A system includes a memory and at least one processing device operatively coupled to the memory to facilitate an etch recipe development process by performing a number of operations. The operations include receiving a request to initiate an iteration of an etch process using an etch recipe to etch a plurality of materials each located at a respective one of a plurality of reflectometry measurement points, obtaining material thickness data for each of the plurality of materials resulting from the iteration of the etch process, and determining one or more etch parameters based on the material thickness data.

According to aspects of the embodiments, there is provided a method of measuring the amount of fountain solution employed in a digital offset lithography printing system. Fountain solution thickness is measured by using phase shifted monochromic light to produce optical path differences through the fountain solution film. The intensity of the reflected light through the fountain solution film is very sensitive due to the phase shifted light so interference fringes are easier to delineate and fountain solution thickness measurement more reliable.

A method is disclosed for operating an endpoint detection system of a processing chamber having a ceiling formed therein, a substrate support located internal to the processing chamber, and a substrate resting on the substrate support. A transparent panel is located in the ceiling of the processing chamber, the panel oriented at a first acute angle relative to the substrate and the substrate support. The transparent panel receives an incident light beam from the endpoint detection system at a second acute angle relative to the panel. The transparent panel transmits the incident light beam to the substrate within the processing chamber at an angle perpendicular to the substrate and the substrate support.

A method of in situ monitoring a thin film deposition process on a substrate, the method including a) defining a desired spectrum, the desired spectrum being a transmission or a reflection spectrum; b1) illuminating the substrate by means of a light source emitting light within the desired spectrum, b2) receiving light reflected from the substrate or transmitted through the substrate, b3) determining a transmission or a reflection spectrum out of the received light; c) defining a spectrum or a combination of spectra in dependency of the spectrum determined in step b3) to be a current spectrum; d) determining a weight spectrum as a function of the current spectrum; e) calculating a real number as a function of the current spectrum, of the desired spectrum and of the weight spectrum; f) exploiting the real number as indication for a deviation of the current spectrum from the desired spectrum.

An example method that includes receiving, by a computing device, a geometry of the component that includes a plurality of locations on a surface of the component; determining, by the computing device, a respective target thickness of the coating for each respective location of the plurality of locations based on a target coated component geometry and the geometry of the component; and determining, by the computing device, a number of passes or velocity of a coating device for each respective position of a plurality of positions to achieve the respective target thickness for each respective location.

An example method that includes receiving a first geometry of a component in an uncoated state and a second geometry of the component in a coated state; determining a first difference between the second geometry and a first simulated geometry based on the first geometry and a first spray law comprising a plurality of first spray law parameters; iteratively adjusting at least one first spray law parameter to determine a respective subsequent spray law; iteratively determining a respective subsequent difference between the second geometry and a subsequent simulated geometry based on the first geometry and the subsequent respective spray law; selecting a subsequent spray law from the respective subsequent spray laws based on the respective subsequent differences; and controlling a coating process based on the selected subsequent spray law.

An example method that includes receiving a geometry of a component that includes a plurality of locations on a surface of the component; determining a first target trajectory including a first plurality of target trajectory points and a second target trajectory including a second plurality of target trajectory points, the first and second trajectories offset in a first direction, and the first and second plurality of trajectory points offset in a second direction; determining a respective target coating thickness of the coating based on a target coated component geometry and the geometry; and determining a respective motion vector of a coating device based on the first and second target trajectories to deposit the respective target coating thickness.

An example method that includes receiving a geometry of an uncoated component and a measured coating thickness of a coated test; determining a simulated coating thickness based on the geometry and a first spray law including a plurality of first spray law parameters; determining a difference between the simulated coating thicknesses and the measured coating thickness; iteratively adjusting at least one first spray law parameter to determine a respective subsequent spray law and determining a respective subsequent difference between the measured coating thickness and a subsequent simulated coating thickness based on the geometry and the respective subsequent spray law; selecting a subsequent spray law from the plurality of respective subsequent spray laws based on the respective subsequent differences; and controlling a coating process based on the selected subsequent spray law to compensate for the difference.

An etching apparatus and an etching method thereof are provided. An end point detector detects a light intensity at a specific wavelength for light generated when an etching process is performed on a material to be processed, and generates an end point detection signal. The material to be processed includes a material layer and at least one mask layer formed on the material layer. A control device determines an etching completion time of the mask layer according to the end point detection signal, calculates a thickness of the mask layer according to the etching completion time, and adjusts an etching time of the material layer according to the thickness of the mask layer.

An etching apparatus and an etching method thereof are provided. An end point detector detects a light intensity at a specific wavelength for light generated when an etching process is performed on a material to be processed, and generates an end point detection signal. The material to be processed includes a material layer and at least one mask layer formed on the material layer. A control device determines an etching completion time of the mask layer according to the end point detection signal, calculates a thickness of the mask layer according to the etching completion time, and adjusts an etching time of the material layer according to the thickness of the mask layer.