after adjusting the etching time.